Resolution and Peel Adhesion Strength of Photoelectrochemically Plated Copper Layers onto a TiO2-Adhered Alumina Substrate

1994 ◽  
Vol 67 (8) ◽  
pp. 2354-2355 ◽  
Author(s):  
Shinya Morishita ◽  
Ken-ichi Suzuki
2007 ◽  
Vol 14 (02) ◽  
pp. 241-253 ◽  
Author(s):  
YIWANG CHEN ◽  
WEI SUN ◽  
QILAN DENG ◽  
LIE CHEN ◽  
XIAOHUI HE

Surface modification of polytetrafluoroethylene (PTFE) films is done by exposing the films to a sodium naphthalenide ( Na /naphtha) etchant, and esterification of 4,4'-azobis(4-cyanopentanoic acid) (ACP) with the hydroxyl groups covalently linked to the surface, followed by the surface-initiated free radical polymerization of 4-vinylpyridine (4 VP). The surface elemental composition and topography of the poly(4-vinylpyridine) (PVP) graft-functionalized PTFE surfaces (PTFE-g-PVP surfaces) were characterized by X-ray photoelectron spectroscopy (XPS), attenuated total reflectance (ATR) FTIR spectroscopy, and atomic force microscopy (AFM). Water contact angles on the pristine PTFE surface and PTFE-g-PVP surfaces were measured. The PVP brushes on the PTFE surface with well-preserved pyridine groups were used not only as the chemisorption sites for the palladium complexes (without the need for prior sensitization by SnCl 2) during the electroless plating of copper, but also as an adhesion promotion layer to enhance the adhesion of the electrolessly deposited copper to the PTFE surfaces. The T-peel adhesion strength of the electrolessly deposited copper to the PVP grafted PTFE (PTFE-g-PVP) surface could reach about 7.2 N/cm. This adhesion strength was much higher than that of the electrolessly deposited copper to the pristine or Na /naphtha-treated PTFE surface. Effects of the graft polymerization time and the activation time in the PdCl 2 solution on the T-peel adhesion strength of the electrolessly deposited copper (from the Sn -free process) to the PTFE-g-PVP surface were determined.


2015 ◽  
Vol 355 ◽  
pp. 509-515 ◽  
Author(s):  
Ju Dy Lim ◽  
Pui Mun Lee ◽  
Daniel Min Woo Rhee ◽  
Kam Chew Leong ◽  
Zhong Chen

Author(s):  
J. R. Heffelfinger ◽  
C. B. Carter

Transmission-electron microscopy (TEM), scanning-electron microscopy (SEM) and energy-dispersive x-ray spectroscopy (EDS) were used to investigate the solid-state reaction between a thin yttria film and a (0001) α-alumina substrate. Systems containing Y2O3 (yttria) and Al2O3 (alumina) are seen in many technologically relevant applications. For example, yttria is being explored as a coating material for alumina fibers for metal-ceramic composites. The coating serves as a diffusion barrier and protects the alumina fiber from reacting with the metal matrix. With sufficient time and temperature, yttria in contact with alumina will react to form one or a combination of phases shown by the phase diagram in Figure l. Of the reaction phases, yttrium aluminum garnet (YAG) is used as a material for lasers and other optical applications. In a different application, YAG is formed as a secondary phase in the sintering of AIN. Yttria is added to AIN as a sintering aid and acts as an oxygen getter by reacting with the alumina in AIN to form YAG.


2003 ◽  
Vol 766 ◽  
Author(s):  
A. Sekiguchi ◽  
J. Koike ◽  
K. Ueoka ◽  
J. Ye ◽  
H. Okamura ◽  
...  

AbstractAdhesion strength in sputter-deposited Cu thin films on various types of barrier layers was investigated by scratch test. The barrier layers were Ta1-xNx with varied nitrogen concentration of 0, 0.2, 0.3, and 0.5. Microstructure observation by TEM indicated that each layer consists of mixed phases of β;-Ta, bcc-TaN0.1, hexagonal-TaN, and fcc-TaN, depending on the nitrogen concentration. A sulfur- containing amorphous phase was also present discontinuously at the Cu/barrier interfaces in all samples. Scratch test showed that delamination occurred at the Cu/barrier interface and that the overall adhesion strength increased with increasing the nitrogen concentration. A good correlation was found between the measured adhesion strength and the composing phases in the barrier layer.


2013 ◽  
Vol E96.C (3) ◽  
pp. 374-377 ◽  
Author(s):  
Kazuo SENDA ◽  
Tsuyoshi MATSUDA ◽  
Kuniaki TANAKA ◽  
Hiroaki USUI

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