Ab Initio-Based Band Engineering and Rational Design of Thermoelectric Materials

Author(s):  
Jiong Yang ◽  
Xun Shi ◽  
Wenqing Zhang ◽  
Lidong Chen ◽  
Jihui Yang
2016 ◽  
Vol 2 (2) ◽  
pp. 114-130 ◽  
Author(s):  
Lili Xi ◽  
Jiong Yang ◽  
Lihua Wu ◽  
Jihui Yang ◽  
Wenqing Zhang

Author(s):  
Shuping Guo ◽  
Shashwat Anand ◽  
Madison K. Brod ◽  
Yongsheng Zhang ◽  
G. Jeffrey Snyder

Semiconducting half-Heusler (HH, XYZ) phases are promising thermoelectric materials owing to their versatile electronic properties. Because the valence band of half-Heusler phases benefits from the valence band extrema at several...


2020 ◽  
Vol 8 (31) ◽  
pp. 15760-15766 ◽  
Author(s):  
Udara Saparamadu ◽  
Xiaojian Tan ◽  
Jifeng Sun ◽  
Zhensong Ren ◽  
Shaowei Song ◽  
...  

P-type SmMg2Bi2, a new member of Bi-based 1-2-2 Zintl family, has been investigated and demonstrated to be a promising material for application in TE power generation.


RSC Advances ◽  
2015 ◽  
Vol 5 (36) ◽  
pp. 28460-28466 ◽  
Author(s):  
M. Faraji ◽  
M. Sabzali ◽  
S. Yousefzadeh ◽  
N. Sarikhani ◽  
A. Ziashahabi ◽  
...  

The composition dependent electronic properties of the Mo1−xWxS2monolayer deposited over a TiO2(110) substrate were investigated based onab initiodensity functional calculations by applying periodic boundary conditions.


2010 ◽  
Vol 16 (34) ◽  
pp. 10348-10356 ◽  
Author(s):  
Danil N. Dybtsev ◽  
Maxim P. Yutkin ◽  
Denis G. Samsonenko ◽  
Vladimir P. Fedin ◽  
Alexey L. Nuzhdin ◽  
...  

2015 ◽  
Vol 8 (1) ◽  
pp. 216-220 ◽  
Author(s):  
Chenguang Fu ◽  
Tiejun Zhu ◽  
Yintu Liu ◽  
Hanhui Xie ◽  
Xinbing Zhao

High performance p-type half-Heusler compounds FeNb1−xTixSb are developed via a band engineering approach and a record zT of 1.1 is achieved.


2012 ◽  
Vol 24 (46) ◽  
pp. 6124-6124 ◽  
Author(s):  
Yanzhong Pei ◽  
Heng Wang ◽  
G. J. Snyder

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