An Integrated Wafer Surface Evolution Model for Chemical Mechanical Planarization (CMP) .................................................................................... Micayla Haugen

2016 ◽  
pp. 391-419
Keyword(s):  
Chemical Mechanical Planarization ◽  
Evolution Model ◽  
Wafer Surface ◽  
Surface Evolution

Yield Improvement via minimization of step height non-uniformity in Chemical Mechanical Planarization (CMP)

2005 ◽  
Vol 867 ◽  
Author(s):  
Muthukkumar Kadavasal ◽  
Sutee Eamkajornsiri ◽  
Abhijit Chandra ◽  
Ashraf F. Bastawros
Keyword(s):  
Chemical Mechanical Planarization ◽  
Open Loop ◽  
Step Height ◽  
Control Algorithms ◽  
Open Loop Control ◽  
Time Step ◽  
Surface Evolution ◽  
Loop Control ◽  
Final Surface ◽  
Pattern Density

AbstractObtaining local and global planarity is one of the prime criteria in dielectric and metal planarizations. Although Chemical Mechanical Planarization (CMP) helps us achieve this criterion in constant pattern density surfaces, the same is not true for variable pattern density surfaces this results in formation of global step heights across the die. This paper provides a pressure open loop control algorithms for obtaining planarity across a die containing variations in pattern densities. Based on the variation of pattern density and surface heights across the die, the surfaces are separated into zones and the pressure is varied spatially and/or temporally to obtain uniform surface heights, with enhanced step height uniformity. One of the algorithms looks ahead and recalculates/modifies the pressure values by identifying the step heights that could be formed after a specified time step. The final surface predictions have improved uniformity on the upper surface as well as on the step heights across the entire die. The simulation would help us track the polishing process for each time step and guide us with the optimized pressure values that can be applied in order to an uniform final surface evolution.

Effect of Various Cleaning Solutions and Brush Scrubber Kinematics on the Frictional Attributes of Post Copper CMP Cleaning Process

2009 ◽  
Vol 145-146 ◽  
pp. 363-366 ◽  
Author(s):  
Yasa Sampurno ◽  
Yun Zhuang ◽  
Xun Gu ◽  
Sian Theng ◽  
Takenao Nemoto ◽  
...  
Keyword(s):  
Vinyl Alcohol ◽  
Direct Contact ◽  
Chemical Mechanical Planarization ◽  
Wafer Surface ◽  
Poly Vinyl Alcohol ◽  
Particle Removal ◽  
Cleaning Process ◽  
Cleaning Performance ◽  
Cleaning Solution ◽  
Copper Cmp

Brush scrubbing has been widely used in post chemical mechanical planarization (CMP) applications to remove contaminations, such as slurry residues and particles, from the wafer surface. During brush scrubbing, particle removal results from direct contact between a soft poly vinyl alcohol (PVA) brush and the wafer surface in which the brush asperities engulf the particles while the rotating motion of the brush, as well as the cleaning fluid at the surface, dislodge and carry the particles away from the wafer. The cleaning performance of brush scrubbing depends heavily on the choice of the cleaning solution and brush scrubber kinematics. In this work, the effect of various cleaning solutions and brush scrubber kinematics on the frictional attributes of post copper CMP cleaning process was investigated.

An Analytical Dishing and Step Height Reduction Model for Chemical Mechanical Planarization (CMP)

2002 ◽  
Author(s):  
Guanghui Fu ◽  
Abhijit Chandra
Keyword(s):  
Chemical Mechanical Planarization ◽  
Design Tool ◽  
Step Height ◽  
Wafer Surface ◽  
Surface Geometry ◽  
Height Reduction ◽  
Proposed Model ◽  
Model Predictions ◽  
Feature Scale ◽  
Good Agreement

An analytical model for dishing and step height reduction in chemical mechanical planarization (CMP) of copper is presented. The model is based on the assumption that at the feature scale, high areas on the wafer experience higher pressure than low areas. The slurry is assumed to be Prestonian. The model delineates how dishing and step height reduction depend on slurry properties (selectivity and Preston’s constants), pad characteristics (stiffness and bending ability), polishing conditions (pressure, relative velocity and overpolishing) and wafer surface geometry (linewidth, pitch and pattern density). Model predictions are in good agreement with existing experimental observations. The present model facilitates understanding of the CMP process at the feature scale. Based on the proposed model, design avenues for decreasing dishing and increasing the speed of step height reduction may be explored through modification of appropriate parameters for slurry, pad and polishing conditions. The proposed model may also be used as a design tool for pattern layout to optimize the performance of the CMP process.

