Improved Sensitivity of Dielectric Modulated Junctionless Transistor for Nanoscale Biosensor Design

2020 ◽  
Vol 18 (4) ◽  
pp. 328-333
Author(s):  
Shradhya Singh ◽  
Shashi Bala ◽  
Balwant Raj ◽  
Balwinder Raj

This work has proposed a device i.e., Dielectric Modulated (DM) Junctionless Transistor which is utilizes as Label-Free (LF) electrical characteristic detection of bio-molecules. The electrical characteristics used for the detection of biomolecules are electric field, surface potential, drain current and threshold voltage (Vth). Due to immobilization of biomolecules in the cavity region, the threshold voltage change in comparison to the absence of biomolecule, which is utilizes as the sensitivity metric. The sensitivity of biomolecule detection can be enhanced by using asymmetric gate operation of the device. In asymmetric mode the degree of sensitivity is almost five times higher than that of the symmetric mode of operation.

2021 ◽  
Author(s):  
Deepak Kumar Panda ◽  
Rajan Singh ◽  
Trupti Lenka ◽  
Vishal Goyal ◽  
Nour El I Boukortt ◽  
...  

In this paper, a dielectric modulated negative capacitance (NC)-MoS<sub>2</sub> field effect transistor (FET)-based biosensor is proposed for label-free detection of biomolecules such as enzymes, proteins, DNA, etc. Various reports present experimental demonstration and modelling of NC-MoS<sub>2</sub> FET, but it is never utilized as a dielectric modulated biosensor. Therefore, in this work, the modelling, characterization and sensitivity analysis of dielectric modulated NC-MoS<sub>2</sub> FET is focussed. For immobilization of biomolecules, a nanocavity is formed below the gate by etching some portion of the gate oxide material. The immobilization of biomolecules in the cavity leads to a variation of different electrostatic properties such as surface potential, threshold voltage, drain current, and subthreshold-swing (SS) which can be utilized as sensing parameters. An analytical model for the proposed biosensor is also developed in the subthreshold region by considering the properties of two-dimensional (2D) ferroelectric materials and benchmarked with TCAD device simulations. The effect of change of gate length and doping concentration on different electrical properties is also analysed to estimate the optimum value of channel doping. The results prove that the proposed device can be used for next-generation low power label-free biosensor which shows enhanced sensitivity as compared to traditional FET-based biosensors.


2015 ◽  
Vol 7 (13) ◽  
pp. 5606-5610 ◽  
Author(s):  
Zhimei Huang ◽  
Jia Ge ◽  
Lan Liu ◽  
Jianhui Jiang ◽  
Guoli Shen ◽  
...  

We developed a novel label-free biosensor for biomolecule detection based on the thioflavin T (ThT)-induced conformational change of guanine-rich oligonucleotides and self-assembled aptamer/GO nanosheet architecture.


2021 ◽  
Author(s):  
Deepak Kumar Panda ◽  
Rajan Singh ◽  
Trupti Lenka ◽  
Vishal Goyal ◽  
Nour El I Boukortt ◽  
...  

In this paper, a dielectric modulated negative capacitance (NC)-MoS<sub>2</sub> field effect transistor (FET)-based biosensor is proposed for label-free detection of biomolecules such as enzymes, proteins, DNA, etc. Various reports present experimental demonstration and modelling of NC-MoS<sub>2</sub> FET, but it is never utilized as a dielectric modulated biosensor. Therefore, in this work, the modelling, characterization and sensitivity analysis of dielectric modulated NC-MoS<sub>2</sub> FET is focussed. For immobilization of biomolecules, a nanocavity is formed below the gate by etching some portion of the gate oxide material. The immobilization of biomolecules in the cavity leads to a variation of different electrostatic properties such as surface potential, threshold voltage, drain current, and subthreshold-swing (SS) which can be utilized as sensing parameters. An analytical model for the proposed biosensor is also developed in the subthreshold region by considering the properties of two-dimensional (2D) ferroelectric materials and benchmarked with TCAD device simulations. The effect of change of gate length and doping concentration on different electrical properties is also analysed to estimate the optimum value of channel doping. The results prove that the proposed device can be used for next-generation low power label-free biosensor which shows enhanced sensitivity as compared to traditional FET-based biosensors.


