Thermoelectric Materials: Band Engineering of Thermoelectric Materials (Adv. Mater. 46/2012)

2012 ◽  
Vol 24 (46) ◽  
pp. 6124-6124 ◽  
Author(s):  
Yanzhong Pei ◽  
Heng Wang ◽  
G. J. Snyder
Keyword(s):  
Thermoelectric Materials ◽  
Band Engineering

scholarly journals Conduction Band Engineering of Half-Heusler Thermoelectrics Using Orbital Chemistry

2022 ◽  
Author(s):  
Shuping Guo ◽  
Shashwat Anand ◽  
Madison K. Brod ◽  
Yongsheng Zhang ◽  
G. Jeffrey Snyder
Keyword(s):  
Electronic Properties ◽  
Valence Band ◽  
Conduction Band ◽  
Thermoelectric Materials ◽  
Band Engineering

Semiconducting half-Heusler (HH, XYZ) phases are promising thermoelectric materials owing to their versatile electronic properties. Because the valence band of half-Heusler phases benefits from the valence band extrema at several...

Achieving high-performance p-type SmMg2Bi2 thermoelectric materials through band engineering and alloying effects

2020 ◽  
Vol 8 (31) ◽  
pp. 15760-15766 ◽  
Author(s):  
Udara Saparamadu ◽  
Xiaojian Tan ◽  
Jifeng Sun ◽  
Zhensong Ren ◽  
Shaowei Song ◽  
...  
Keyword(s):  
Power Generation ◽  
Thermoelectric Materials ◽  
High Performance ◽  
Promising Material ◽  
Band Engineering ◽  
P Type ◽  
Alloying Effects

P-type SmMg2Bi2, a new member of Bi-based 1-2-2 Zintl family, has been investigated and demonstrated to be a promising material for application in TE power generation.

scholarly journals Band engineering and rational design of high-performance thermoelectric materials by first-principles

2016 ◽  
Vol 2 (2) ◽  
pp. 114-130 ◽  
Author(s):  
Lili Xi ◽  
Jiong Yang ◽  
Lihua Wu ◽  
Jihui Yang ◽  
Wenqing Zhang
Keyword(s):  
Thermoelectric Materials ◽  
First Principles ◽  
High Performance ◽  
Rational Design ◽  
Band Engineering

Band engineering of high performance p-type FeNbSb based half-Heusler thermoelectric materials for figure of merit zT > 1

2015 ◽  
Vol 8 (1) ◽  
pp. 216-220 ◽  
Author(s):  
Chenguang Fu ◽  
Tiejun Zhu ◽  
Yintu Liu ◽  
Hanhui Xie ◽  
Xinbing Zhao
Keyword(s):  
Thermoelectric Materials ◽  
High Performance ◽  
Figure Of Merit ◽  
Heusler Compounds ◽  
Band Engineering ◽  
Engineering Approach ◽  
P Type

High performance p-type half-Heusler compounds FeNb1−xTixSb are developed via a band engineering approach and a record zT of 1.1 is achieved.

scholarly journals An Update Review on N-Type Layered Oxyselenide Thermoelectric Materials

Materials ◽  
2021 ◽  
Vol 14 (14) ◽  
pp. 3905
Author(s):  
Junqing Zheng ◽  
Dongyang Wang ◽  
Li-Dong Zhao
Keyword(s):  
Thermal Stability ◽  
Transport Properties ◽  
Thermoelectric Materials ◽  
Lower Cost ◽  
Short Review ◽  
Microstructure Design ◽  
Research Directions ◽  
Band Engineering ◽  
New Type ◽  
Halogen Doping

Compared with traditional thermoelectric materials, layered oxyselenide thermoelectric materials consist of nontoxic and lower-cost elements and have better chemical and thermal stability. Recently, several studies on n-type layered oxyselenide thermoelectric materials, including BiCuSeO, Bi2O2Se and Bi6Cu2Se4O6, were reported, which stimulates us to comprehensively summarize these researches. In this short review, we begin with various attempts to realize an n-type BiCuSeO system. Then, we summarize several methods to optimize the thermoelectric performance of Bi2O2Se, including carrier engineering, band engineering, microstructure design, et al. Next, we introduce a new type of layered oxyselenide Bi6Cu2Se4O6, and n-type transport properties can be obtained through halogen doping. At last, we propose some possible research directions for n-type layered oxyselenide thermoelectric materials.

ChemInform Abstract: Band Engineering of Thermoelectric Materials

ChemInform ◽  
2013 ◽  
Vol 44 (8) ◽  
pp. no-no
Author(s):  
Yanzhong Pei ◽  
Heng Wang ◽  
G. J. Snyder
Keyword(s):  
Thermoelectric Materials ◽  
Band Engineering

scholarly journals Computationally Modelling the Use of Nanotechnology to Enhance the Performance of Thermoelectric Materials

Energies ◽  
2020 ◽  
Vol 13 (19) ◽  
pp. 5096
Author(s):  
Peter Spriggs ◽  
Qing Wang
Keyword(s):  
High Temperature ◽  
Thermoelectric Materials ◽  
Phonon Scattering ◽  
Waste Heat ◽  
Global Climate ◽  
Computational Simulation ◽  
Electrical Energy ◽  
Maximum Efficiency ◽  
Temperature Range ◽  
Band Engineering

The increased focus on global climate change has meant that the thermoelectric market has received considerably more attention. There are many processes producing large amounts of waste heat that can be utilised to generate electrical energy. Thermoelectric devices have long suffered with low efficiencies, but this can be addressed in principle by improving the performance of the thermoelectric materials these devices are manufactured with. This paper investigates the thermoelectric performance of market standard thermoelectric materials before analysing how this performance can be improved through the adoption of various nanotechnology techniques. This analysis is carried out through the computational simulation of the materials over low-, mid- and high-temperature ranges. In the low-temperature range, through the use of nanopores and full frequency phonon scattering, Mg0.97Zn0.03Ag0.9Sb0.95 performed best with a ZT value of 1.45 at 433 K. Across the mid-temperature range a potentially industry leading ZT value of 2.08 was reached by AgSbTe1.85Se0.15. This was carried out by simulating the effect of band engineering and the introduction of dense stacking faults due to the addition of Se into AgSbTe2. AgSbTe1.85Se0.15 cannot be implemented in devices operating above 673 K because it degrades too quickly. Therefore, for the top 200 K of the mid-temperature range a PbBi0.002Te–15% Ag2Te nanocomposite performed best with a maximum ZT of 2.04 at 753 K and maximum efficiency of 23.27 at 813 K. In the high-temperature range, through the doping of hafnium (Hf) the nanostructured FeNb0.88Hf0.12Sb recorded the highest ZT value of 1.49 at 1273 K. This was closely followed by Fe1.05Nb0.75Ti0.25Sb, which recorded a ZT value of 1.31 at 1133 K. This makes Fe1.05Nb0.75Ti0.25Sb an attractive substitute for FeNb0.88Hf0.12Sb due to the much lower cost and far greater abundance of titanium (Ti) compared with hafnium.

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