Luminescence Studies of Impurities and Defects in III-Nitride Semiconductors

2016 ◽  
pp. 181-202
Keyword(s):  
Nitride Semiconductors ◽  
Impurities And Defects

Optical properties of defects in nitride semiconductors

2015 ◽  
Vol 30 (20) ◽  
pp. 2977-2990 ◽  
Author(s):  
Ingo Tischer ◽  
Matthias Hocker ◽  
Benjamin Neuschl ◽  
Manfred Madel ◽  
Martin Feneberg ◽  
...  
Keyword(s):  
Optical Properties ◽  
Nitride Semiconductors ◽  
Image Position

Abstract

Iodine Modified Carbon Nitride Semiconductors as Visible Light Photocatalysts for Hydrogen Evolution

2013 ◽  
Vol 26 (5) ◽  
pp. 805-809 ◽  
Author(s):  
Guigang Zhang ◽  
Mingwen Zhang ◽  
Xinxin Ye ◽  
Xiaoqing Qiu ◽  
Sen Lin ◽  
...  
Keyword(s):  
Visible Light ◽  
Hydrogen Evolution ◽  
Carbon Nitride ◽  
Nitride Semiconductors

scholarly journals Ammonothermal Synthesis of Earth-Abundant Nitride Semiconductors ZnSiN2 and ZnGeN2 and Dissolution Monitoring by In Situ X-ray Imaging

2017 ◽  
Vol 23 (50) ◽  
pp. 12275-12282 ◽  
Author(s):  
Jonas Häusler ◽  
Saskia Schimmel ◽  
Peter Wellmann ◽  
Wolfgang Schnick
Keyword(s):  
Nitride Semiconductors ◽  
X Ray ◽  
X Ray Imaging ◽  
Earth Abundant

Electrical and optical characterization of Er‐implanted Si: The role of impurities and defects

1993 ◽  
Vol 74 (8) ◽  
pp. 4936-4942 ◽  
Author(s):  
F. Priolo ◽  
S. Coffa ◽  
G. Franzò ◽  
C. Spinella ◽  
A. Carnera ◽  
...  
Keyword(s):  
Optical Characterization ◽  
Impurities And Defects

Optical Activity of Yb3+ in MeV Ion-Implanted InP.

1993 ◽  
Vol 301 ◽  
Author(s):  
S. Uekusa ◽  
A. Majima ◽  
H. Katsumata ◽  
Y. Noyori ◽  
M. Kumagai
Keyword(s):  
Band Gap ◽  
Photon Energy ◽  
Luminescence Intensity ◽  
Annealing Temperature ◽  
Rare Earth Ions ◽  
Excitation Wavelength ◽  
Photoluminescence Excitation ◽  
Efficient Energy Transfer ◽  
Transfer Processes ◽  
Impurities And Defects

ABSTRACTFor the evaluation of an implanted layer, photoluminescence (PL) and photoluminescence excitation (PLE) measurements, which are nondestructive and sensitive methods for identifying impurities and defects, were performed. Yb3+ -related sharp luminescence was observed at a wavelength of 1002nm, due to the transitions which occurred between the spin-orbit levels 2F5/2→2F7/2 of Yb3+ (4f13). Most efficient luminescence of Yb3+ was achieved at an excitation wavelength of around 880nm. The luminescence intensity of this peak (Yb3+) decreased with an increase in annealing temperature. Since the peak has not been observed for good samples in crystallinity, it may indicate that new, efficient energy transfer processes to rare-earth ions occur through the defect energy level. Especially, for the sample annealed at 600°C, Yb-related luminescence intensity excited by the photon energy below the band gap is about 3 times larger than that of excited by the photon energy above the band gap.

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