Structural Properties of ZnO Thin Films Grown on MgO(110) Substrates by Molecular Beam Epitaxy

2019 ◽  
Vol 09 (05) ◽  
pp. 466-472
Author(s):  
学斌 袁
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam ◽  
Zno Thin Films

scholarly journals Effect of thermal annealing on structural properties of GeSn thin films grown by molecular beam epitaxy

AIP Advances ◽  
2017 ◽  
Vol 7 (10) ◽  
pp. 105020 ◽  
Author(s):  
Z. P. Zhang ◽  
Y. X. Song ◽  
Y. Y. Li ◽  
X. Y. Wu ◽  
Z. Y. S. Zhu ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Thermal Annealing ◽  
Molecular Beam

Structural properties of Bi2Te3 topological insulator thin films grown by molecular beam epitaxy on (111) BaF2 substrates

2016 ◽  
Vol 119 (16) ◽  
pp. 165303 ◽  
Author(s):  
Celso I. Fornari ◽  
Paulo H. O. Rappl ◽  
Sérgio L. Morelhão ◽  
Eduardo Abramof
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Topological Insulator ◽  
Molecular Beam

Structural properties of SrO thin films grown by molecular beam epitaxy on LaAlO3 substrates

2006 ◽  
Vol 89 (26) ◽  
pp. 262903 ◽  
Author(s):  
O. Maksimov ◽  
V. D. Heydemann ◽  
P. Fisher ◽  
M. Skowronski ◽  
P. A. Salvador
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Structural Properties ◽  
Molecular Beam

scholarly journals Origin of Ultraviolet Luminescence from Bulk ZnO Thin Films Grown by Molecular Beam Epitaxy

2011 ◽  
Vol 1 ◽  
pp. 135-139 ◽  
Author(s):  
M. Asghar ◽  
Khalid Mahmood ◽  
Adnan Ali ◽  
M.A. Hasan ◽  
I. Hussain ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Molecular Beam Epitaxy ◽  
Room Temperature ◽  
Molecular Beam ◽  
Energy Dispersive ◽  
Zno Thin Films ◽  
X Ray Diffraction ◽  
X Ray ◽  
Uv Luminescence

Origin of ultraviolet (UV) luminescence from bulk ZnO has been investigated with the help of photoluminescence (PL) measurements. Thin films of ZnO having 52%, 53% and 54% of Zn-contents were prepared by means of molecular beam epitaxy (MBE). We observed a dominant UV line at 3.28 eV and a visible line centered at 2.5 eV in the PL spectrum performed at room temperature. The intensity of UV line has been found to depend upon the Zn percentage in the ZnO layers. Thereby, we correlate the UV line in our samples with the Zn-interstitials-bound exciton (Zni-X) recombination. The results obtained from, x-ray diffraction, the energy dispersive X-ray spectrum (EDAX) and Raman spectroscopy supported the PL results.

Investigation of growth mode in ZnO thin films prepared at different temperature by plasma-molecular beam epitaxy

2005 ◽  
Vol 278 (1-4) ◽  
pp. 305-310 ◽  
Author(s):  
H.W. Liang ◽  
Y.M. Lu ◽  
D.Z. Shen ◽  
J.F. Yan ◽  
B.H. Li ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Growth Mode ◽  
Zno Thin Films
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