Optoelectronic and Transport Properties of Gapped Graphene

2016 ◽  
pp. 489-504 ◽  
Author(s):  
Godfrey Gumbs ◽  
Danhong Huang ◽  
Andrii Iurov ◽  
Bo Gao
Keyword(s):  
Transport Properties ◽  
Gapped Graphene

SUBSTRATE MODULATED GRAPHENE QUANTUM DOTS

2012 ◽  
Vol 26 (25) ◽  
pp. 1250162
Author(s):  
QIONG MA ◽  
TAO TU ◽  
LI WANG ◽  
HAI-OU LI ◽  
ZHI-RONG LIN ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Energy Spectrum ◽  
Quantum Dot ◽  
Transport Properties ◽  
Coupling Strength ◽  
Graphene Quantum Dots ◽  
Two Dimensional ◽  
Promising Candidate ◽  
Gapped Graphene ◽  
Practical Applications

We propose a method to use gapped graphene as barriers to confine electrons in gapless graphene and form a good quantum dot, which can be realized on an oxygen-terminated SiO 2 substrate partly hydrogen-passivated. In particular, we use deposited ferromagnetic insulators as contacts which give rise to spin-dependent energy spectrum and transport properties. Furthermore, we upgrade this method to form two-dimensional quantum dot arrays, whose coupling strength between neighboring dots can be uniquely anisotropic. Compared to complexity of other approaches to form quantum dot in graphene, the setup suggested here is a promising candidate for practical applications.

Magneto-transport properties of gapped graphene

2010 ◽  
Vol 21 (14) ◽  
pp. 145703 ◽  
Author(s):  
Liwei Jiang ◽  
Yisong Zheng ◽  
Haidong Li ◽  
Honghai Shen
Keyword(s):  
Transport Properties ◽  
Gapped Graphene

Spectroscopic Diagnostics of Tokamaks

1988 ◽  
Vol 102 ◽  
pp. 165-174
Author(s):  
C. de Michelis
Keyword(s):  
Transport Properties ◽  
Power Losses ◽  
Spectroscopic Diagnostics ◽  
Important Concern

AbstractImpurities being an important concern in tokamaks, spectroscopy plays a key role in their understanding. Techniques for the evaluation of concentrations, power losses and transport properties are surveyed, and a few developments are outlined.

Structure and Orientation of As Precipitates in LT-MBE Grown GaAs

1991 ◽  
Vol 49 ◽  
pp. 900-901 ◽  
Author(s):  
Alain Claverie ◽  
Zuzanna Liliental-Weber
Keyword(s):  
Transport Properties ◽  
Layer Thickness ◽  
Growth Temperature ◽  
Low Temperatures ◽  
Lattice Parameter ◽  
Crystalline Quality ◽  
Insulating Properties ◽  
Lt Gaas

GaAs layers grown by MBE at low temperatures (in the 200°C range, LT-GaAs) have been reported to have very interesting electronic and transport properties. Previous studies have shown that, before annealing, the crystalline quality of the layers is related to the growth temperature. Lowering the temperature or increasing the layer thickness generally results in some columnar polycrystalline growth. For the best “temperature-thickness” combinations, the layers may be very As rich (up to 1.25%) resulting in an up to 0.15% increase of the lattice parameter, consistent with the excess As. Only after annealing are the technologically important semi-insulating properties of these layers observed. When annealed in As atmosphere at about 600°C a decrease of the lattice parameter to the substrate value is observed. TEM studies show formation of precipitates which are supposed to be As related since the average As concentration remains almost unchanged upon annealing.

Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

Transport properties of Ni81.5B18.5 - YP y amorphous alloys

1989 ◽  
Vol 50 (21) ◽  
pp. 3233-3242 ◽  
Author(s):  
M. Očko ◽  
E. Babić
Keyword(s):  
Transport Properties ◽  
Amorphous Alloys

Transport properties of evaporated versus sputtered amorphous germanium films

1980 ◽  
Vol 41 (10) ◽  
pp. 1173-1181 ◽  
Author(s):  
M.-L. Theye ◽  
A. Gheorghiu ◽  
T. Rappeneau ◽  
A. Lewis
Keyword(s):  
Transport Properties ◽  
Amorphous Germanium ◽  
Germanium Films
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