Monolithic Integration of Carbon Nanotubes and CMOS

2017 ◽  
pp. 131-167
Author(s):  
Huikai Xie ◽  
Ying Zhou ◽  
Jason Johnson ◽  
Ant Ural
Keyword(s):  
Carbon Nanotubes ◽  
Monolithic Integration

Monolithic Integration of CMOS VLSI and Carbon Nanotubes for Hybrid Nanotechnology Applications

2008 ◽  
Vol 7 (5) ◽  
pp. 636-639 ◽  
Author(s):  
D. Akinwande ◽  
S. Yasuda ◽  
B. Paul ◽  
S. Fujita ◽  
G. Close ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Monolithic Integration ◽  
Cmos Vlsi ◽  
Hybrid Nanotechnology

Monolithic Integration of Arrays of Single-Walled Carbon Nanotubes and Sheets of Graphene

2011 ◽  
pp. n/a-n/a ◽  
Author(s):  
Suck Won Hong ◽  
Frank Du ◽  
Wei Lan ◽  
Sangmin Kim ◽  
Hoon-Sik Kim ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Single Walled Carbon Nanotubes ◽  
Monolithic Integration ◽  
Single Walled Carbon ◽  
Walled Carbon Nanotubes

Monolithic Integration of Carbon Nanotubes

2012 ◽  
pp. 1467-1467
Author(s):  
Gabriela Juarez-Martinez ◽  
Alessandro Chiolerio ◽  
Paolo Allia ◽  
Martino Poggio ◽  
Christian L. Degen ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Monolithic Integration

Structural phenomena in the growth of carbon nanotubes

1993 ◽  
Vol 51 ◽  
pp. 750-751
Author(s):  
Jun Jiao
Keyword(s):  
Carbon Nanotubes ◽  
Growth Mechanism ◽  
Carbonaceous Material ◽  
Cluster Growth ◽  
Structural Elements ◽  
Rich Variety ◽  
Different Shapes ◽  
Point To Point

HREM studies of the carbonaceous material deposited on the cathode of a Huffman-Krätschmer arc reactor have shown a rich variety of multiple-walled nano-clusters of different shapes and forms. The preparation of the samples, as well as the variety of cluster shapes, including triangular, rhombohedral and pentagonal projections, are described elsewhere.The close registry imposed on the nanotubes, focuses attention on the cluster growth mechanism. The strict parallelism in the graphitic separation of the tube walls is maintained through changes of form and size, often leading to 180° turns, and accommodating neighboring clusters and defects. Iijima et. al. have proposed a growth scheme in terms of pentagonal and heptagonal defects and their combinations in a hexagonal graphitic matrix, the first bending the surface inward, and the second outward. We report here HREM observations that support Iijima’s suggestions, and add some new features that refine the interpretation of the growth mechanism. The structural elements of our observations are briefly summarized in the following four micrographs, taken in a Hitachi H-8100 TEM operating at an accelerating voltage of 200 kV and with a point-to-point resolution of 0.20 nm.

Sign in / Sign up

Export Citation Format

Share Document