Spin-dependent transport properties through gapless graphene-based ferromagnet and gapped graphene-based superconductor junction

2012 ◽  
Vol 112 (1) ◽  
pp. 013901 ◽  
Author(s):  
Y. Hajati ◽  
M. Zargar Shoushtari ◽  
G. Rashedi
Keyword(s):  
Transport Properties ◽  
Gapped Graphene ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals Strain Investigation on Spin-Dependent Transport Properties of γ-Graphyne Nanoribbon Between Gold Electrodes

2021 ◽  
Vol 16 (1) ◽  
Author(s):  
Yun Li ◽  
Xiaobo Li ◽  
Shidong Zhang ◽  
Liemao Cao ◽  
Fangping Ouyang ◽  
...  
Keyword(s):  
Transport Properties ◽  
High Performance ◽  
Density Functional ◽  
Strain Engineering ◽  
Molecular Junctions ◽  
Spin Splitting ◽  
Functional Theory ◽  
Spin Dependent Transport ◽  
The Density Functional Theory ◽  
Dependent Transport

AbstractStrain engineering has become one of the effective methods to tune the electronic structures of materials, which can be introduced into the molecular junction to induce some unique physical effects. The various γ-graphyne nanoribbons (γ-GYNRs) embedded between gold (Au) electrodes with strain controlling have been designed, involving the calculation of the spin-dependent transport properties by employing the density functional theory. Our calculated results exhibit that the presence of strain has a great effect on transport properties of molecular junctions, which can obviously enhance the coupling between the γ-GYNR and Au electrodes. We find that the current flowing through the strained nanojunction is larger than that of the unstrained one. What is more, the length and strained shape of the γ-GYNR serves as the important factors which affect the transport properties of molecular junctions. Simultaneously, the phenomenon of spin-splitting occurs after introducing strain into nanojunction, implying that strain engineering may be a new means to regulate the electron spin. Our work can provide theoretical basis for designing of high performance graphyne-based devices in the future.

scholarly journals Nanodevices engineering and spin transport properties of MnBi2Te4 monolayer

2021 ◽  
Vol 7 (1) ◽  
Author(s):  
Yipeng An ◽  
Kun Wang ◽  
Shijing Gong ◽  
Yusheng Hou ◽  
Chunlan Ma ◽  
...  
Keyword(s):  
Transport Properties ◽  
Field Effect Transistors ◽  
First Principles Calculations ◽  
Next Generation ◽  
Strong Response ◽  
The Road ◽  
Spin Dependent Transport ◽  
2D Structure ◽  
Filtering Effect ◽  
Dependent Transport

AbstractTwo-dimensional (2D) magnetic materials are essential for the development of the next-generation spintronic technologies. Recently, layered van der Waals (vdW) compound MnBi2Te4 (MBT) has attracted great interest, and its 2D structure has been reported to host coexisting magnetism and topology. Here, we design several conceptual nanodevices based on MBT monolayer (MBT-ML) and reveal their spin-dependent transport properties by means of the first-principles calculations. The pn-junction diodes and sub-3-nm pin-junction field-effect transistors (FETs) show a strong rectifying effect and a spin filtering effect, with an ideality factor n close to 1 even at a reasonably high temperature. In addition, the pip- and nin-junction FETs give an interesting negative differential resistive (NDR) effect. The gate voltages can tune currents through these FETs in a large range. Furthermore, the MBT-ML has a strong response to light. Our results uncover the multifunctional nature of MBT-ML, pave the road for its applications in diverse next-generation semiconductor spin electric devices.

Oxygen manipulation at the Co/SiO2 interface and its effect on spin-dependent transport properties

2020 ◽  
Vol 126 (7) ◽  
Author(s):  
Qian Liu ◽  
Yaqiang Tian ◽  
Xiaoping Zheng ◽  
Liansheng Chen ◽  
Yuqing Zhao ◽  
...  
Keyword(s):  
Transport Properties ◽  
Spin Dependent Transport ◽  
Dependent Transport

Tunneling magnetoresistance and light modulation in Fe4N(La2/3Sr1/3MnO3)/C60/Fe4N single molecule magnetic tunnel junctions

2020 ◽  
Vol 8 (9) ◽  
pp. 3137-3146 ◽  
Author(s):  
Xuefei Han ◽  
Wenbo Mi ◽  
Dunhui Wang
Keyword(s):  
Transport Properties ◽  
Single Molecule ◽  
Tunnel Junctions ◽  
Magnetic Tunnel Junctions ◽  
Tunneling Magnetoresistance ◽  
Light Modulation ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport properties and light modulation of Fe4N/C60/Fe4N and LSMO/C60/Fe4N single molecule magnetic tunnel junctions.

Effect of MgO Barrier Insertion on Spin-Dependent Transport Properties of CoFe/n-GaAs Heterojunctions

2012 ◽  
Vol 51 (2) ◽  
pp. 02BM01 ◽  
Author(s):  
Takafumi Akiho ◽  
Tetsuya Uemura ◽  
Masanobu Harada ◽  
Ken-ichi Matsuda ◽  
Masafumi Yamamoto
Keyword(s):  
Transport Properties ◽  
Spin Dependent Transport ◽  
Dependent Transport

Spin-dependent transport properties of hetero-junction based on zigzag graphene nanoribbons with edge hydrogenation and oxidation

2016 ◽  
Vol 380 (5-6) ◽  
pp. 730-738 ◽  
Author(s):  
Li-ling Cui ◽  
Meng-qiu Long ◽  
Xiao-jiao Zhang ◽  
Xin-mei Li ◽  
Dan Zhang ◽  
...  
Keyword(s):  
Transport Properties ◽  
Graphene Nanoribbons ◽  
Spin Dependent Transport ◽  
Dependent Transport ◽  
Zigzag Graphene Nanoribbons

scholarly journals Spin dependent Transport Properties in Ferromagnetic Double Barrier Junctions.

2001 ◽  
Vol 25 (4−2) ◽  
pp. 763-766
Author(s):  
T. Siripongsakul ◽  
M. Oogane ◽  
J. Murai ◽  
Andrew C. C. Yu ◽  
H. Kubota ◽  
...  
Keyword(s):  
Transport Properties ◽  
Double Barrier ◽  
Spin Dependent Transport ◽  
Dependent Transport

scholarly journals Ab initio modelling of spin relaxation lengths in disordered graphene nanoribbons

2019 ◽  
Vol 21 (47) ◽  
pp. 26027-26032
Author(s):  
Wudmir Y. Rojas ◽  
Cesar E. P. Villegas ◽  
Alexandre R. Rocha
Keyword(s):  
Ab Initio ◽  
Transport Properties ◽  
Spin Relaxation ◽  
Graphene Nanoribbons ◽  
Relaxation Length ◽  
Spin Dependent Transport ◽  
Armchair Graphene Nanoribbons ◽  
Dependent Transport ◽  
Armchair Graphene

Ab initio spin-dependent transport properties of armchair graphene nanoribbons are studied with emphasis in determining the spin-relaxation length.

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