Carrier Mobility Model of DR-Ge1–xSnx for Monolithic Same Layer Optoelectronic Integration

2019 ◽  
Vol 11 (9) ◽  
pp. 1315-1325
Author(s):  
Wen-Yang ◽  
Jian-Jun Song ◽  
Yuan-Hao Miao ◽  
Jing Zhang ◽  
Xian-Yin Dai
Keyword(s):  
Carrier Mobility ◽  
Mobility Model ◽  
Optoelectronic Integration

Study on Carrier Mobility Model for PD-Ge Monolithic Optoelectronic Integration Chips

2019 ◽  
Vol 14 (12) ◽  
pp. 1776-1785
Author(s):  
Ren Yuan ◽  
Song Jianjun ◽  
Yang Wen ◽  
Dai Xianying ◽  
Zhao Tianlong
Keyword(s):  
High Speed ◽  
Carrier Mobility ◽  
Mobility Model ◽  
Integrated System ◽  
Analytical Models ◽  
Physical Parameters ◽  
Si Substrate ◽  
Optoelectronic Integration ◽  
The Difference ◽  
Higher Carrier Mobility

Based on the difference of thermal expansion coefficient between Si and Ge, low-intensity tensile stress can be introduced into Ge epitaxial layer on Si substrate. S-Ge/Si semiconductor (as known as low tensile strained Ge grown on Si substrate) has a higher carrier mobility when compared with unstrained-Ge or Si material, so that s-Ge/Si is appropriate for the production of high-speed circuit. At the same time, transformation from indirect bandgap semiconductor Ge into Pseudo-Direct bandgap semiconductor (which is also called PD-Ge) will be happen after s-Ge/Si is heavy doped, which makes LED produced of PD-Ge material perform a higher luminous efficiency because the radiative recombining probability of carriers in PD-Ge material is greatly improved compared with unstrained one. Taking the advantages referred of s-Ge/Si into account, s-Ge/Si has the potential to PD-Ge monolithic optoelectronic integration. Carrier mobility of the semiconductor is one of the key physical parameters during the design and simulation of PD-Ge monolithic optoelectronic integrated system. While as far as the authors are aware, carrier mobility model of s-Ge/Si is still rarely reported to date. In view of that all above, based on the E-k relation in both conduction band and valence band of s-Ge/Si material, the analytical models of physical parameters in energy band are established, and the models are verified by experiments. Then the s-Ge/Si carrier models are further established based on our band structure model, and the Monte Carlo method is used to verify our s-Ge/Si carrier mobility model. The quantificational results of our paper will help understand s-Ge/Si material physics and provide an important theoretical basis for the design of PD-Ge monolithic optoelectronic integration.

Carrier mobility model for simulation of SiC-based electronic devices

2002 ◽  
Vol 17 (9) ◽  
pp. 974-977 ◽  
Author(s):  
T T Mnatsakanov ◽  
M E Levinshtein ◽  
L I Pomortseva ◽  
S N Yurkov
Keyword(s):  
Carrier Mobility ◽  
Electronic Devices ◽  
Mobility Model

Minority carrier mobility model for device simulation

1990 ◽  
Vol 33 (6) ◽  
pp. 727-731 ◽  
Author(s):  
Naoyuki Shigyo ◽  
Hiroyoshi Tanimoto ◽  
Masayuki Norishima ◽  
Seiji Yasuda
Keyword(s):  
Carrier Mobility ◽  
Minority Carrier ◽  
Device Simulation ◽  
Mobility Model ◽  
Minority Carrier Mobility

Carrier mobility model for GaN

2003 ◽  
Vol 47 (1) ◽  
pp. 111-115 ◽  
Author(s):  
Tigran T Mnatsakanov ◽  
Michael E Levinshtein ◽  
Lubov I Pomortseva ◽  
Sergey N Yurkov ◽  
Grigory S Simin ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Mobility Model

