Excitation of magnetostatic surface waves by symmetric coplanar line

2016 ◽  
Author(s):  
Бабичев ◽  
Rudolf Babichev ◽  
Левендорский ◽  
K. Levendorskiy ◽  
Бабичева ◽  
...  
Keyword(s):  
Transmission Line ◽  
Surface Waves ◽  
Insertion Loss ◽  
Film Surface ◽  
Ferrite Film ◽  
Frequency Range ◽  
Coplanar Line ◽  
Narrow Bandwidth

An excitation of magnetostatic surface waves (MSSW) with a symmetric coplanar transmission line was considered for the case, when coplanar line is placed at some distance from the ferrite film surface. The dependence of symmetric coplanar line impedance on the spacing between the line and ferrite film has been studied for the case of magnetostatic surface waves. It has been found that smaller values of this spacing cause increase the frequency range of effective MSSW excitation. Narrow bandwidth insertion loss filters can be achieved by use shorted one screen coplanar transducers.

Band-pass filter based on magnetostatic surface waves, exciting by a one screen coplanar line

2016 ◽  
Author(s):  
Бабичев ◽  
Rudolf Babichev ◽  
Левендорский ◽  
K. Levendorskiy ◽  
Натхин ◽  
...  
Keyword(s):  
Surface Waves ◽  
Filter Design ◽  
Film Surface ◽  
Theoretical Method ◽  
Ferrite Film ◽  
Band Pass Filter ◽  
Experimental Frequency ◽  
Pass Filter ◽  
Coplanar Line ◽  
Band Pass

An excitation of magnetostatic surface waves (MSSW) by a one screen coplanar transmission line was considered for the case, when coplanar line is placed at some distance from the ferrite film surface. The dependence of coplanar line impedance on the spacing between the line and ferrite film has been studied for design of band-pass filter. Approximate theoretical method of band-pass filter design is presented. Experimental frequency responses of band-pass filter which utilize a yttrium-iron-garnet (YIG) films with different thickness are presented and compared. Frequency dependences of a one screen coplanar line radiation resistance and insertion losses of band-pass filter are discussed.

Band-pass filter based on magnetostatic surface waves, exciting by a one screen coplanar line

2016 ◽  
Author(s):  
Бабичев ◽  
Rudolf Babichev ◽  
Левендорский ◽  
K. Levendorskiy ◽  
Натхин ◽  
...  
Keyword(s):  
Surface Waves ◽  
Filter Design ◽  
Film Surface ◽  
Theoretical Method ◽  
Ferrite Film ◽  
Band Pass Filter ◽  
Experimental Frequency ◽  
Pass Filter ◽  
Coplanar Line ◽  
Band Pass

An excitation of magnetostatic surface waves (MSSW) by a one screen coplanar transmission line was considered for the case, when coplanar line is placed at some distance from the ferrite film surface. The dependence of coplanar line impedance on the spacing between the line and ferrite film has been studied for design of band-pass filter. Approximate theoretical method of band-pass filter design is presented. Experimental frequency responses of band-pass filter which utilize a yttrium-iron-garnet (YIG) films with different thickness are presented and compared. Frequency dependences of a one screen coplanar line radiation resistance and insertion losses of band-pass filter are discussed.

Band-pass filter based on magnetostatic surface waves, exciting by symmetric coplanar line

2016 ◽  
Author(s):  
Бабичев ◽  
Rudolf Babichev ◽  
Левендорский ◽  
K. Levendorskiy ◽  
Бабичева ◽  
...  
Keyword(s):  
Surface Waves ◽  
Filter Design ◽  
Film Surface ◽  
Theoretical Method ◽  
Ferrite Film ◽  
Band Pass Filter ◽  
Experimental Frequency ◽  
Pass Filter ◽  
Coplanar Line ◽  
Band Pass

An excitation of magnetostatic surface waves (MSSW) by symmetric coplanar transmission line was considered for the case, when coplanar line is placed at some distance from the ferrite film surface. The dependence of symmetric coplanar line impedance on the spacing between the line and ferrite film has been studied for design of band-pass filter. Approximate theoretical method of band-pass filter design is presented. Experimental frequency responses of band-pass filter which utilize a yttrium-iron-garnet (YIG) films with different thickness are presented and compared. Frequency dependences of symmetric coplanar line radiation resistance and insertion losses of band-pass filter are discussed.

