Thin-Film Transistors Fabricated on Intentionally Agglomerated, Laser-Crystallized Silicon on Insulator

2017 ◽  
pp. 129-147
Author(s):  
Themistokles Afentakis
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Silicon On Insulator

scholarly journals Coupling effect in field Hall elements based on thin-film SOI MOS transistors

2020 ◽  
Vol 6 (4) ◽  
pp. 155-158
Author(s):  
Aleksey V. Leonov ◽  
Victor N. Murashev ◽  
Dmitry N. Ivanov ◽  
V.D. Kirilov
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Coupling Effect ◽  
Silicon On Insulator ◽  
Mos Transistors ◽  
Magnetic Field Sensors ◽  
Magnetic Sensitivity ◽  
Hall Elements

The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field sensors employing the coupling effect occurring in the double gate vertical topology of these sensing elements. Electrophysical studies of FHS have been conducted for different gate bias and power supply modes. The results show that the coupling effect between the gates occurs in FHS if the thickness of the working layer between the gates is 200 nm. This effect leads to an increase in the effective carrier mobility and hence an increase in the magnetic sensitivity of the material. Thus field Hall elements based on thin-film transistors fabricated using silicon technologies provide for a substantial increase in the magnetic sensitivity of the elements and allow their application in highly reliable magnetic field sensors.

Thin-Film Transistors in CO2-Laser Crystallized Silicon Films On Fused Silica

1982 ◽  
Vol 13 ◽  
Author(s):  
N. M. Johnson ◽  
H. C. Tuan ◽  
M. D. Moyer ◽  
M. J. Thompson ◽  
D. K. Biegelsen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Fused Silica ◽  
Silicon Films ◽  
Silicon On Insulator ◽  
Bulk Glass ◽  
Crystal Silicon ◽  
Glass Substrates

ABSTRACTThin-film transistors (TFT) have been fabricated in scanned CO2 laser-crystallized silicon films on bulk fused silica. In n-channel enhancement-mode transistors, it is demonstrated that an excessively large leakage current can be electric-field modulated with a gate electrode located beneath the silicon layer. This dual-gate configuration provides direct verification on bulk glass substrates of back-channel leakage as has recently been demonstrated for beam-crystallized silicon films on thermal oxides over silicon wafers. With the application of deep-channel ion implantation to suppress back-channel leakage, high-peformance TFTs have been fabricated in single-crystal silicon films on fused silica. The results demonstrate that scanned CO 2 laser processing of silicon films on bulk glass can provide the basis for a silicon-on-insulator technology.

scholarly journals Charge-coupling effect in a Hall field element based on thin-film SOI-MOS transistor

2021 ◽  
Vol 24 (1) ◽  
pp. 57-62
Author(s):  
A. V. Leonov ◽  
V. N. Murashev ◽  
D. N. Ivanov ◽  
V. D. Kirilov
Keyword(s):  
Magnetic Field ◽  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Coupling Effect ◽  
Silicon On Insulator ◽  
Magnetic Field Sensors ◽  
Mos Transistor ◽  
Magnetic Sensitivity ◽  
Hall Elements

The influence of the coupling effect on the parameters of field Hall elements based on thin-film MOS transistors has been studied. Analysis of the development of today’s microelectronics shows the necessity of developing the element base for high performance sensors based on silicon technologies. One way to significantly improve the performance of sensing elements including magnetic field sensors is the use of thin-film transistors on the basis of silicon on insulator (SOI) structures. It has been shown that field Hall sensors (FHS) may become the basis of high-performance magnetic field sensors employing the coupling effect occurring in the double gate vertical topology of these sensing elements. Electrophysical studies of FHS have been conducted for different gate bias and power supply modes. The results show that the coupling effect between the gates occurs in FHS if the thickness of the working layer between the gates is 200 nm. This effect leads to an increase in the effective carrier mobility and hence an increase in the magnetic sensitivity of the material. Thus field Hall elements based on thin-film transistors fabricated using silicon technologies provide for a substantial increase in the magnetic sensitivity of the elements and allow their application in highly reliable magnetic field sensors.