2003 ◽  
Vol 773 ◽  
Author(s):  
Myung-Il Park ◽  
Jonging Hong ◽  
Dae Sung Yoon ◽  
Chong-Ook Park ◽  
Geunbae Im

AbstractThe large optical detection systems that are typically utilized at present may not be able to reach their full potential as portable analysis tools. Accurate, early, and fast diagnosis for many diseases requires the direct detection of biomolecules such as DNA, proteins, and cells. In this research, a glass microchip with integrated microelectrodes has been fabricated, and the performance of electrochemical impedance detection was investigated for the biomolecules. We have used label-free λ-DNA as a sample biomolecule. By changing the distance between microelectrodes, the significant difference between DW and the TE buffer solution is obtained from the impedance-frequency measurements. In addition, the comparison for the impedance magnitude of DW, the TE buffer, and λ-DNA at the same distance was analyzed.


2021 ◽  
Vol 14 (1) ◽  
pp. 014003
Author(s):  
Shahab Mollah ◽  
Kamal Hussain ◽  
Abdullah Mamun ◽  
Mikhail Gaevski ◽  
Grigory Simin ◽  
...  

2012 ◽  
Vol 717-720 ◽  
pp. 1059-1064 ◽  
Author(s):  
Sei Hyung Ryu ◽  
Lin Cheng ◽  
Sarit Dhar ◽  
Craig Capell ◽  
Charlotte Jonas ◽  
...  

We present our recent developments in 4H-SiC power DMOSFETs. 4H-SiC DMOSFETs with a room temperature specific on-resistance of 3.7 mΩ-cm2 with a gate bias of 20 V, and an avalanche voltage of 1550 V with gate shorted to source, was demonstrated. A threshold voltage of 3.5 V was extracted from the power DMOSFET, and a subthreshold swing of 200 mV/dec was measured. The device was successfully scaled to an active area of 0.4 cm2, and the resulting device showed a drain current of 377 A at a forward voltage drop of 3.8 V at 25oC.


2008 ◽  
Vol 24 (3) ◽  
pp. 461-466 ◽  
Author(s):  
Hongying Zhu ◽  
Ian M. White ◽  
Jonathan D. Suter ◽  
Xudong Fan

2017 ◽  
Vol 250 ◽  
pp. 39-43 ◽  
Author(s):  
Taiga Ajiri ◽  
Takao Yasui ◽  
Masatoshi Maeki ◽  
Akihiko Ishida ◽  
Hirofumi Tani ◽  
...  

2021 ◽  
Author(s):  
Rishu Chaujar ◽  
Mekonnen Getnet Yirak

Abstract In this work, junctionless double and triple metal gate high-k gate all around nanowire field-effect transistor-based APTES biosensor has been developed to study the impact of ITCs on device sensitivity. The analytical results were authenticated using ‘‘ATLAS-3D’’ device simulation tool. Effect of different interface trap charge on the output characteristics of double and triple metal gate high-k gate all around junctionless NWFET biosensor was studied. Output characteristics, like transconductance, output conductance,drain current, threshold voltage, subthreshold voltage and switching ratio, including APTES biomolecule, have been studied in both devices. 184% improvement has been investigated in shifting threshold voltage in a triple metal gate compared to a double metal gate when APTES biomolecule immobilizes on the nanogap cavity region under negative ITCs. Based on this finding, drain off-current ratio and shifting threshold voltage were considered as sensing metrics when APTES biomolecule immobilizes in the nanogap cavity under negative ITCs which is significant for Alzheimer's disease detection. We signifies a negative ITC has a positive impact on our proposed biosensor device compared to positive and neutral ITCs.


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