Porous Silicon as Substrate for Epitaxial Films Growth

2016 ◽  
pp. 143-164
Author(s):  
Eugene Chubenko ◽  
Sergey Redko ◽  
Alexey Dolgiy ◽  
Hanna Bandarenka ◽  
Vitaly Bondarenko
Keyword(s):  
Porous Silicon ◽  
Epitaxial Films

Precipitation in Al + 4% Cu Epitaxial Films

1968 ◽  
Vol 26 ◽  
pp. 384-385
Author(s):  
S. Herd ◽  
S. M. Mader
Keyword(s):  
Solid Solution ◽  
Bulk Material ◽  
Epitaxial Films ◽  
Detectable Change ◽  
Cu Films ◽  
Solution Treated ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Deposited Films

Single crystal films in (001) orientation, about 1500 Å thick, were produced by R-F sputtering of Al + 4 wt % Cu onto cleaved KCl at 150°C substrate temperature. The as-deposited films contained numerous θ-CuAl2 particles (C16 structure) about 0.1μ in size. They were transferred onto Mo screens, solution treated and rapidly cooled (within about ½ min) so as to retain a homogeneous solid solution. Subsequently, the films were aged in vacuum at various temperatures in order to induce precipitation and to compare structures and morphologies of precipitate particles in Al-Cu films with those found in age hardened bulk material.Aging for 3 weeks at 60°C or 48 hrs at 100°C did not produce any detectable change in high resolution micrographs or diffraction patterns. In this range Guinier-Preston zones (GP) form in quenched bulk material. The absence of GP in the present experiments in this aging range is perhaps due to the cooling rate employed, which might be more equivalent to an aged and reverted bulk material than to a quenched one.

Epitaxial growth manner and structure of superconducting oxide films

1990 ◽  
Vol 48 (4) ◽  
pp. 2-3
Author(s):  
Yoshichika Bando ◽  
Takahito Terashima ◽  
Kenji Iijima ◽  
Kazunuki Yamamoto ◽  
Kazuto Hirata ◽  
...  
Keyword(s):  
Ultrathin Films ◽  
Film Surface ◽  
High Energy ◽  
Epitaxial Films ◽  
Layer By Layer ◽  
Initial Growth ◽  
In Situ Growth ◽  
High Quality ◽  
Activated Reactive Evaporation

The high quality thin films of high-Tc superconducting oxide are necessary for elucidating the superconducting mechanism and for device application. The recent trend in the preparation of high-Tc films has been toward “in-situ” growth of the superconducting phase at relatively low temperatures. The purpose of “in-situ” growth is to attain surface smoothness suitable for fabricating film devices but also to obtain high quality film. We present the investigation on the initial growth manner of YBCO by in-situ reflective high energy electron diffraction (RHEED) technique and on the structural and superconducting properties of the resulting ultrathin films below 100Å. The epitaxial films have been grown on (100) plane of MgO and SrTiO, heated below 650°C by activated reactive evaporation. The in-situ RHEED observation and the intensity measurement was carried out during deposition of YBCO on the substrate at 650°C. The deposition rate was 0.8Å/s. Fig. 1 shows the RHEED patterns at every stage of deposition of YBCO on MgO(100). All the patterns exhibit the sharp streaks, indicating that the film surface is atomically smooth and the growth manner is layer-by-layer.

Calculation of exchange energy in quantum dots : application to porous silicon

1993 ◽  
Vol 03 (C5) ◽  
pp. 355-358 ◽  
Author(s):  
G. FISHMAN ◽  
R. ROMESTAIN ◽  
J. C. VIAL
Keyword(s):  
Quantum Dots ◽  
Porous Silicon ◽  
Exchange Energy

ANTI-REFLECTIVE PROPERTIES OF GRADIENT-POROUS SILICON

2017 ◽  
pp. 16-25
Author(s):  
E. A. Gosteva ◽  
V. V. Starkov ◽  
Yu. N. Parhomenko ◽  
M. O. Kah ◽  
I. A. Iwe
Keyword(s):  
Porous Silicon

Investigation of Porous Silicon/Carbon Composite as Anodes for Lithium Ion Batteries

2015 ◽  
Vol 30 (4) ◽  
pp. 351 ◽  
Author(s):  
HUANG Yan-Hua ◽  
HAN Xiang ◽  
CHEN Hui-Xin ◽  
CHEN Song-Yan ◽  
YANG Yong
Keyword(s):  
Porous Silicon ◽  
Lithium Ion Batteries ◽  
Lithium Ion ◽  
Carbon Composite ◽  
Silicon Carbon

Scattering Rings in Birefringent Porous Silicon

2003 ◽  
Vol 762 ◽  
Author(s):  
Claudio J. Oton ◽  
Zeno Gaburro ◽  
Mher Ghulinyan ◽  
Nicola Daldosso ◽  
Lucio Pancheri ◽  
...  
Keyword(s):  
Dielectric Constant ◽  
Light Scattering ◽  
Porous Silicon ◽  
Direct Measurement ◽  
Optical Anisotropy ◽  
Oblique Incidence ◽  
Laser Light ◽  
Anisotropic Scattering ◽  
Scattering Measurements

AbstractWe report the observation of strongly anisotropic scattering of laser light at oblique incidence on (100)-oriented porous silicon layers. We performed angle-resolved light scattering measurements and three concentric rings were observed. Modeling porous silicon by means of nanometric columnar air pores and an effective anisotropic uniaxial dielectric constant explains the observed phenomenon, and besides, the observation of the angle aperture of these rings allows a direct measurement of relative birefringence. We finally study the changes of optical anisotropy after different modifications of the structure.

In-depth Analysis of the Impurities in GaN

1996 ◽  
Vol 1 ◽  
Author(s):  
A. P. Kovarsky ◽  
V. S. Strykanov
Keyword(s):  
Secondary Ion Mass Spectrometry ◽  
Dynamic Range ◽  
Detection Limits ◽  
Background Level ◽  
Epitaxial Films ◽  
Depth Analysis ◽  
Lower Detection ◽  
Minimum Detection Level ◽  
Ion Yields ◽  
Secondary Ion

GaN epitaxial films were analyzed by Secondary Ion Mass Spectrometry (SIMS). Standard implanted samples were used to determine the appropriate analytical conditions for analysis of impurities. The dose and energy of implantation for selected elements (Mg, Al, Si, Zn, Cd, H, C and O) were chosen so the maximum impurity concentration was not more than 1020 atoms/cm3. The optimum analysis conditions were ascertained from the standards for each element, and the detection limits were deduced from the background levels of the implantation profiles. We demonstate that lower detection limits of 1015 atoms/cm3 with a dynamic range 103 − 105 are possible. Zn and Cd have low ion yields, so the minimum detection level for these elements is the background level of the detector. The detection limits of the other elements are determined by the contamination of an initial GaN matrix.

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