Film Density Controlled-InGaZnO Multi-Stacked Channel Based Thin-Film Transistors Using a Solution Process

2017 ◽  
Vol 9 (9) ◽  
pp. 1578-1582 ◽  
Author(s):  
You Seung Rim ◽  
Min-Jong Keum ◽  
Yongmin Baek ◽  
Byung Moo Lee ◽  
Kyung Hwan Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Film Density

scholarly journals Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Solution Technique ◽  
Term Stability ◽  
Long Term Stability ◽  
Process Method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.

Effect of Zr addition on ZnSnO thin-film transistors using a solution process

2010 ◽  
Vol 97 (23) ◽  
pp. 233502 ◽  
Author(s):  
You Seung Rim ◽  
Dong Lim Kim ◽  
Woong Hee Jeong ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Zr Addition

Organic Thin Film Transistors Fabricated by a Solution Process Using Direct Patterned Single-Layer Graphene Electrodes

2020 ◽  
Vol 20 (10) ◽  
pp. 6435-6440
Author(s):  
Do-Kyung Kim ◽  
Jae-Hyung Han ◽  
Muhan Choi. ◽  
Jin-Hyuk Bae
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Soft Lithography ◽  
Solution Process ◽  
Single Layer ◽  
Organic Thin Film Transistors ◽  
Single Layer Graphene ◽  
Metal Catalyst ◽  
Organic Thin Film ◽  
Layer Graphene

We propose the direct transfer method of single-layer graphene (SLG) from metal catalyst Cu-foil to a polymeric insulator and the direct patterning method of the SLG for electrodes of organic thin-film transistors (OTFTs) without contamination using soft-lithography. Through soft-lithography, SLG can be formed in various patterns relatively easily in comparison with the conventional photolithography method that has multiple complex process steps to make graphene patterns. Furthermore, the 6,13-bis(triisopropylsilylethynyl) pentacene OTFTs are fabricated in solution with SLG source and drain electrodes. As a result, the field-effect mobility of OTFTs based on SLG electrodes was enhanced about 4 times in comparison with that of OTFTs using typical metal electrodes due to the decrease in contact resistance.

Pentacene Thin-film Transistors Fabricated with a Simple Solution Process

2006 ◽  
Vol 937 ◽  
Author(s):  
Yutaka Natsume ◽  
Takashi Minakata
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Solution Process ◽  
Simple Solution ◽  
Trap States ◽  
Solution Processed ◽  
High Crystallinity ◽  
Transfer Characteristics

ABSTRACTWe have succeeded in developing a simple solution process of pentacene thin films without particular precursor materials. High crystallinity and large plate-like grains of the solution-processed thin films were observed with several analyses. The solution-processed pentacene thin-film transistors (TFTs) were also fabricated and exhibited good transfer characteristics with maximum carrier mobility above 1 cm2/Vs. The solution-processed TFTs also indicated a steep subthreshold swing and high stability of the threshold voltage against the storage in the atmosphere. The trap states and the bulk carrier density in the films were evaluated from the transfer characteristics by using the analytical model. We considered that these good properties could be attributed to the high crystallinity and the large grains of the solution-processed thin films.

Eco-friendly, solution-processed In-W-O thin films and their applications in low-voltage, high-performance transistors

2016 ◽  
Vol 4 (20) ◽  
pp. 4478-4484 ◽  
Author(s):  
Ao Liu ◽  
Guoxia Liu ◽  
Huihui Zhu ◽  
Byoungchul Shin ◽  
Elvira Fortunato ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
High Performance ◽  
Low Voltage ◽  
Low Cost ◽  
Solution Process ◽  
Solution Processed

Eco-friendly IWO thin films are fabricated via a low-cost solution process and employed as channel layers in thin-film transistors.

Poly(4-vinylphenol-co-methyl methacrylate)/Hafnium Oxide Nanocomposite Gate Insulators for Organic Thin-Film Transistors

2020 ◽  
Vol 20 (7) ◽  
pp. 4188-4192
Author(s):  
Shang Hao Piao ◽  
Hyeonju Lee ◽  
Jaehoon Park ◽  
Hyoung Jin Choi
Keyword(s):  
Thin Film ◽  
Methyl Methacrylate ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Solution Process ◽  
Experimental Result ◽  
Mixed Solution ◽  
Organic Thin Film ◽  
Insulator Layers ◽  
High Dielectric

We fabricate 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-Pn) thin-film transistors (TFTs) with nanocomposite insulators. The insulator layers consist of both poly(4-vinylphenol-co-methyl methacrylate) and high-dielectric constant hafnium oxide (HfO2) nanoparticles. The HfO2 nanoparticles are ball-milled for sufficient dispersion in a nanocomposite solution to enable solution process methods to be used in preparing the insulator layers. The nanocomposite insulators demonstrate high capacitances and improve the performance of TIPS-Pn TFTs. Nonetheless, particle aggregates are produced in the nanocomposites solution with high HfO2 concentrations, generating detrimental effects on the dielectric properties and the TFT performance. Our experimental result implies that the optimum concentration of HfO2 nanoparticles in a mixed solution will find to be ~11.5 wt%.

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