Improvement of current blocking for GaN-based LEDs by treatments of Ar plasma on p-GaN surface

2013 ◽  
pp. 261-264
Author(s):  
X Zeng ◽  
S Chang ◽  
H Lo ◽  
Shih-Chang Shei
Keyword(s):  
Ar Plasma ◽  
Current Blocking

scholarly journals Enhancement of Output Power for GaN-Based LEDs by Treatments of Ar Plasma on p-GaN Surface

2013 ◽  
Vol 2013 ◽  
pp. 1-5
Author(s):  
X. F. Zeng ◽  
S. C. Shei ◽  
H. M. Lo ◽  
S. J. Chang
Keyword(s):  
Contact Resistance ◽  
Plasma Treatment ◽  
Output Power ◽  
Current Injection ◽  
Injection Current ◽  
Reliability Test ◽  
Ar Plasma ◽  
Current Blocking ◽  
Initial Intensity

We successfully demonstrated that the Arplasmatreatment p-GaN surface increased the contact resistance of ITO/P-GaN serving as injection current deflection layer under the electrode pad. It was found that theVfvalues of the two LEDs at 20 mA were approximately 3.3 V. Under a 20 mA current injection, it was found that output powers of conventional LED and Ar-plasma-treatment LED on p-GaN surfaces were 9.8 and 11.08 mW, respectively. We can increase the output power of GaN LEDs in 13% due to current blocking on the surface of p-GaN under the electrode pad by inserting the treatment with Ar plasma. It was also found that, after the reliability test for 72 hours the half lifetimes of conventional LEDs and LEDs with Ar-plasma treatment on p-GaN surface were about 49% and 55%, corresponding to the initial intensity, respectively.

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Microwave N2–Ar plasma torch. I. Modeling

2011 ◽  
Vol 109 (2) ◽  
pp. 023301 ◽  
Author(s):  
J. Henriques ◽  
E. Tatarova ◽  
C. M. Ferreira
Keyword(s):  
Plasma Torch ◽  
Ar Plasma

High-power operation of 630 nm-band transverse-mode stabilised AlGaInP laser diodes with current-blocking region near facets

1991 ◽  
Vol 27 (8) ◽  
pp. 661 ◽  
Author(s):  
H. Hamada ◽  
M. Shono ◽  
S. Honda ◽  
R. Hiroyama ◽  
K. Matsukawa ◽  
...  
Keyword(s):  
High Power ◽  
Laser Diodes ◽  
Transverse Mode ◽  
High Power Operation ◽  
Power Operation ◽  
Current Blocking

scholarly journals Effect of cold Ar plasma treatment on the catalytic performance of Pt/CeO2 in water-gas shift reaction (WGS)

2018 ◽  
Vol 225 ◽  
pp. 121-127 ◽  
Author(s):  
Laura Pastor-Pérez ◽  
Victor Belda-Alcázar ◽  
Carlo Marini ◽  
M. Mercedes Pastor-Blas ◽  
Antonio Sepúlveda-Escribano ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Catalytic Performance ◽  
Water Gas Shift ◽  
Water Gas Shift Reaction ◽  
Ar Plasma ◽  
Shift Reaction ◽  
Water Gas

A Comparative Study of Hydrophilic Modification of Polypropylene Membranes by Remote and Direct Ar Plasma

2009 ◽  
Vol 11 (5) ◽  
pp. 576-581 ◽  
Author(s):  
Zhang Suzhen ◽  
Cheng Cheng ◽  
Lan Yan ◽  
Meng Yuedong
Keyword(s):  
Comparative Study ◽  
Hydrophilic Modification ◽  
Ar Plasma
Sign in / Sign up

Export Citation Format

Share Document