Electrical Properties of Magneto-Dielectric Films

2010 ◽  
pp. 247-288
Keyword(s):  
Electrical Properties ◽  
Dielectric Films

Charge Trapping in Hafnium Silicate Films with Modulated Composition and Enhanced Permittivity

2013 ◽  
Vol 854 ◽  
pp. 125-133 ◽  
Author(s):  
Larysa Khomenkova ◽  
Xavier Portier ◽  
Abdelilah Slaoui ◽  
Fabrice Gourbilleau
Keyword(s):  
Dielectric Constant ◽  
Electrical Properties ◽  
Magnetron Sputtering ◽  
Annealing Temperature ◽  
Annealing Treatment ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Radio Frequency Magnetron Sputtering ◽  
Hafnium Silicate ◽  
Evolution Of Microstructure

Hafnium silicate dielectric films were fabricated by radio frequency magnetron sputtering. Their microstructure and electrical properties were studied versus annealing treatment. The evolution of microstructure and the formation of alternated HfO2-rich and SiO2-rich layers were observed and explained by surface directed spinodal decomposition. The stable tetragonal HfO2 phase was formed upon an annealing at 1000-1100°C. The control of annealing temperature allowed the memory window to be achieved and to be tuned as well as the dielectric constant to be enhanced.

scholarly journals Comparative study of AlN dielectric films’ electrical properties for MEMS capacitive switches

2014 ◽  
Vol 130 ◽  
pp. 69-73 ◽  
Author(s):  
M. Koutsoureli ◽  
A. Adikimenakis ◽  
L. Michalas ◽  
E. Papandreou ◽  
G. Stavrinidis ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Comparative Study ◽  
Dielectric Films ◽  
Capacitive Switches

The Influence of Defects and Impurities on Electrical Properties of High-k Dielectrics

2008 ◽  
Vol 608 ◽  
pp. 55-109 ◽  
Author(s):  
Jaroslaw Dąbrowski ◽  
Seiichi Miyazaki ◽  
S. Inumiya ◽  
G. Kozłowski ◽  
G. Lippert ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Carrier Transport ◽  
Dielectric Material ◽  
Electrical Breakdown ◽  
Charge Trapping ◽  
Basic Knowledge ◽  
Dielectric Films ◽  
Low Leakage ◽  
High K ◽  
High K Dielectric

Electrical properties of thin high-k dielectric films are influenced (or even governed) by the presence of macroscopic, microscopic and atomic-size defects. For most applications, a structurally perfect dielectric material with moderate parameters would have sufficiently low leakage and sufficiently long lifetime. But defects open new paths for carrier transport, increasing the currents by orders of magnitude, causing instabilities due to charge trapping, and promoting the formation of defects responsible for electrical breakdown events and for the failure of the film. We discuss how currents flow across the gate stack and how damage is created in the material. We also illustrate the contemporary basic knowledge on hazardous defects (including certain impurities) in high-k dielectrics using the example of a family of materials based on Pr oxides. As an example of the influence of stoichiometry on the electrical pa-rameters of the dielectric, we analyze the effect of nitrogen incorporation into ultrathin Hf silicate films.

Consequences of NO Thermal Treatments in the Properties of Dielectric Films / SiC Structures

2010 ◽  
Vol 645-648 ◽  
pp. 689-692 ◽  
Author(s):  
Fernanda Chiarello Stedile ◽  
Silma Alberton Corrêa ◽  
Cláudio Radtke ◽  
Leonardo Miotti ◽  
Israel J.R. Baumvol ◽  
...  
Keyword(s):  
Nitric Oxide ◽  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
High Frequency ◽  
Interfacial Layer ◽  
Dielectric Films ◽  
Thermal Treatments ◽  
X Ray ◽  
Nitrogen Incorporation ◽  
Capacitance Voltage

The consequences of thermal treatments in nitric oxide atmospheres on the characteristics of dielectric films / SiC structures was investigated by high-frequency capacitance-voltage measurements, X-ray photoelectron spectroscopy, and X-ray reflectometry techniques. It was observed that nitrogen incorporation in dielectric films / SiC structures leads to the formation of a thinner interfacial layer that contains carbon. This fact was related to the improvement of electrical properties of those structures.

Properties of Plasma Oxynitride Films On Strained Sige

1996 ◽  
Vol 446 ◽  
Author(s):  
M. Mukhopadhyay ◽  
L.K. Bera ◽  
S.K. Ray ◽  
C.K. Maiti
Keyword(s):  
Electrical Properties ◽  
Photoelectron Spectroscopy ◽  
Charge Trapping ◽  
Dielectric Films ◽  
Oxide Interface ◽  
X Ray ◽  
Oxynitride Film ◽  
Hole Confinement ◽  
Deposited Films ◽  
Strained Sige

AbstractThe electrical properties of oxynitride films on strained SiGe grown and deposited, respectively, using a N2O and a combination of N2O and hexamethyldisilazane (HMDS) plasma are reported. X-ray photoelectron spectroscopy (XPS) analysis of the N2O grown films have shown the incorporation of N at the oxide interface without any Ge segregation. The hole confinement in accumulation in SiGe/Si heterostructure with 90 Å N2O oxynitride film has been observed by C-V measurements. Plasma reoxidation of N2O grown dielectric films has resulted in significant improvement of electrical properties. Oxynitride films deposited using PECVD of HMDS have shown comparatively inferior properties. Films deposited from a mixture of N2O and HMDS, exhibit the highest value of Dit (1x1012 cm-2eV-1), probably due to higher amount of nitrogen incorporation at the interface. The charge trapping behavior of both the grown and deposited films have been studied. The effect of addition of NH3 in HMDS plasma and N2O oxidation prior to HMDS PECVD on the charge trapping behavior has been studied.

scholarly journals Electrical Properties of Ultrathin Hf-Ti-O Higher k Gate Dielectric Films and Their Application in ETSOI MOSFET

2016 ◽  
Vol 11 (1) ◽  
Author(s):  
Yuhua Xiong ◽  
Xiaoqiang Chen ◽  
Feng Wei ◽  
Jun Du ◽  
Hongbin Zhao ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Gate Dielectric ◽  
Dielectric Films
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