CMOS-Compatible Silicon-on-Insulator MESFETs for Extreme Environments

2017 ◽  
pp. 253-261 ◽  
Keyword(s):  
Extreme Environments ◽  
Silicon On Insulator ◽  
Cmos Compatible

Multiple System Configurations in a 32-bit Extreme Environment

2012 ◽  
Vol 2012 (HITEC) ◽  
pp. 000301-000306 ◽  
Author(s):  
Michael C. Brown
Keyword(s):  
Error Detection ◽  
Extreme Environments ◽  
Extreme Environment ◽  
Silicon On Insulator ◽  
Cmos Process ◽  
System A ◽  
External Sources ◽  
System Configurations ◽  
Simple Systems ◽  
Computational Systems

Full computational systems are needed at extreme environments (to 300°C) to increase functionality and reduce cost in the ever advancing oil/gas, geothermal, aeronautic, and automotive industries. Commercially available electronic components are not available to build a reliable system. A single microcontroller device can be used in systems of varying complexity, from small, mid, large, and multiprocessor scale. The 32-bit microcontroller will use a low power silicon-on-insulator CMOS process to increase long term reliability. Communication ports are provided to allow for simple systems with a single processor to complex multiprocessor systems with multiple controlled devices and external memory. As no adequate non-volatile solution is available for extreme conditions, multiple boot options are available to load instructions from external sources. Fault tolerance should be provided by system error detection. Battery backup must be provided for program and data retention. The resulting microcontroller will allow a wide variety of extreme environment systems, from simple to complex.

Silicon Carbide Functional Primitives for Wireless Sensor Nodes

2015 ◽  
Vol 2015 (HiTEN) ◽  
pp. 000244-000250 ◽  
Author(s):  
A.B. Horsfall ◽  
H.K. Chan ◽  
K.V. Vassilevski ◽  
N.G. Wood ◽  
N.G. Wright
Keyword(s):  
Silicon Carbide ◽  
Power Level ◽  
Extreme Environments ◽  
Silicon On Insulator ◽  
Sensor Nodes ◽  
Wireless Sensor ◽  
Wireless Sensor Node ◽  
Colpitts Oscillator ◽  
Wireless Sensor Nodes ◽  
Wide Range

While wireless sensor nodes based on conventional semiconductor technology have revolutionized our understanding of the world in which we live, they are limited to operating in benign environments. This limitation precludes their use in a wide range of industrial, automotive and geological applications, where the required operating temperatures can exceed 200°C. Silicon-on-insulator technology has enabled the development of high temperature electronics, however applications requiring higher temperature operation are becoming apparent. Battery technologies capable of sustaining the required power level in these extreme environments are also a significant challenge. In this work, we present the integration of analog functional primitive circuits capable of interrogating resistive and capacitive sensors to form a wireless sensor node based on silicon carbide technology. The electrical power is provided from the output of a novel self-starting boost converter connected to a thermoelectric generator. Data can be transmitted from the node via frequency modulation of a Colpitts oscillator, for remote post processing. The signal conditioning is realised using JFET based amplifier circuits, designed using a novel JFET compact model, which enables a greater level of confidence than existing models in the literature.

Complementary JFET Logic for Low-Power Applications in Extreme Environments

2013 ◽  
Vol 740-742 ◽  
pp. 1052-1055
Author(s):  
H. Habib ◽  
N.G. Wright ◽  
A.B. Horsfall
Keyword(s):  
Power Dissipation ◽  
Room Temperature ◽  
Supply Voltage ◽  
Extreme Environments ◽  
Building Blocks ◽  
Silicon On Insulator ◽  
Complex Structures ◽  
Noise Margin ◽  
Static Power ◽  
Logic Functions