Optimization of Scattering Parameters through Numerical Investigation of One-bit RF MEMS Switch over Ku, K and Ka Band

2020 ◽  
Vol 12 ◽  
Author(s):  
Pampa Debnath ◽  
Ujjwal Mondal ◽  
Arpan Deyasi
Keyword(s):  
Transmission Line ◽  
Numerical Investigation ◽  
Line Width ◽  
Insertion Loss ◽  
Return Loss ◽  
Rf Mems ◽  
Rf Mems Switch ◽  
Ka Band ◽  
Mems Switch ◽  
Overlap Area

Aim:: Computation of loss factors for one-bit RF MEMS switch over Ku, K and Ka-band for two different insulating substrates. Objective:: Numerical investigation of return loss, insertion loss, isolation loss are computed under both actuated and unactuated states for two different insulating substrates of the 1-bit RF MEMS switch, and corresponding up and down-capacitances are obtained. Methods:: The unique characteristics of a 1-bit RF MEMS switch of providing higher return loss under both actuated and unactuated states and also of isolation loss with negligible insertion loss makes it as a prime candidate for phase shifter application. This is presented in this manuscript with a keen focus on improvement capability by changing transmission line width, and also of overlap area; where dielectric constant of the substrate also plays a vital role. Results:: The present work exhibits very low down-capacitance over the spectrum whereas considerable amount of up-capacitance. Also when overall performance in terms of all loss parameters are considered, switch provides very low insertion loss, good return loss under actuated state and standard isolation loss. Conclusion:: Reduction of transmission line width of about 33% improved the performance of the switch by increasing isolation loss. Isolation loss of -40 dB is obtained at actuated condition in higher microwave spectra for SiO 2 at higher overlap area. Down capacitance of ~ 1dB is obtained which is novel as compared with other published literature. Moreover, a better combination of both return loss, isolation loss and insertion loss are reported in this present work compared with all other published data so far.

60 GHz-Band Low-Noise Amplifier

2017 ◽  
Vol 26 (05) ◽  
pp. 1750075 ◽  
Author(s):  
Najam Muhammad Amin ◽  
Lianfeng Shen ◽  
Zhi-Gong Wang ◽  
Muhammad Ovais Akhter ◽  
Muhammad Tariq Afridi
Keyword(s):  
Transmission Line ◽  
Quality Factor ◽  
Noise Figure ◽  
Cmos Technology ◽  
Low Noise ◽  
Constant Current ◽  
60 Ghz ◽  
Frequency Range ◽  
Constant Current Density ◽  
Chip Area

This paper presents the design of a 60[Formula: see text]GHz-band LNA intended for the 63.72–65.88[Formula: see text]GHz frequency range (channel-4 of the 60[Formula: see text]GHz band). The LNA is designed in a 65-nm CMOS technology and the design methodology is based on a constant-current-density biasing scheme. Prior to designing the LNA, a detailed investigation into the transistor and passives performances at millimeter-wave (MMW) frequencies is carried out. It is shown that biasing the transistors for an optimum noise figure performance does not degrade their power gain significantly. Furthermore, three potential inductive transmission line candidates, based on coplanar waveguide (CPW) and microstrip line (MSL) structures, have been considered to realize the MMW interconnects. Electromagnetic (EM) simulations have been performed to design and compare the performances of these inductive lines. It is shown that the inductive quality factor of a CPW-based inductive transmission line ([Formula: see text] is more than 3.4 times higher than its MSL counterpart @ 65[Formula: see text]GHz. A CPW structure, with an optimized ground-equalizing metal strip density to achieve the highest inductive quality factor, is therefore a preferred choice for the design of MMW interconnects, compared to an MSL. The LNA achieves a measured forward gain of [Formula: see text][Formula: see text]dB with good input and output impedance matching of better than [Formula: see text][Formula: see text]dB in the desired frequency range. Covering a chip area of 1256[Formula: see text][Formula: see text]m[Formula: see text]m including the pads, the LNA dissipates a power of only 16.2[Formula: see text]mW.

E-band cavity diplexer based on micromachined technology

2015 ◽  
Vol 8 (2) ◽  
pp. 179-184 ◽  
Author(s):  
Valeria Nocella ◽  
Luca Pelliccia ◽  
Paola Farinelli ◽  
Roberto Sorrentino ◽  
Mario Costa ◽  
...  
Keyword(s):  
Insertion Loss ◽  
Radio Link ◽  
Next Generation ◽  
Frequency Range ◽  
Coupled Cavities ◽  
Future Production ◽  
Band Pass ◽  
Manufacturing Tolerances ◽  
Manufacturing Yield ◽  
Better Than

A robust and tuneless micromachined waveguide diplexer operating in the frequency range 71–86 GHz is here presented. The diplexer is based on multiple coupled cavities and it is manufactured using micromachining technology on two staked silicon layers. The diplexer consists of two filters combined to a common waveguide port via an E-plane T-junction. The two eight-order band-pass filters are centered at 73.5 and 83.5 GHz. The fractional bandwidths for two bands are 8.8 and 7.8% at higher- and lower-band, respectively. The measured insertion loss is below 0.7 dB for both the filters and the diplexer isolation is better than 55 dB, as required. The proposed technology allows for a very compact device (<20 × 20 × 1.5 mm) and the first prototypes were proved to be very robust to manufacturing tolerances and environmental tests, thus leading to an excellent tuneless manufacturing yield in future production. The diplexer will be employed in next generation terrestrial radio-link communications front-ends.

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