scholarly journals Formation of wear resistant coatings on aluminum alloys by chromium deposition from gas-phase organometallic compounds

2016 ◽  
Vol 1 (2) ◽  
pp. 34-38 ◽  
Author(s):  
В Александров ◽  
V Aleksandrov ◽  
М. Морщилов ◽  
M. Morshchilov
Keyword(s):  
Wear Resistance ◽  
Substrate Temperature ◽  
Gas Phase ◽  
Chemical Vapor ◽  
High Hardness ◽  
Organometallic Compounds ◽  
Deposition Process ◽  
Amorphous Structure ◽  
Decomposition Temperature ◽  
Evaporator Temperature

The method of coatings producing by chemical vapor deposition from gas phase by pyrolysis of organometallic com-pounds of chromium on the aluminum alloy AL9 is described. For the research the “Barhos” liquid with bis-arene chromium organic compounds, containing bis-ethylbenzene chromium (322 ºC boiling point, decomposition temperature of the metal is 330 ºC), was selected. The chromium content in the liquid is not less than 16%.The deposition process depends on the gas-phase chromium: substrate temperature, reactor pressure, evaporator temperature, process duration. The deposition temperature (substrate temperature) is one of the major factors in the formation of coatings. It is determined, that the pyrolytic chromium coatings are characterized by high hardness (up to 16000 MPa) and wear resistance due to the amorphous structure, which allows them to improve the wear resistance of rubbing parts.

Theoretical Study of Gas-Phase Thermodynamics Relevant to Silicon Carbide Chemical Vapor Deiposition

1991 ◽  
Vol 250 ◽  
Author(s):  
Mark D. Allendorf ◽  
Carl F. Melius
Keyword(s):  
Silicon Carbide ◽  
Gas Phase ◽  
Theoretical Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Equilibrium Calculations

AbstractEquilibrium calculations are reported for conditions typical of silicon carbide (SiC) deposition from mixtures of silane and hydrocarbons. Included are 34 molecules containing both silicon and carbon, allowing an assessment to be made of the importance of organosilicon species (and organosilicon radicals in particular) to the deposition process. The results are used to suggest strategies for improved operation of SiC CVD processes.

An Investigation of Methods to Improve the Wear Resistance of Gas-Bearing Ceramic Materials

1968 ◽  
Vol 90 (4) ◽  
pp. 829-838
Author(s):  
H. H. Rowe
Keyword(s):  
Wear Resistance ◽  
Chemical Vapor ◽  
High Hardness ◽  
Ceramic Materials ◽  
Gold Plating ◽  
Good Surface ◽  
Irradiation Treatment ◽  
Vapor Deposition Technique ◽  
Good Surface Finish ◽  
Gas Bearing

Ceramic materials, or more particularly aluminum oxides, have found application as a practical gas-bearing material because of the dimensional stability, low coefficient of friction, high hardness, and ability to attain good surface finish that these materials possess. This paper reports on an investigation of a number of methods designed to improve the resistance of aluminum oxide to damage from sliding contact, and hence improve the start-stop life characteristics of gas-bearing assemblies. These methods include heat-treatment, neutron irradiation treatment, gold plating, and coating of alumina surfaces by means of a chemical vapor deposition technique, in order to increase the wear resistance of the material. A brief mention is also made of the effect of machining techniques as they relate to the finish, and hence to the wear resistance, of gas-bearing parts.

Progress on Preferential Etching and Phosphorus Doping of Single Crystal Diamond

2014 ◽  
Vol 1634 ◽  
Author(s):  
Timothy A. Grotjohn ◽  
Dzung T. Tran ◽  
M. Kagan Yaran ◽  
Thomas Schuelke
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Microwave Plasma ◽  
Hydrogen Plasma ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Growth Conditions ◽  
Room Temperature Resistivity ◽  
Single Crystal Diamond

ABSTRACTPhosphorus is incorporated into single crystal diamond during epitaxial growth at higher concentrations on the (111) crystallographic surface than on the (001) crystallographic surface. To form n+-type regions in diamond for semiconductor devices it is beneficial to deposit on the (111) surface. However, diamond deposition is faster and of higher quality on the (001) surface. A preferential etch method is described that forms inverted pyramids on the (001) surface of a substrate diamond crystal, which opens (111) faces for improved phosphorus incorporation. The preferential etching occurs on the surface in regions where a nickel film is deposited. The etching is performed in a microwave generated hydrogen plasma operating at 160 Torr with the substrate temperature in the range of 800-950 °C. The epitaxial growth of diamond with high phosphorus concentrations exceeding 1020 cm-3 is performed using a microwave plasma-assisted chemical vapor deposition process. Successful growth conditions were achieved with a feedgas mixture of 0.25% methane, 500 ppm phosphine and hydrogen at a pressure of 160 Torr and a substrate temperature of 950-1000°C. The room temperature resistivity of the phosphorus-doped diamond is 120-150 Ω-cm and the activation energy is 0.027 eV.

