Effect of gate voltage and structural parameters on the Subthreshold Swing and the DIBL of Si-SiO2 GAA quantum wire transistor

2016 ◽  
pp. 59-64
Keyword(s):  
Gate Voltage ◽  
Quantum Wire ◽  
Structural Parameters ◽  
Subthreshold Swing

scholarly journals Analysis of subthreshold swing in junctionless double gate MOSFET using stacked high-k gate oxide

2021 ◽  
Vol 11 (1) ◽  
pp. 240
Author(s):  
Hakkee Jung
Keyword(s):  
Dielectric Constant ◽  
Oxide Film ◽  
Gate Voltage ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Channel Length ◽  
Subthreshold Swing ◽  
Asymmetric Structure ◽  
Double Gate ◽  
High K

In this paper, the subthreshold swing was observed when the stacked high-k gate oxide was used for a junctionless double gate (JLDG) MOSFET. For this purpose, a subthreshold swing model was presented using the series-type potential model derived from the Poisson equation. The results of the model presented in this paper were in good agreement with the two-dimensional numerical values and those from other papers. Using this model, the variation of the subthreshold swing for the channel length, silicon thickness, gate oxide thickness, and dielectric constant of the stacked high-k material was observed using the dielectric constant as a parameter. As a result, the subthreshold swing was reduced when the high-k materials were used as the stacked gate oxide film. In the case of the asymmetric structure, the subthreshold swing can be reduced than that of the symmetric JLDG MOSFET when the dielectric constant of the bottom stacked oxide film was greater than that of the top stacked oxide film. In the case of the asymmetric structure, the subthreshold swing could be also reduced by applying the bottom gate voltage lower than the top gate voltage.

Dependences of Structural Parameters on the Characteristics of Poly-Si Thin-Film Transistors after Plasma Passivation

2003 ◽  
Vol 762 ◽  
Author(s):  
Cheng-Ming Yu ◽  
Tiao-Yuan Huang ◽  
Tan-Fu Lei ◽  
Horng-Chih Lin
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Detailed Analysis ◽  
Thin Film Transistors ◽  
Structural Parameters ◽  
Subthreshold Swing ◽  
Device Performance ◽  
Short Channel ◽  
Plasma Passivation ◽  
Si Thin Film

AbstractThe effects of NH3 and H2 plasma passivation on the characteristics of poly-Si thin-film transistors with source/drain extensions induced by a bottom sub-gate were studied. Our results show that significant improvements in device performance can be obtained by both passivation methods. Moreover, NH3-plasma-treatment appears to be more effective in reducing the off-state leakage, subthreshold swing, compared to H2 plasma passivation. NH3 plasma treatment is also found to be more effective in reducing the anomalous subthrehold hump phenomenon observed in non-plasma-treated short-channel devices. Detailed analysis suggests that all these improvements can be explained by the more effective passivation of the traps distributed in both the front and back sides of the channel by NH3 plasma treatment.

scholarly journals Effects of Charge Trapping at the MoS2–SiO2 Interface on the Stability of Subthreshold Swing of MoS2 Field Effect Transistors

Materials ◽  
2020 ◽  
Vol 13 (13) ◽  
pp. 2896 ◽  
Author(s):  
Xinnan Huang ◽  
Yao Yao ◽  
Songang Peng ◽  
Dayong Zhang ◽  
Jingyuan Shi ◽  
...  
Keyword(s):  
Gate Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Trapping ◽  
Interface States ◽  
Subthreshold Swing ◽  
Level Shift ◽  
Voltage Sweep ◽  
The Stability ◽  
Memory Applications

The stability of the subthreshold swing (SS) is quite important for switch and memory applications in logic circuits. The SS in our MoS2 field effect transistor (FET) is enlarged when the gate voltage sweep range expands towards the negative direction. This is quite different from other reported MoS2 FETs whose SS is almost constant while varying gate voltage sweep range. This anomalous SS enlargement can be attributed to interface states at the MoS2–SiO2 interface. Moreover, a deviation of SS from its linear relationship with temperature is found. We relate this deviation to two main reasons, the energetic distribution of interface states and Fermi level shift originated from the thermal activation. Our study may be helpful for the future modification of the MoS2 FET that is applied in the low power consumption devices and circuits.

Comparison studies of infrared photodetectors with a quantum-dot and a quantum-wire base

2011 ◽  
Vol 19 (4) ◽  
Author(s):  
M. El_Tokhy ◽  
I. Mahmoud ◽  
H. Konber
Keyword(s):  
Quantum Dot ◽  
Dark Current ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Structural Parameters ◽  
Theoretical Models ◽  
Characteristic Size ◽  
Infrared Photodetectors ◽  
Doping Density ◽  
Sensing Applications

