Low Current and High Frequency Miniature Switches: Microelectromechanical Systems (MEMS), Metal Contact Switches

2017 ◽  
pp. 703-730
Author(s):  
Benjamin F. Toler ◽  
Ronald A. Coutu ◽  
John W. McBride
Keyword(s):  
High Frequency ◽  
Microelectromechanical Systems ◽  
Metal Contact

Optically addressed microelectromechanical systems driven with high-frequency modulated light

2007 ◽  
Vol 46 (8) ◽  
pp. 1194
Author(s):  
Jed Khoury ◽  
Charles L. Woods ◽  
Bahareh Haji-saeed ◽  
Sandip K. Sengupta ◽  
William D. Goodhue ◽  
...  
Keyword(s):  
High Frequency ◽  
Microelectromechanical Systems ◽  
Modulated Light

scholarly journals Publisher's Note: “A large displacement, high frequency, underwater microelectromechanical systems actuator” [J. Appl. Phys. 117, 014503 (2015)]

2015 ◽  
Vol 118 (21) ◽  
pp. 219902
Author(s):  
David J. Hoelzle ◽  
Clara K. Chan ◽  
Michael B. Scott ◽  
Melinda A. Lake ◽  
Amy C. Rowat
Keyword(s):  
High Frequency ◽  
Microelectromechanical Systems ◽  
Large Displacement

Performance of MEMS Vibratory Gyroscope under Harsh Environments

2012 ◽  
Vol 2012 (DPC) ◽  
pp. 000633-000654 ◽  
Author(s):  
Chandradip Patel ◽  
Patrick McCluskey
Keyword(s):  
Temperature Effect ◽  
High Frequency ◽  
Microelectromechanical Systems ◽  
Rate Of Change ◽  
Harsh Environments ◽  
Harsh Environment ◽  
Thermal Cycles ◽  
Mems Gyroscope ◽  
Vibratory Gyroscope ◽  
Mems Gyroscopes

Microelectromechanical systems (MEMS) gyroscope is a sensor that measures the rate of change in an angular position of an object. MEMS vibratory gyroscopes are increasingly used in applications ranging from consumer electronics to aerospace and are now one of the most common MEMS products after accelerometers.With advances in fabrication technologies, the low-cost MEMS gyroscope has opened up a wide variety of applications with environmental conditions ranging from medium to harsh. Despite their widespread use, the performance of MEMS gyroscopes in harsh environments is still under question. While some studies have been conducted to understand the effects of high mechanical shock, high frequency vibration and high frequency acoustic environment on the MEMS gyroscopes,the effects of sustained exposure to temperature combined withother harsh environment stresseshave not been well researched.Thus, it is necessary to quantify MEMS vibratory gyroscope performance under such conditions.This research reviews current harsh environment studies anddemonstrates the effects of an elevated temperature and sustained exposure to temperature combined humidity on the MEMS vibratory gyroscope. In order to quantify such effects, several tests have been performed. A short-term temperature effect on MEMS gyroscope was examined through temperature characterization test forfive thermal cycles at wider temperature ranges. A long-term temperature effect on the MEMS gyroscope was inspected through 500 thermal cycles; while, combined effects of temperature and humidity was studied through temperature humidity bias(THB) test and highly accelerated stress test (HAST).

scholarly journals A large displacement, high frequency, underwater microelectromechanical systems actuator

2015 ◽  
Vol 117 (1) ◽  
pp. 014503 ◽  
Author(s):  
David J. Hoelzle ◽  
Clara K. Chan ◽  
Michael B. Scott ◽  
Melinda A. Lake ◽  
Amy C. Rowat
Keyword(s):  
High Frequency ◽  
Microelectromechanical Systems ◽  
Large Displacement

Fabrication of Low Stress PECVD-SiNx Film in High Frequency Mode

2013 ◽  
Vol 562-565 ◽  
pp. 22-27
Author(s):  
Zheng Guo Shang ◽  
Dong Ling Li ◽  
Zhi Yu Wen
Keyword(s):  
Residual Stress ◽  
High Frequency ◽  
Microelectromechanical Systems ◽  
Bulk Acoustic Wave ◽  
High Deposition Rate ◽  
Resonator Structure ◽  
Bulk Acoustic Wave Resonator ◽  
Wave Resonator ◽  
Film Bulk ◽  
Chamber Temperature

A new fabrication method to produce low residual stress PECVD SiNx layers at high frequency (13.56 MHz) was developed. High frequency up to 60W is employed in this new method to fabricate low stress SiNx. By adjusting the composition of reactant gases, process vacuum and the chamber temperature, the residual stress can be lower to-0.28 MPa, and high deposition rate up to 240 nm/min can be achieved. In addition, this paper investigated the influence of other important parameters on the results, such as pressure, power and gases flow rates. Moreover, by using the optimal process, the refractive index is ranged from 1.98 to 2.20, and the uniformity of run to run wafers is about ±3% for 4 inch wafers. Finally, a typical FBAR (film bulk acoustic wave resonator) structure using these low stress PECVD SiNx layers as solid layer and mask indicated that these layers are compatible in IC technology and suitable for using in fabricating MEMS(microelectromechanical systems) devices.

scholarly journals Analytical Approach in the Development of RF MEMS Switches

Electronics ◽  
2018 ◽  
Vol 7 (12) ◽  
pp. 415 ◽  
Author(s):  
Igor Lysenko ◽  
Alexey Tkachenko ◽  
Elena Sherova ◽  
Alexander Nikitin
Keyword(s):  
Integrated Circuits ◽  
Radio Frequency ◽  
High Frequency ◽  
High Performance ◽  
Analytical Approach ◽  
Microelectromechanical Systems ◽  
Rf Mems ◽  
Frequency Control ◽  
High Ratio ◽  
Control Circuits

Currently, the technology of microelectromechanical systems is widely used in the development of high-frequency and ultrahigh-frequency devices. The most important requirements for modern and advanced devices of the ultra-high-frequency range are the reduction of weight and size characteristics, power consumption with an increase in their functionality, operating frequency and level of integration. Radio frequency microelectromechanical switches are developed using the technology of the manufacture of CMOS-integrated circuits. Integrated radio frequency control circuits require low control voltages, the high ratio of losses to the isolation in the open and closed condition, high performance and reliability. This review is devoted to the analytical approach based on the knowledge of materials, basic performance indices and mechanisms of failure, which can be used in the development of radio-frequency microelectromechanical switches.

scholarly journals Accurate modeling of high frequency microelectromechanical systems (MEMS) switches in time- and frequency-domainc

2003 ◽  
Vol 1 ◽  
pp. 135-138 ◽  
Author(s):  
F. Coccetti ◽  
W. Dressel ◽  
P. Russer ◽  
L. Pierantoni ◽  
M. Farina ◽  
...  
Keyword(s):  
Integral Equation ◽  
High Frequency ◽  
Microelectromechanical Systems ◽  
Transmission Line Matrix ◽  
Mems Switches ◽  
Full Wave ◽  
Transverse Resonance ◽  
Planar Circuits ◽  
Tlm Method ◽  
Good Agreement

Abstract. In this contribution we present an accurate investigation of three different techniques for the modeling of complex planar circuits. The em analysis is performed by means of different electromagnetic full-wave solvers in the timedomain and in the frequency-domain. The first one is the Transmission Line Matrix (TLM) method. In the second one the TLM method is combined with the Integral Equation (IE) method. The latter is based on the Generalized Transverse Resonance Diffraction (GTRD). In order to test the methods we model different structures and compare the calculated Sparameters to measured results, with good agreement.

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