Silicon-on-insulator approach for power IC's integrating vertical DMOS and polycrystalline silicon CMOS thin-film transistors

1992 ◽  
Vol 13 (10) ◽  
pp. 516-518 ◽  
Author(s):  
G.M. Dolny ◽  
A.C. Ipri ◽  
G.E. Nostrand ◽  
C.F. Wheatley ◽  
P.J. Wodarczyk
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Polycrystalline Silicon ◽  
Silicon On Insulator ◽  
Silicon Cmos

Effective performance improvement of organic thin film transistors with multi-layer modifications

2020 ◽  
Vol 91 (3) ◽  
pp. 30201
Author(s):  
Hang Yu ◽  
Jianlin Zhou ◽  
Yuanyuan Hao ◽  
Yao Ni
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Performance Enhancement ◽  
Organic Thin Film Transistors ◽  
Electrical Performance ◽  
Hole Injection ◽  
Organic Thin Film ◽  
Effective Performance ◽  
Significant Performance ◽  
P Type

Organic thin film transistors (OTFTs) based on dioctylbenzothienobenzothiophene (C8BTBT) and copper (Cu) electrodes were fabricated. For improving the electrical performance of the original devices, the different modifications were attempted to insert in three different positions including semiconductor/electrode interface, semiconductor bulk inside and semiconductor/insulator interface. In detail, 4,4′,4′′-tris[3-methylpheny(phenyl)amino] triphenylamine (m-MTDATA) was applied between C8BTBTand Cu electrodes as hole injection layer (HIL). Moreover, the fluorinated copper phthalo-cyanine (F16CuPc) was inserted in C8BTBT/SiO2 interface to form F16CuPc/C8BTBT heterojunction or C8BTBT bulk to form C8BTBT/F16CuPc/C8BTBT sandwich configuration. Our experiment shows that, the sandwich structured OTFTs have a significant performance enhancement when appropriate thickness modification is chosen, comparing with original C8BTBT devices. Then, even the low work function metal Cu was applied, a normal p-type operate-mode C8BTBT-OTFT with mobility as high as 2.56 cm2/Vs has been fabricated.

A Proposal of High Performance Organic Thin Film Transistors

2010 ◽  
Vol 130 (2) ◽  
pp. 161-166
Author(s):  
Yoshinori Ishikawa ◽  
Yasuo Wada ◽  
Toru Toyabe ◽  
Ken Tsutsui
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Performance ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film

High Sensitivity pH Sensors based on Amorphous Indium-gallium-zinc Oxide Thin-film Transistors

2015 ◽  
Vol 135 (6) ◽  
pp. 192-198 ◽  
Author(s):  
Shinnosuke Iwamatsu ◽  
Yutaka Abe ◽  
Toru Yahagi ◽  
Seiya Kobayashi ◽  
Kazushige Takechi ◽  
...  
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
High Sensitivity ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Ph Sensors ◽  
Zinc Oxide Thin Film ◽  
Indium Gallium

Effect of Illumination on Organic Polymer Thin-Film Transistors

2003 ◽  
Vol 771 ◽  
Author(s):  
Michael C. Hamilton ◽  
Sandrine Martin ◽  
Jerzy Kanicki
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Drain Current ◽  
Charge Carriers ◽  
Electrical Performance ◽  
Organic Polymer ◽  
Light Illumination ◽  
Polymer Thin Film ◽  
Channel Region ◽  
White Light Illumination

AbstractWe have investigated the effects of white-light illumination on the electrical performance of organic polymer thin-film transistors (OP-TFTs). The OFF-state drain current is significantly increased, while the drain current in the strong accumulation regime is relatively unaffected. At the same time, the threshold voltage is decreased and the subthreshold slope is increased, while the field-effect mobility of the charge carriers is not affected. The observed effects are explained in terms of the photogeneration of free charge carriers in the channel region due to the absorbed photons.

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