scholarly journals A Calorimetric Study on the Relative Thermal Stability in Some Nickel(II) Complexes ContainingN,N′- orN,N-Diethylethylenediamine

1982 ◽  
Vol 55 (6) ◽  
pp. 1858-1861 ◽  
Author(s):  
Ryokichi Tsuchiya ◽  
Akira Uehara ◽  
Yoshiyuki Ohtsuka
Keyword(s):  
Thermal Stability ◽  
Calorimetric Study ◽  
Relative Thermal Stability

ChemInform Abstract: Aminosulfur Trifluorides: Relative Thermal Stability.

ChemInform ◽  
1989 ◽  
Vol 20 (21) ◽  
Author(s):  
P. A. MESSINA ◽  
K. C. MANGE ◽  
W. J. MIDDLETON
Keyword(s):  
Thermal Stability ◽  
Relative Thermal Stability

The relative thermal stability of polymer model compounds

1962 ◽  
Vol 6 (19) ◽  
pp. 47-56 ◽  
Author(s):  
Desmond Sheehan ◽  
Alan P. Bentz ◽  
John C. Petropoulos
Keyword(s):  
Thermal Stability ◽  
Polymer Model ◽  
Model Compounds ◽  
Relative Thermal Stability ◽  
Thermal Stability Of

Implant Isolation of Device Structures Containing Buried, Highly-Doped Layers

1990 ◽  
Vol 216 ◽  
Author(s):  
S. J. Pearton ◽  
F. Ren ◽  
L. A. D'Asaro ◽  
W. S. Hobson ◽  
T. R. Fullowan ◽  
...  
Keyword(s):  
Thermal Stability ◽  
Deep Level ◽  
Dose Range ◽  
Hydrogen Ion ◽  
Current Gain ◽  
High Resistivity ◽  
Device Structures ◽  
Hydrogen Ion Implantation ◽  
Relative Thermal Stability ◽  
Thermal Stability Of

ABSTRACTThe formation of high resistivity (> 107 Ω□) regions in GaAs-AlGaAs HBT and SEED structures by oxygen and hydrogen ion implantation is described. Multiple energy implants in the dose range 1013 cm−3 (for O+) and 1015 cm−2 (for H+), followed by annealing around 500°C are necessary to isolate structures ∼2 μm thick. In each case, the evolution of the sheet resistance of the implanted material with annealing is consistent with a reduction in hopping probabilities of trapped carriers between deep level states for temperatures up to ∼600°C, followed by significant annealing of these deep levels. A comparison of the relative thermal stability of O+ or H+ ion implantisolated p+ material is given. Small geometry (2 × 9 μm2) HBTs exhibiting current gain of 44 and cut-off frequency fT as high as 45 GHz are demonstrated using implant isolation.

A Calorimetric Study of the Thermal Stability of Barnase and Its Interaction with 3'GMP

Biochemistry ◽  
1994 ◽  
Vol 33 (13) ◽  
pp. 3919-3926 ◽  
Author(s):  
Jose C. Martinez ◽  
Mohamed El Harrous ◽  
Vladimir V. Filimonov ◽  
Pedro L. Mateo ◽  
Alan R. Fersht
Keyword(s):  
Thermal Stability ◽  
Calorimetric Study ◽  
Thermal Stability Of
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