AbstractThis paper mainly presents a theoretical analysis for the characteristics of quantum dot infrared photodetectors (QDIPs) and quantum wire infrared photodetectors (QRIPs). The paper introduces a unique mathematical model of solving Poisson’s equations with the usage of Lambert W functions for infrared detectors’ structures based on quantum effects. Even though QRIPs and QDIPs have been the subject of extensive researches and development during the past decade, it is still essential to implement theoretical models allowing to estimate the ultimate performance of those detectors such as photocurrent and its figure-of-merit detectivity vs. various parameter conditions such as applied voltage, number of quantum wire layers, quantum dot layers, lateral characteristic size, doping density, operation temperature, and structural parameters of the quantum dots (QDs), and quantum wires (QRs). A comparison is made between the computed results of the implemented models and fine agreements are observed. It is concluded from the obtained results that the total detectivity of QDIPs can be significantly lower than that in the QRIPs and main features of the QRIPs such as large gap between the induced photocurrent and dark current of QRIP which allows for overcoming the problems in the QDIPs. This confirms what is evaluated before in the literature. It is evident that by increasing the QD/QR absorption volume in QDIPs/QRIPs as well as by separating the dark current and photocurrents, the specific detectivity can be improved and consequently the devices can operate at higher temperatures. It is an interesting result and it may be benefit to the development of QDIP and QRIP for infrared sensing applications.

Nonlinear Transport of the Wigner Crystal on Superfluid 4He in a Quasi-One-Dimensional Channel

2014 ◽  
Vol 09 (04) ◽  
pp. 349-365 ◽  
Author(s):  
Anna A. Vasylenko ◽  
Vyacheslav R. Misko
Keyword(s):  
Liquid Helium ◽  
Particle Velocity ◽  
Gate Voltage ◽  
Quantum Wire ◽  
Superfluid 4He ◽  
Wigner Crystal ◽  
Average Particle ◽  
Special Issue ◽  
One Dimensional ◽  
Single File

We study transport properties of a Wigner crystal driven by an external force on the surface of superfluid 4 He , in the "quantum wire" regime, i.e. in the quasi-one-dimensional (quasi-1D) case when a typical width of the channel is comparable to the inter-electron separation. Utilizing molecular dynamics simulations, we investigate the electronic transport through the channels with different constrictions: (i) geometrical constrictions with varying shape and size, and (ii) a saddle-point potential with varying gate voltage. The average particle velocity has been calculated as a function of the driving force or gate voltage. We have revealed a significant difference in the dynamical behavior for long and short constrictions. In particular, we found that the oscillations of the average particle velocity in channels with short constrictions exhibit a clear correlation with the transitions between the states with different numbers of rows of particles in the constriction, while for channels with longer constrictions these oscillations are suppressed. The obtained results are in agreement with the recent experimental observations,1 and thus bring new important insights into the dynamics of electrons floating on the surface of superfluid 4 He in channels with constrictions. [Formula: see text] Special Issue Comments: This article presents results on the dynamics of electrons moving on the surface of liquid helium in narrow channels with constrictions, with a focus on the "quantum wire", i.e. single file, regime. This article is connected to the Special Issue articles about advanced statistical properties in single file dynamics39 and the experiments on liquid helium.40

scholarly journals Effects of Back-Gate Bias on Subthreshold Swing of Tunnel Field-Effect Transistor

Electronics ◽  
2019 ◽  
Vol 8 (12) ◽  
pp. 1415 ◽  
Author(s):  
Jaehong Lee ◽  
Garam Kim ◽  
Sangwan Kim
Keyword(s):  
Gate Voltage ◽  
Computer Aided Design ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Subthreshold Swing ◽  
Gate Bias ◽  
Back Gate ◽  
Effect Transistor ◽  
Tunnel Field Effect Transistor ◽  
Aided Design

In this study, the effects of back-gate bias on the subthreshold swing (S) of a tunnel field-effect transistor (TFET) were discussed. The electrostatic characteristics of the back-gated TFET were obtained using technology computer-aided design (TCAD) simulation and were explained using the concepts of turn-on and inversion voltages. As a result, S decreased, when the back-gate voltage increased; this behavior is attributed to the resultant increase in inversion voltage. In addition, it was found that the on–off current ratio of the TFET increased with a decrease in S due to the back-gate voltage.

Strain measurement in In0.2Ga0.8As/GaAs quantum wires by convergent beam electron diffraction

1995 ◽  
Vol 53 ◽  
pp. 444-445
Author(s):  
S. Hillyard ◽  
Y.-P. Chen ◽  
J.D. Reed ◽  
W.J. Schaff ◽  
L.F. Eastman ◽  
...  
Keyword(s):  
Electron Diffraction ◽  
Semiconductor Lasers ◽  
Quantum Wire ◽  
Quantum Wires ◽  
Convergent Beam Electron Diffraction ◽  
Zero Order ◽  
Beam Electron ◽  
Local Lattice ◽  
Device Applications ◽  
Convergent Beam

The positions of high-order Laue zone (HOLZ) lines in the zero order disc of convergent beam electron diffraction (CBED) patterns are extremely sensitive to local lattice parameters. With proper care, these can be measured to a level of one part in 104 in nanometer sized areas. Recent upgrades to the Cornell UHV STEM have made energy filtered CBED possible with a slow scan CCD, and this technique has been applied to the measurement of strain in In0.2Ga0.8 As wires.Semiconductor quantum wire structures have attracted much interest for potential device applications. For example, semiconductor lasers with quantum wires should exhibit an improvement in performance over quantum well counterparts. Strained quantum wires are expected to have even better performance. However, not much is known about the true behavior of strain in actual structures, a parameter critical to their performance.

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