MOSFET carrier mobility model based on gate oxide thickness, threshold and gate voltages

1996 ◽  
Vol 39 (10) ◽  
pp. 1515-1518 ◽  
Author(s):  
Kai Chen ◽  
H. Clement Wann ◽  
Jon Dunster ◽  
Ping K. Ko ◽  
Chenming Hu ◽  
...  
Keyword(s):  
Carrier Mobility ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Mobility Model ◽  
Model Based ◽  
Gate Oxide Thickness

LOW-FIELD MOBILITY MODEL ON PARABOLIC BAND ENERGY OF GRAPHENE NANORIBBON

2011 ◽  
Vol 25 (04) ◽  
pp. 281-290 ◽  
Author(s):  
N. AZIZIAH AMIN ◽  
ZAHARAH JOHARI ◽  
MOHAMMAD TAGHI AHMADI ◽  
RAZALI ISMAIL
Keyword(s):  
Carrier Mobility ◽  
Carrier Transport ◽  
Mobility Model ◽  
Graphene Nanoribbon ◽  
Band Energy ◽  
Low Field ◽  
Field Mobility ◽  
Increasing Temperature ◽  
Degenerate Regime ◽  
Low Field Mobility

The carrier mobility in low-field specifically in parabolic energy region of one-dimensional graphene nanoribbon (GNR) band energy is presented in this work. Low-field mobility model describe the carrier transport and its dependency factors when dealing with degenerate and non-degenerate principals. The result shows that the low-field mobility strongly depends on the temperature in the non-degenerate regime in which it sharply decreases with increasing temperature in the range of 10–250 K but the mobility is less affected by the temperature above 250 K. The effect of varying the GNR width to the mobility is also demonstrated in this work. In addition, it is also shown that the mobility depends on the carrier concentration in degenerate domain in which it increases at higher carrier concentrations.

Conduction Mechanism Based Model of Organic Field Effect Transistor Structure

2007 ◽  
Vol 555 ◽  
pp. 125-130
Author(s):  
Rajko M. Šašić ◽  
P.M. Lukić
Keyword(s):  
Field Effect ◽  
Carrier Mobility ◽  
Field Effect Transistor ◽  
Conduction Mechanism ◽  
Mobility Model ◽  
Transistor Structure ◽  
Organic Field Effect Transistor ◽  
Current Voltage ◽  
Polymer Semiconductor ◽  
Effect Transistor

Carriers mobility model of olygomer and polymer semiconductor based OFET (Organic Field Effect Transistor) structures is presented in this paper. Starting from the conduction mechanism in the mentioned organic materials, a carrier mobility dependence on temperature, electric field and trap density μ(T,E,NT) was investigated, inspiring directly the current-voltage I(V) model of OFET structures. Subsequent simulations were also performed and the obtained results compared with the data available in the literature.

HEMT Carrier Mobility Analytical Model

2005 ◽  
Vol 494 ◽  
pp. 43-48 ◽  
Author(s):  
P.M. Lukić ◽  
R.M. Ramović ◽  
Rajko M. Šašić
Keyword(s):  
Carrier Mobility ◽  
Electron Gas ◽  
High Electron Mobility Transistor ◽  
Mobility Model ◽  
High Electron ◽  
Dimensional Electron ◽  
Proposed Model ◽  
Different Types ◽  
Dimensional Electron Gas ◽  
Good Agreement

In this paper a new analytical carrier mobility model of a heterostructure unipolar transistor, High Electron Mobility Transistor (HEMT), is presented. The influence of the two dimensional electron gas confined in a HEMT channel on the device carrier mobility, is considered. The mobility dependence on temperature is also included in the model. Advantages of this model are its simplicity and straightforward implementation. Besides, it promises to be applied to quite different types of HEMTs. The model was tested. The results derived from simulations based on the proposed model are in very good agreement with the already known experimental data and theoretically obtained ones, available in literature.

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