- Applications of Metal-Induced Crystallization Polycrystalline Silicon for Advanced Flat-Panel Displays

2015 ◽  
pp. 212-265
Keyword(s):  
Polycrystalline Silicon ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

A High-Performance Polycrystalline Silicon Thin-Film Transistor Using Metal-Induced Crystallization with Ni Solution

1998 ◽  
Vol 37 (Part 1, No. 12B) ◽  
pp. 7193-7197 ◽  
Author(s):  
Soo Young Yoon ◽  
Sung Ki Kim ◽  
Jae Young Oh ◽  
YoungJin Choi ◽  
Woo Sung Shon ◽  
...  
Keyword(s):  
Thin Film ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Thin Film Transistor ◽  
Silicon Thin Film ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Al‐doped and Sb‐doped polycrystalline silicon obtained by means of metal‐induced crystallization

1987 ◽  
Vol 62 (9) ◽  
pp. 3726-3732 ◽  
Author(s):  
S. F. Gong ◽  
H. T. G. Hentzell ◽  
A. E. Robertsson ◽  
L. Hultman ◽  
S.‐E. Hörnström ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

High Performance Thin Film Transistors for Scanner Applications

1990 ◽  
Vol 182 ◽  
Author(s):  
B.-C. Hseih ◽  
G.A. Hawkins ◽  
S. Ashok
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
High Performance ◽  
Silicon Film ◽  
Chemical Vapor ◽  
Gate Insulator ◽  
Flat Panel Displays ◽  
Flat Panel ◽  
Amorphous Silicon Film

AbstractWe report on the characteristics of polycrystalline silicon (polysilicon) thin film transistors (TFTs) fabricated with low temperature crystallized LPCVD amorphous silicon film as an active layer and plasma enhanced chemical vapor deposition (PECVD) SiO2 as a gate insulator. High performance transistor characteristics are achieved, even though no process temperature exceeds 600°C. No threshold drift has been observed. As a result, these devices are highly suitable for application to image scanners as well as flat panel displays.

Polycrystalline silicon obtained by gold metal induced crystallization

2004 ◽  
Vol 338-340 ◽  
pp. 178-182 ◽  
Author(s):  
L. Pereira ◽  
H. Águas ◽  
R.M. Martins ◽  
E. Fortunato ◽  
R. Martins
Keyword(s):  
Polycrystalline Silicon ◽  
Metal Induced Crystallization ◽  
Induced Crystallization ◽  
Gold Metal

Polycrystalline silicon prepared by metal induced crystallization

2003 ◽  
Vol 440 (1-2) ◽  
pp. 1-4 ◽  
Author(s):  
Jong Hyun Choi ◽  
Do Young Kim ◽  
Seung Soo Kim ◽  
Seong Jin Park ◽  
Jin Jang
Keyword(s):  
Polycrystalline Silicon ◽  
Metal Induced Crystallization ◽  
Induced Crystallization

Polycrystalline silicon obtained by metal induced crystallization using different metals

2004 ◽  
Vol 451-452 ◽  
pp. 334-339 ◽  
Author(s):  
L. Pereira ◽  
H. Águas ◽  
R.M.S. Martins ◽  
P. Vilarinho ◽  
E. Fortunato ◽  
...  
Keyword(s):  
Polycrystalline Silicon ◽  
Metal Induced Crystallization ◽  
Induced Crystallization
Sign in / Sign up

Export Citation Format

Share Document