Improved Performance of Quantum Dots Light-emitting Diodes: The Case of Au-incorporated NiO Hole Injection Layer

2017 ◽  
Vol 46 (12) ◽  
pp. 1822-1824
Author(s):  
Zhiwei Li
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Improved Performance

P‐118: Efficient Quantum Dots Light‐Emitting Diodes with a thiocyanate hole injection layer

2019 ◽  
Vol 50 (1) ◽  
pp. 1693-1695
Author(s):  
Yangbing Zhu ◽  
Hailong Hu ◽  
Jintang Lin ◽  
Fushan Li ◽  
Tailiang Guo
Keyword(s):  
Quantum Dots ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer

scholarly journals Dual-functional quantum-dots light emitting diodes based on solution processable vanadium oxide hole injection layer

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Tae Yeon Kim ◽  
Sungho Park ◽  
Byung Jun Kim ◽  
Su Been Heo ◽  
Jong Hun Yu ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Vanadium Oxide ◽  
Reverse Bias ◽  
Light Emitting Diodes ◽  
Light Emitting Diode ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Dual Functional ◽  
Solution Processable

AbstractDual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m2 in a forward bias of 8.6 V. Meanwhile, the device could operate as a photodetector in a reverse bias condition. The device was perfectly turned off in a reverse bias, while an increase of photocurrent was observed during the illumination of 520 nm wavelength light on the device. The interfacial electronic structure of the device prepared with different concentration V2O5 solution was measured in detail using x-ray and ultraviolet photoelectron spectroscopy. Both the highest occupied molecular orbital and the gap state levels were moved closer to the Fermi level, according to increase the concentration of V2O5 solution. The change of gap state position enables to fabricate a dual-functional QLEDs. Therefore, the device could operate both as a photodetector and as a light-emitting diode with different applied bias. The result suggests that QLEDs can be used as a photosensor and as a light-emitting diode for the future display industry.

scholarly journals Regulation of hole transport layer for perovskite quantum dot light-emitting diodes

2021 ◽  
Vol 245 ◽  
pp. 03021
Author(s):  
Ronghong Zheng ◽  
Dong Huang ◽  
Dongyang Shen ◽  
Chengzhao Luo ◽  
Yu Chen
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Transport ◽  
Transport Layer ◽  
Hole Injection ◽  
Hole Transport Layer ◽  
Emission Layer ◽  
Light Emitting ◽  
Hole Injection Layer

Perovskite quantum dots have been widely used in light-emitting diodes (LEDs) because of their adjustable color, high quantum yield and easy solution processing. Furthermore, matching energy levels of device plays a profound role in the resultant LEDs. In this study, a polymeric material, namely poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4’-(N-(pbutylphenyl))diphenylamine)] (TFB), is introduced between the quantum dot emission layer and the hole injection layer PEDOT:PSS, which not only prevents the fluorescence quenching caused by the direct contact between the perovskite layer and the hole injection layer, but also reduces hole injection barrier, both being beneficial to the device performance. The optimal thickness of TFB has been obtained by adjusting the rotational speed and precursor solution concentration during spin coating. The optimized quantum dots LED has a switching on voltage of about 2.2 V, a maximum brightness of 4300 cd/m2, a maximum external quantum efficiency of 0.15%, and a maximum current density of 0.54 cd/A.

High performance organic light emitting diodes using substoichiometric tungsten oxide as efficient hole injection layer

2012 ◽  
Vol 13 (5) ◽  
pp. 796-806 ◽  
Author(s):  
Maria Vasilopoulou ◽  
George Papadimitropoulos ◽  
Leonidas C. Palilis ◽  
Dimitra G. Georgiadou ◽  
Panagiotis Argitis ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
High Performance ◽  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Organic Light

scholarly journals Enhanced hole injection in organic light-emitting diodes utilizing a copper iodide-doped hole injection layer

RSC Advances ◽  
2017 ◽  
Vol 7 (22) ◽  
pp. 13584-13589 ◽  
Author(s):  
Meiling Shan ◽  
Haipeng Jiang ◽  
Yu Guan ◽  
Dongsu Sun ◽  
Yu Wang ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Organic Light Emitting Diodes ◽  
Hole Injection ◽  
Copper Iodide ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Organic Light

We have demonstrated organic light-emitting diodes (OLEDs) by incorporating copper iodide (CuI) in 4,4′,4′′-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (m-MTDATA) as a hole injection layer (HIL) based on the emitting system of C545T–Alq3.

Efficient perovskite light-emitting diodes with modified hole injection layer

2021 ◽  
Author(s):  
Shuo Sun ◽  
Junjie Si ◽  
Zugang Liu ◽  
Rui Xu ◽  
Yihang Du ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Hole Injection ◽  
Light Emitting ◽  
Hole Injection Layer

scholarly journals Low-temperature solution-processed MoOx as hole injection layer for efficient quantum dot light-emitting diodes

RSC Advances ◽  
2017 ◽  
Vol 7 (44) ◽  
pp. 27464-27472 ◽  
Author(s):  
Jingling Li ◽  
Qiling Guo ◽  
Hu Jin ◽  
Kelai Wang ◽  
Dehua Xu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Light Emitting Diodes ◽  
Hole Injection ◽  
Solution Processed ◽  
Light Emitting ◽  
Hole Injection Layer ◽  
Temperature Solution

In this work, quantum dot light-emitting diodes (QD-LEDs) based on a low-temperature solution-processed MoOx hole injection layer were fabricated.

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