ZnO Thin-Film and Nanowire-Based Sensor Applications

Author(s):  
Y Heo ◽  
S Pearton ◽  
D Norton ◽  
F Ren
2011 ◽  
Vol 364 ◽  
pp. 1-6 ◽  
Author(s):  
Mohamad Hafiz Mamat ◽  
Syafinaz Wan Anwar Wan ◽  
Mohamed Zahidi Musa ◽  
Zuraida Khusaimi ◽  
Mohd Firdaus Malek ◽  
...  

Nanostructured zinc oxide (ZnO) thin films were deposited on glass substrates using radio frequency (RF) magnetron sputtering system at different oxygen flow rates ranges between 0 to 40 sccm. Field emission scanning electron microscopy (FESEM) images was revealed that nanocolumnar ZnO structure thin films are produced on the substrates using high purity ZnO as the target at RF power of 250 W in the argon and oxygen gas mixture ambient. The XRD spectra reveal that the deposited films are preferentially grown along the c-axis indicating high ZnO crystallinity. The ultraviolet-visible (UV-Vis) spectra show that all samples are very transparent in the visible region (400 – 800 nm) with average transparency above 80 %. The photocurrent properties indicate that ZnO thin film prepared at oxygen flow rate of 20 sccm has the optimum characteristic for ultraviolet sensor applications. This finding suggested that the oxygen flow rates play important role and has critical value for semiconducting nanocolumnar ZnO growth in the sputtering system, which can produce ZnO thin film with high sensitivity of ultraviolet detection.


2015 ◽  
Vol 780 ◽  
pp. 23-27 ◽  
Author(s):  
H. Fazmir ◽  
Y. Wahab ◽  
A.F.M. Anuar ◽  
M.Z. Zainol ◽  
M. Najmi ◽  
...  

A layer of ZnO thin film was deposited repetitively 15 times on a silicon substrate by sol-gel spin coating technique. The structural and electrical characteristic of the thin film was studied and presented. For structural characterization, Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM) analysis were chosen while Semiconductor Parametric Analyzer (SPA) was used to measure the electrical characteristic. The ZnO thin film thickness were measured to be between 165 nm to 180 nm. The resistance increased proportionally with annealing temperature with the lowest value of 80Ω. Structurally, the grain sizes of the ZnO thin films increased with the increase in annealing temperature. The root mean square (RMS) and average surface roughness (Ra) were measured respectively.


2020 ◽  
Vol 31 (9) ◽  
pp. 6948-6955
Author(s):  
Mustafa Özgür ◽  
Suat Pat ◽  
Reza Mohammadigharehbagh ◽  
Uğur Demirkol ◽  
Nihan Akkurt ◽  
...  

2021 ◽  
Vol 32 (3) ◽  
pp. 2696-2703
Author(s):  
Zexuan Guo ◽  
Man Zhao ◽  
Dayong Jiang ◽  
Jing Zhang ◽  
Chunyan Xu

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