Radio-Frequency and Microwave Applications: Similarities, Advantages, and Limitations

Author(s):  
Hussein Hassan ◽  
Yetenayet Tola ◽  
Hosahalli Ramaswamy
Author(s):  
F.F. do Carmo ◽  
J.P.C. do Nascimento ◽  
J.E.V. de Morais ◽  
V.C. Martins ◽  
J.C. Sales ◽  
...  

2019 ◽  
Vol 783 ◽  
pp. 652-661 ◽  
Author(s):  
D.V.M. Paiva ◽  
M.A.S. Silva ◽  
R.G.M. de Oliveira ◽  
A.R. Rodrigues ◽  
L.M.U.D. Fechine ◽  
...  

Materials ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 2859 ◽  
Author(s):  
Chorom Jang ◽  
Jin-Kwan Park ◽  
Gi-Ho Yun ◽  
Hyang Hee Choi ◽  
Hee-Jo Lee ◽  
...  

In this review, the advances in radio-frequency (RF) /microwave chemical gas sensors using conducting polymers are discussed. First, the introduction of various conducting polymers is described. Only polyaniline (PANi), polypyrrole (PPy) and poly(3,4-ethylenedioxythiophene) (PEDOT), which are mainly used for gas sensors in RF/microwave region, are focused in this review. Sensing mechanism of the three conducting polymers are presented. And the RF/microwave characteristics and RF/microwave applications of the three conducting polymers are discussed. Moreover, the gas sensors using conducting polymers in RF/microwave frequencies are described. Finally, the the challenges and the prospects of the next generation of the RF/microwave based chemical sensors for wireless applications are proposed.


Author(s):  
Z. Liliental-Weber ◽  
C. Nelson ◽  
R. Ludeke ◽  
R. Gronsky ◽  
J. Washburn

The properties of metal/semiconductor interfaces have received considerable attention over the past few years, and the Al/GaAs system is of special interest because of its potential use in high-speed logic integrated optics, and microwave applications. For such materials a detailed knowledge of the geometric and electronic structure of the interface is fundamental to an understanding of the electrical properties of the contact. It is well known that the properties of Schottky contacts are established within a few atomic layers of the deposited metal. Therefore surface contamination can play a significant role. A method for fabricating contamination-free interfaces is absolutely necessary for reproducible properties, and molecularbeam epitaxy (MBE) offers such advantages for in-situ metal deposition under UHV conditions


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