The static and dynamic characteristics of Complementary JFET (CJFET) logic inverter are studied across a range of temperatures and supply voltages to assess potential improvements in performance of digital logic functions for operation in extreme environments. The logic inverter is truly the core of all digital designs. The design and analysis of inverter enables the design of more complex structures, such as NAND, NOR and XOR gates. These complex structures in turn form the building blocks for modules, such as adders, multipliers and microprocessors. At 500 deg C and operating at a supply voltage of 1 V, the CJFET inverter have noise margin comparable to that of room temperature silicon and silicon on insulator CMOS inverters. Furthermore, the static power dissipation by CJFET inverter at 500 deg C is 20.6 nW which is six orders of magnitude lower than that by current SiC technologies, making CJFET technology ideal for achieving complex logic functions, far greater than a few-transistors ICs, in the nearer term.

scholarly journals PR_26 Coupled Microring Resonators: Towards Overcoming Disorder Effects

2022 ◽  
Author(s):  
Shayan Mookherjee
Keyword(s):  
Emerging Technologies ◽  
Silicon On Insulator ◽  
Microring Resonators ◽  
Disorder Effects ◽  
Cmos Compatible

Extended abstract of an invited presentation at the CMOS Emerging Technologies Conference. Long CROWs are experimentally realized which consist of hundreds of coupled silicon microring racetrack resonators fabricated using CMOS-compatible fabrication on silicon-on-insulator (SOI) wafers.

Footprint Analysis of CMOS Compatible Silicon-on-Insulator based Photonic Waveguides

2020 ◽  
Vol 12 ◽  
Author(s):  
Veer Chandra ◽  
Rakesh Ranjan
Keyword(s):  
Silicon On Insulator ◽  
Propagation Loss ◽  
Comsol Multiphysics ◽  
The Finite Element Method ◽  
Propagation Length ◽  
Footprint Analysis ◽  
Photonic Waveguides ◽  
Cmos Compatible ◽  
The Impact ◽  
Slot Waveguides

Aim: Establish the efficient footprint size, i.e., the total substrate width of photonic waveguides (Ridge, Rib, and Slot) under the fundamental mode propagation constraints. Objective: By varying the total substrate width for all photonic waveguides (Ridge, Rib, and Slot) with respect to four major waveguide parameters, namely effective refractive index, propagation loss, propagation length, and confinement percentage, the converged values of these waveguide parameters have to be obtained. Methods: The finite element method (FEM) based simulations, using the COMSOL Multiphysics, have been used to study the modal characteristics of photonic waveguides to achieve their efficient footprint size. Results: The total substrate widths have been obtained for the all four parameters and considering the impact of all these waveguide parameters simultaneously, the efficient total substrate width have been recognized as 2500 nm, 4000 nm, and 3000 nm, respectively for Ridge, Rib, and Slot waveguides. Conclusion: The efficient waveguide footprints, i.e., the total substrate widths for the three photonic waveguides, namely Ridge, Rib and Slot waveguides have been established.

Harsh Environment Pressure Transducers Employing Metal Diaphragms and Silicon on Insulator Sensing Networks for Gas Turbine Application

2008 ◽  
Author(s):  
Anthony D. Kurtz ◽  
Boaz Kochman ◽  
Alex A. Ned
Keyword(s):  
Gas Turbine ◽  
Elevated Temperatures ◽  
Dynamic Pressure ◽  
Dynamic Performance ◽  
Extreme Environments ◽  
Silicon On Insulator ◽  
Turbine Engines ◽  
Pressure Transducers ◽  
Piezoresistive Sensor ◽  
Metal Diaphragm

It has long been necessary in many applications to measure pressure in extremely harsh environments at elevated temperatures. Examples of such applications include: gas turbine engines (both ground-based and for aircraft), automotive combustion, and down-hole applications for gas and oil industry. This paper reports on the latest developments of metal diaphragm transducers with Silicon-On-Insulator (SOI) piezoresistive sensor networks for ultra extreme environments. The design of the latest Inconel-diaphragm miniature, dynamic pressure transducers capable of operating reliably under extreme environmental conditions (temperatures up to 500°C and accelerations greater than 200g) — is described in detail. The performance of such metal diaphragm pressure transducers is presented and indicates that ruggedized, piezoresistive transducers with excellent static and dynamic performance characteristics are capable of operation in extremely harsh, high temperature gas turbine environments.

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