Theoretical Studies of Gravitational Effects in Chemical Vapor Deposition

1986 ◽  
Vol 87 ◽  
Author(s):  
Charter D. Stinespring ◽  
Charles E. Kolb ◽  
Kurt D. Annen
Keyword(s):  
Chemical Vapor Deposition ◽  
Mass Transport ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Fluid Properties ◽  
Convective Fluid ◽  
Phase Chemistry

AbstractChemical Vapor Deposition (CVD) processes are generally carried out under large temperature gradients. These gradients, temperature dependent fluid properties, and the earth's gravitational field give rise to buoyancy-driven free convective fluid flow which augments heat and mass transport in the CVD reactor. Under certain conditions, this free convective flow may alter the gas phase chemistry associated with the deposition process. In order to understand these free convective effects and their implications for the deposition process, a computational model describing the combined effects of fluid mechanics and chemistry has been developed. This model uses a coupled chemical equilibrium/mass transport code in conjunction with a 2-D elliptic fluid dynamics code to describe gas phase species profiles and deposition rates. This paper briefly describes the development of the model, its use, and the results of typical calculations.

Controllable Chemical Vapor Deposition Synthesis of Carbon Layers on Copper Substrate

2016 ◽  
Vol 721 ◽  
pp. 263-266
Author(s):  
Mariya Kozlova ◽  
Tatiana Larionova ◽  
Tatiana Koltsova ◽  
Daria Kopylova ◽  
Oleg Tolochko
Keyword(s):  
Electrical Resistivity ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Total Pressure ◽  
Copper Substrate ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Carbon Films ◽  
Controllable Synthesis ◽  
Technological Parameters

The paper studies the effect of technological parameters of the deposition process from the gas phase to the thickness of the carbon layers and their functional characteristics. Graphene and graphite layers have been synthesized by varying total pressure, methane partial pressure and temperature of synthesis. The synthesized films demonstrate an absorption in the range from 4.4% to 99.5% and electrical resistivity varying from 0.14 to 2 kΩ/sq. The obtained results make possible controllable synthesis of carbon films with specified characteristics for use as a photodetectors.

Computational Study of Reactive Flow in Halide Chemical Vapor Deposition of Silicon Carbide Epitaxial Film

2008 ◽  
Author(s):  
Rong Wang ◽  
Ronghui Ma
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Deposition Rate ◽  
Vapor Deposition ◽  
Computational Study ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Large Temperature ◽  
Processing Conditions ◽  
Wide Range

In this study, a comprehensive transport model is developed for Halide Chemical Vapor Deposition (HCVD) system which includes gas dynamics, heat and mass transfer, gas-phase and surface chemistry, and radio-frequency induction heating. This model addresses transport of multiple chemical species in high temperature environment with large temperature difference and complex chemical reactions in gas-phase and on the deposition surface. Numerical modeling of the deposition process in a horizontal hot-wall reactor using SiCl4/C3H8/H2 as precursors has been performed over a wide range of operational parameters to quantify the effects of processing parameters on the film growth. The simulations of the deposition process provide detailed information on the gas-phase composition as well as the distributions of gas velocity and temperature in the reactor. The deposition rate on the substrate surface is also predicted. The results illustrate that deposition temperature and the flow rate of carrier gas play an important role in determining the processing conditions and deposition rate. A high concentration of HCl exists in the growth chamber and the etching of the SiC films by HCl has significant effect on the deposition rate. The modeling approach can be further used to improve reactor design and optimization of processing conditions.

Studies of SiH2Ci2/H2 Gas Phase Chemistry for Selective Thin Film Growth of Crystalline Silicon, c-Si, Using Remote Plasma Enhanced Chemical Vapor Deposition

1991 ◽  
Vol 220 ◽  
Author(s):  
J. A. Theil ◽  
G. Lucovsky ◽  
S. V. Hattangady ◽  
G. G. Fountain ◽  
R. J. Markunas
Keyword(s):  
Gas Phase ◽  
Film Growth ◽  
Crystalline Silicon ◽  
Chemical Vapor ◽  
Deposition Process ◽  
Film Deposition ◽  
Selective Deposition ◽  
Gas Phase Chemistry ◽  
Phase Chemistry

ABSTRACTConventional high temperature, >800°C, CVD processes, utilizing SiH2Ci2 promote selective deposition of c-Si onto c-Si, but not on SiO2 surfaces. We show that low temperature, 300°C remote PECVD, with rf-excited He plasmas, and SiH2Ci2 and H2 injected downstream, also selectively deposits c-Si on c-Si and not SiO2 surfaces. This preliminary study employs in-situ mass spectrometry, MS, to determine the species responsible for selective deposition process reaction pathways. These MS studies suggest that species responsible for film deposition are Si-containing fragments of the SiH2Ci2 molecule, e.g., SiH2Ci, SiCi2H, etc., while the species responsible for inhibiting deposition on the SiO2 surfaces are by-products of the break-up of the SiH2Ci2 molecule in the gas phase, e.g., H-atoms, HCI and H2Ci+ ions.

scholarly journals Wear-resisting properties of multilayer coated carbide blades under different technological conditions of turning of heat-resistant steel

2018 ◽  
Vol 224 ◽  
pp. 01110 ◽  
Author(s):  
Vyacheslav Pchelkin ◽  
Tatyana Duyun
Keyword(s):  
Wear Resistance ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Resistant Steel ◽  
Heat Resistant Steel ◽  
Corrosion Resistant ◽  
Heat Resistant ◽  
Coated Carbide ◽  
Wear Resistance Coatings

Experimented results of wear-resisting properties of carbide blades with multilayer wear-resistance coatings, obtained by different processes: chemical vapor deposition and spraying by condensation from vapour (gas) phase while turning of corrosion –resistant heat-resistant steel 08Х18Н10Т are presented.

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