Secondary Ion Mass Spectroscopy of Solid Surfaces

2020 ◽  
Author(s):  
V. Cherepin
Keyword(s):  
Mass Spectroscopy ◽  
Solid Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Failure Isolation of Mobile Ions Using Secondary Ion Mass Spectroscopy

1997 ◽  
Author(s):  
R. John
Keyword(s):  
Thin Films ◽  
Quantitative Analysis ◽  
Mass Spectroscopy ◽  
Solid Surfaces ◽  
Secondary Ion Mass Spectroscopy ◽  
Sims Analysis ◽  
Cmos Vlsi ◽  
Mobile Ions ◽  
Secondary Ion

Abstract Secondary Ion Mass Spectroscopy (SIMS) can be applied to all elements, and it facilitates the quantitative analysis of solid surfaces, including monolayers. The method is widely used in studies of adsorption, oxidation, corrosion, catalysis, diffusion and in characterization of thin films and coatings. [1] This technique can very well be applied in semiconductor failure analysis for not only detecting the source of failure, but also isolating the failure to a particular location, which is very important for corrective action procedures. SIMS analysis was performed on a CMOS VLSI sample with suspected mobile ionic problem, and it proved to be very effective in providing details of the specific mobile ionic elements involved, source of contamination, and resident location of the mobile ions.

Effect of Point Defect Injection on B diffusion in C containing Si and SiGe

2004 ◽  
Vol 809 ◽  
Author(s):  
Mudith S. A. Karunaratne ◽  
Janet M. Bonar ◽  
Jing Zhang ◽  
Arthur F. W. Willoughby
Keyword(s):  
Computer Simulation ◽  
Point Defect ◽  
Mass Spectroscopy ◽  
Diffusion Coefficients ◽  
Secondary Ion Mass Spectroscopy ◽  
Annealing Conditions ◽  
Defect Injection ◽  
Before And After ◽  
Secondary Ion

ABSTRACTIn this paper, we compare B diffusion in epitaxial Si, Si with 0.1%C, SiGe with 11% Ge and SiGe:C with 11%Ge and 0.1%C at 1000°C under interstitial, vacancy and non-injection annealing conditions. Diffusion coefficients of B in each material were extracted by computer simulation, using secondary ion mass spectroscopy (SIMS) profiles obtained from samples before and after annealing.Interstitial injection enhances B diffusion considerably in all materials compared to inert annealing. In samples which experienced vacancy injection, B diffusion was suppressed. The results are consistent with the view that B diffusion in these materials occurs primarily via interstitialcy type defects.

Metal—Polyimide Interfaces Characterized by Secondary Ion Mass Spectroscopy

1990 ◽  
pp. 297-311 ◽  
Author(s):  
B. K. Furman ◽  
S. Purushothaman ◽  
E. Castellani ◽  
S. Renick ◽  
D. Neugroshl
Keyword(s):  
Mass Spectroscopy ◽  
Secondary Ion Mass Spectroscopy ◽  
Secondary Ion

Cr diffusion inα-Al2O3: Secondary ion mass spectroscopy and first-principles study

2010 ◽  
Vol 82 (17) ◽  
Author(s):  
Nobuaki Takahashi ◽  
Teruyasu Mizoguchi ◽  
Tsubasa Nakagawa ◽  
Tetsuya Tohei ◽  
Isao Sakaguchi ◽  
...  
Keyword(s):  
Mass Spectroscopy ◽  
First Principles ◽  
Secondary Ion Mass Spectroscopy ◽  
First Principles Study ◽  
Secondary Ion
Sign in / Sign up

Export Citation Format

Share Document