Modelling of ionization effects and the effects of displacement in digital chips for CAD
Keyword(s):
X Ray
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The methods of design of digital fault-tolerant bipolar integrated circuits to exposure to radiations such as gamma, x-ray and neutron radiation are considered, as well as the impact of the neutron pulse, which af-fect largely on the gain of the transistor. The operating mode of integrated circuits with change in the ini-tial values of voltages, as well as currents of the emitter and of the base is presented. Numerical calcula-tions of the ionization current in the base-collector junction are considered which allow pre-calculate dose rate of gamma, x-ray and neutron radiation.