Multifunctional p‐Type Carbon Quantum Dots: a Novel Hole Injection Layer for High‐Performance Perovskite Light‐Emitting Diodes with Significantly Enhanced Stability

2019 ◽  
Vol 7 (24) ◽  
pp. 1901299 ◽  
Author(s):  
Zhibin Wang ◽  
Fanglong Yuan ◽  
Wenda Sun ◽  
Hongfei Shi ◽  
Tasawar Hayat ◽  
...  
2012 ◽  
Vol 13 (5) ◽  
pp. 796-806 ◽  
Author(s):  
Maria Vasilopoulou ◽  
George Papadimitropoulos ◽  
Leonidas C. Palilis ◽  
Dimitra G. Georgiadou ◽  
Panagiotis Argitis ◽  
...  

2019 ◽  
Vol 216 (11) ◽  
pp. 1900004 ◽  
Author(s):  
Hyeong‐Jin Seo ◽  
Ji‐Eun Lee ◽  
Su Been Heo ◽  
Minju Kim ◽  
Yeonjin Yi ◽  
...  

Nanoscale ◽  
2020 ◽  
Vol 12 (8) ◽  
pp. 4826-4832 ◽  
Author(s):  
Ping He ◽  
Yuxin Shi ◽  
Ting Meng ◽  
Ting Yuan ◽  
Yunchao Li ◽  
...  

In this mini review, we update the latest research in the design of high-performance WLEDs with different correlated color temperatures by tuning the red component using red emissive CQDs and single-component white emissive CQDs.


2009 ◽  
Vol 94 (10) ◽  
pp. 103506 ◽  
Author(s):  
B. J. Kim ◽  
Y. R. Ryu ◽  
T. S. Lee ◽  
H. W. White

RSC Advances ◽  
2017 ◽  
Vol 7 (42) ◽  
pp. 26322-26327 ◽  
Author(s):  
Tao Ding ◽  
Ning Wang ◽  
Chen Wang ◽  
Xinghua Wu ◽  
Wenbo Liu ◽  
...  

The introduction of CuSCN as the hole injection material significantly improved the turn-on voltage of quantum dot-based LEDs.


2019 ◽  
Vol 50 (1) ◽  
pp. 1693-1695
Author(s):  
Yangbing Zhu ◽  
Hailong Hu ◽  
Jintang Lin ◽  
Fushan Li ◽  
Tailiang Guo

2009 ◽  
Vol 517 (17) ◽  
pp. 5293-5297 ◽  
Author(s):  
Shui-Hsiang Su ◽  
Cheng-Chieh Hou ◽  
Jin-Shian Tsai ◽  
Meiso Yokoyama

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Tae Yeon Kim ◽  
Sungho Park ◽  
Byung Jun Kim ◽  
Su Been Heo ◽  
Jong Hun Yu ◽  
...  

AbstractDual-functional quantum-dots light emitting diodes (QLEDs) have been fabricated using solution processable vanadium oxide (V2O5) hole injection layer to control the carrier transport behavior. The device shows selectable functionalities of photo-detecting and light-emitting behaviors according to the different operating voltage conditions. The device emitted a bright green light at the wavelength of 536 nm, and with the maximum luminance of 31,668 cd/m2 in a forward bias of 8.6 V. Meanwhile, the device could operate as a photodetector in a reverse bias condition. The device was perfectly turned off in a reverse bias, while an increase of photocurrent was observed during the illumination of 520 nm wavelength light on the device. The interfacial electronic structure of the device prepared with different concentration V2O5 solution was measured in detail using x-ray and ultraviolet photoelectron spectroscopy. Both the highest occupied molecular orbital and the gap state levels were moved closer to the Fermi level, according to increase the concentration of V2O5 solution. The change of gap state position enables to fabricate a dual-functional QLEDs. Therefore, the device could operate both as a photodetector and as a light-emitting diode with different applied bias. The result suggests that QLEDs can be used as a photosensor and as a light-emitting diode for the future display industry.


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