Surface Evolution during the Chemical Mechanical Planarization of Copper

CIRP Annals ◽  
2006 ◽  
Vol 55 (1) ◽  
pp. 605-608 ◽  
Author(s):  
W. Che ◽  
A. Bastawros ◽  
A. Chandra ◽  
P.M. Lonardo
Keyword(s):  
Chemical Mechanical Planarization ◽  
Surface Evolution

scholarly journals Role of Slurry Additives on Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica Based Slurry

2021 ◽  
Author(s):  
Yue Li ◽  
chenwei wang ◽  
Jianwei Zhou ◽  
Yuanshen Cheng ◽  
晨 续 ◽  
...  
Keyword(s):  
Surface Roughness ◽  
Silicon Dioxide ◽  
Colloidal Silica ◽  
Semiconductor Device ◽  
Removal Rate ◽  
Chemical Mechanical Planarization ◽  
Image Sensor ◽  
Wafer Surface ◽  
Silicon Dioxide Film ◽  
Dioxide Film

Abstract Chemical mechanical planarization (CMP) is a critical process for smoothing and polishing the surfaces of various material layers in semiconductor device fabrication. The applications of silicon dioxide films are shallow trench isolation, an inter-layer dielectric, and emerging technologies such as CMOS Image Sensor. In this study, the effect of various chemical additives on the removal rate of silicon dioxide film using colloidal silica abrasive during CMP was investigated. The polishing results show that the removal rate of silicon dioxide film first increased and then decreased with an increasing concentration of K+, pH, and abrasive size. The removal rate of silicon dioxide film increased linearly as the abrasive concentration increased. The influence mechanisms of various additives on the removal rate of silicon dioxide film were investigated by constructing simple models and scanning electron microscopy. Further, the stable performance of the slurry was achieved due to the COO- chains generated by poly(acrylamide) hydrolysis weaken the attraction between abrasives. High-quality wafer surfaces with low surface roughness were also thus achieved. The desirable and simple ingredient slurry investigated in this study can effectively enhance the planarization performance, for example, material removal rates and wafer surface roughness.

scholarly journals eSCAPE: Regional to Global Scale Landscape Evolution Model v2.0

2019 ◽  
Author(s):  
Tristan Salles
Keyword(s):  
Landscape Evolution ◽  
Iterative Algorithms ◽  
Sedimentary Basins ◽  
Global Scale ◽  
Evolution Model ◽  
Mathematical Representation ◽  
Stream Power ◽  
Geological Time ◽  
Surface Evolution ◽  
Source To Sink

Abstract. eSCAPE is a Python-based landscape evolution model that simulates over geological time (1) the dynamic of the landscape, (2) the transport of sediment from source to sink, and (3) continental and marine sedimentary basins formation under different climatic and tectonic conditions. eSCAPE is open-source, cross-platform, distributed under the GPLv3 license and available on GitHub (escape-model.github.io). Simulated processes rely on a simplified mathematical representation of landscape processes – the stream power and creep laws – to compute Earth's surface evolution by rivers and hillslope transport. The main difference with previous models is in the underlying numerical formulation of the mathematical equations. The approach is based on a series of implicit iterative algorithms defined in matrix form to calculate both drainage area from multiple flow directions and erosion/deposition processes. eSCAPE relies on PETSc parallel library to solve these matrix systems. Along with the description of the algorithms, examples are provided and illustrate the model current capabilities and limitations. eSCAPE is the first landscape evolution model able to simulate processes at global scale and is primarily designed to address problems on large unstructured grids (several millions of nodes).

Two-Step Planarization of ECMP and CMP for MEMS Copper Patterns

2008 ◽  
Vol 569 ◽  
pp. 117-120
Author(s):  
Suk Hoon Jeong ◽  
Suk Bae Joo ◽  
Ho Jun Lee ◽  
Boum Young Park ◽  
Hyoung Jae Kim ◽  
...  
Keyword(s):  
High Pressure ◽  
Metal Layer ◽  
Chemical Mechanical Planarization ◽  
Low Pressure ◽  
Chemical Effect ◽  
Wafer Surface ◽  
Process Time ◽  
Step Process ◽  
Planarization Process ◽  
Cu Cmp

Chemical mechanical polishing (CMP) has been used as planarization process in the fabrication of semiconductor devices. The CMP process is required to planarize the overburden film in an interconnect process by high relative velocity between head and platen, high pressure of head and chemical effects of an aqueous slurry. But, a variety of defects such as dishing, delamination and metal layer peering are caused by CMP factors such as high pressure, pad bending and strong chemical effect. The electrical energy of the electro-chemical mechanical planarization (ECMP) dissolves copper (Cu) solid into copper ions electrochemically in an aqueous electrolyte. The dissolved copper complex layer or passivation layer is removed by the mechanical abrasions of polishing pad and abrasive. Therefore the ECMP process realizes low pressure processing of soft metals to reduce defects comparing to traditional CMP process. But, if projected metal patterns were removed and not remained on whole wafer surface in final processing stage, Cu layer could not be removed by ECMP process. The two-step process consists of the ECMP and the conventional CMP used in micro patterned Cu wafers. First, the ECMP process removed several tens 'm of bulk copper on Cu patterned wafer within shorter process time than the Cu CMP. Next, residual Cu layer was completely removed by the Cu CMP under low pressure. Total time and process defects are extremely reduced by the two-step process.

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