BASIC PROPERTIES OF HYDROGENATED MICROCRYSTALLINE SILICON

The basic properties of international public goods are analyzed in the paper. Special attention is paid to the typology of international public goods: pure and impure, excludable and nonexcludable, club goods, regional public goods, joint products. The author argues that social construction of international public good depends on many factors, for example, government economic policy. Aggregation technologies in the supply of global public goods are examined.

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The advancement of silicon-on-insulator (SOI) devices and their basic properties

Semiconductor Physics Quantum Electronics & Optoelectronics ◽

10.15407/spqeo23.03.227 ◽

2020 ◽

Vol 23 (3) ◽

pp. 227-252

Author(s):

T.E. Rudenko ◽

◽

A.N. Nazarov ◽

V.S. Lysenko ◽

◽

...

Keyword(s):

Silicon On Insulator ◽

Basic Properties ◽

Soi Devices

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Basic Properties of an Ultrasonic Probe with a Through Hole for Puncture and Detection Principle of a Puncture Needle

IEEJ Transactions on Sensors and Micromachines ◽

10.1541/ieejsmas.132.420 ◽

2012 ◽

Vol 132 (11) ◽

pp. 420-424 ◽

Cited By ~ 1

Author(s):

Yuusuke Tanaka ◽

Katsuhiko Tanaka ◽

Susumu Sugiyama ◽

Hisanori Shiomi ◽

Yoshimasa Kurumi ◽

...

Keyword(s):

Ultrasonic Probe ◽

Basic Properties ◽

Puncture Needle ◽

Through Hole ◽

Detection Principle

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Transport Path in Hydrogenated Microcrystalline Silicon

MRS Proceedings ◽

10.1557/proc-715-a25.3 ◽

2002 ◽

Vol 715 ◽

Cited By ~ 1

Author(s):

N. Wyrsch ◽

C. Droz ◽

L. Feitknecht ◽

J. Spitznagel ◽

A. Shah

Keyword(s):

Raman Spectroscopy ◽

Volume Fraction ◽

Conductivity Measurement ◽

Dark Conductivity ◽

Transition Regime ◽

Conductivity Data ◽

Crystalline Volume Fraction ◽

Microcrystalline Silicon ◽

Crystalline Fraction ◽

Transport Path

AbstractUndoped microcrystalline silicon samples deposited in the transition regime between amorphous and microcrystalline growth have been investigated by dark conductivity measurement and Raman spectroscopy. From the latter, a semi-quantitative crystalline volume fraction Xc of the sample was deduced and correlated with dark conductivity data in order to reveal possible percolation controlled transport. No threshold was observed around the critical crystalline fraction value Xc of 33%, as reported previously, but a threshold in conductivity data was found at Xc≈50%. This threshold is interpreted here speculatively as being the result of postoxidation, and not constituting an actual percolation threshold.

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Material Structure of Microcrystalline Silicon Deposited with an Expanding Thermal Plasma

MRS Proceedings ◽

10.1557/proc-762-a.15.3 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 2

Author(s):

C. Smit ◽

D.L. Williamson ◽

M.C.M. van de Sanden ◽

R.A.C.M.M. van Swaaij

Keyword(s):

Thermal Plasma ◽

Hydrogen Plasma ◽

Plasma Chemistry ◽

Plasma Source ◽

Growth Direction ◽

Interaction Time ◽

Material Structure ◽

Average Particle ◽

Microcrystalline Silicon ◽

X Ray

AbstractExpanding thermal plasma CVD (ETP CVD) has been used to deposit thin microcrystalline silicon films. In this study we varied the position at which the silane is injected in the expanding hydrogen plasma: relatively far from the substrate and close to the plasma source, giving a long interaction time of the plasma with the silane, and close to the substrate, resulting in a short interaction time. The material structure is studied extensively. The crystalline fractions as obtained from Raman spectroscopy as well as from X-ray diffraction (XRD) vary from 0 to 67%. The average particle sizes vary from 6 to 17 nm as estimated from the (111) XRD peak using the Scherrer formula. Small angle X-ray scattering (SAXS) and flotation density measurements indicate void volume fractions of about 4 to 6%. When the samples are tilted the SAXS signal is lower than for the untilted case, indicating elongated objects parallel to the growth direction in the films. We show that the material properties are influenced by the position of silane injection in the reactor, indicating a change in the plasma chemistry.

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High Temperature n- and p-type Doped Microcrystalline Silicon Layers Grown by VHF PECVD Layer-by-Layer Deposition

MRS Proceedings ◽

10.1557/proc-762-a6.8 ◽

2003 ◽

Vol 762 ◽

Cited By ~ 7

Author(s):

A. Gordijn ◽

J.K. Rath ◽

R.E.I. Schropp

Keyword(s):

Activation Energy ◽

High Temperature ◽

High Temperatures ◽

Continuous Wave ◽

Hydrogen Plasma ◽

Silicon Layer ◽

Dark Conductivity ◽

High Deposition Rate ◽

Layer By Layer ◽

Microcrystalline Silicon

AbstractDue to the high temperatures used for high deposition rate microcrystalline (μc-Si:H) and polycrystalline silicon, there is a need for compact and temperature-stable doped layers. In this study we report on films grown by the layer-by-layer method (LbL) using VHF PECVD. Growth of an amorphous silicon layer is alternated by a hydrogen plasma treatment. In LbL, the surface reactions are separated time-wise from the nucleation in the bulk. We observed that it is possible to incorporate dopant atoms in the layer, without disturbing the nucleation. Even at high substrate temperatures (up to 400°C) doped layers can be made microcrystalline. At these temperatures, in the continuous wave case, crystallinity is hindered, which is generally attributed to the out-diffusion of hydrogen from the surface and the presence of impurities (dopants).We observe that the parameter window for the treatment time for p-layers is smaller compared to n-layers. Moreover we observe that for high temperatures, the nucleation of p-layers is more adversely affected than for n-layers. Thin, doped layers have been structurally, optically and electrically characterized. The best n-layer made at 400°C, with a thickness of only 31 nm, had an activation energy of 0.056 eV and a dark conductivity of 2.7 S/cm, while the best p-layer made at 350°C, with a thickness of 29 nm, had an activation energy of 0.11 V and a dark conductivity of 0.1 S/cm. The suitability of these high temperature n-layers has been demonstrated in an n-i-p microcrystalline silicon solar cell with an unoptimized μc-Si:H i-layer deposited at 250°C and without buffer. The Voc of the cell is 0.48 V and the fill factor is 70 %.

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