Numerical Simulation on Thickness Dependency and Bias Stress Test of Ultrathin IGZO Thin‐Film Transistors Via a Solution Process

2019 ◽  
Vol 216 (7) ◽  
pp. 1800987
Author(s):  
Mohamed Labed ◽  
Nouredine Sengouga ◽  
Kyung Hwan Kim ◽  
You Seung Rim
Keyword(s):  
Thin Film ◽  
Numerical Simulation ◽  
Thin Film Transistors ◽  
Stress Test ◽  
Solution Process ◽  
Bias Stress

Improvement in bias-stress and long-term stabilities for in-Ga-Zn-O thin-film transistors using solution-process-compatible polymeric gate insulator

2019 ◽  
Vol 71 ◽  
pp. 7-13 ◽  
Author(s):  
Sol-Mi Kwak ◽  
Hyeong-Rae Kim ◽  
Hye-Won Jang ◽  
Ji-Hee Yang ◽  
Furuta Mamoru ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Gate Insulator ◽  
Bias Stress

scholarly journals Effects of Yttrium Doping on a-IGZO Thin Films for Use as a Channel Layer in Thin-Film Transistors

Coatings ◽  
2019 ◽  
Vol 9 (1) ◽  
pp. 44 ◽  
Author(s):  
Sanghyun Cho ◽  
Seohan Kim ◽  
Doyeong Kim ◽  
Moonsuk Yi ◽  
Junseok Byun ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Stress Test ◽  
Driving Mode ◽  
Bias Stress ◽  
Channel Layer ◽  
Light Region ◽  
Shallow Defect ◽  
High Bond ◽  
Yttrium Doping

Amorphous In−Ga−Zn−O (a-IGZO) has been studied as a channel layer in thin-film transistors (TFTs). To improve the bias-induced instability of a-IGZO TFTs, we introduced yttrium with high bond enthalpy by magnetron co-sputtering system. The Y-doped a-IGZO (a-IGZO:Y) films show relatively lower carrier concentration and higher Hall mobility, which is due to the suppression of oxygen vacancies caused by Y doping. The a-IGZO:Y showed a relatively higher transmittance in the visible light region compared to non-doped IGZO, which could be due to the decrease of shallow defect levels caused by oxygen vacancy in the band gap. The a-IGZO without Y doping showed dramatic changes in electrical properties as times progressed (over 240 h); however, the a-IGZO:Y showed no significant changes. The a-IGZO:Y TFTs demonstrated a more stable driving mode as exhibited in the positive gate bias stress test even though the values of VTH and SS were slightly degraded.

scholarly journals Improvement of the long-term stability of ZnSnO thin film transistors by tungsten incorporation using a solution-process method

RSC Advances ◽  
2018 ◽  
Vol 8 (37) ◽  
pp. 20990-20995 ◽  
Author(s):  
Xiang Yang ◽  
Shu Jiang ◽  
Jun Li ◽  
Jian-Hua Zhang ◽  
Xi-Feng Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Solution Technique ◽  
Term Stability ◽  
Long Term Stability ◽  
Process Method

In this paper, W-doped ZnSnO (WZTO) thin films and TFT devices are successfully fabricated by a wet-solution technique.

H2O adsorption on amorphous In-Ga-Zn-O thin-film transistors under negative bias stress

2017 ◽  
Vol 111 (7) ◽  
pp. 073506 ◽  
Author(s):  
Jianwen Yang ◽  
Po-Yung Liao ◽  
Ting-Chang Chang ◽  
Hsiao-Cheng Chiang ◽  
Bo-Wei Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Negative Bias ◽  
Bias Stress

P-5: A Simple Dipping Method to Improve Positive Bias Stress Stability of In-Ga-Zn-O Thin-Film Transistors using Hydrogen Peroxide

2016 ◽  
Vol 47 (1) ◽  
pp. 1136-1139
Author(s):  
Sung Pyo Park ◽  
Hong Jae Kim ◽  
Young Jun Tak ◽  
Seonghwan Hong ◽  
Hee Jun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Hydrogen Peroxide ◽  
Thin Film Transistors ◽  
Positive Bias ◽  
Bias Stress

Effect of Zr addition on ZnSnO thin-film transistors using a solution process

2010 ◽  
Vol 97 (23) ◽  
pp. 233502 ◽  
Author(s):  
You Seung Rim ◽  
Dong Lim Kim ◽  
Woong Hee Jeong ◽  
Hyun Jae Kim
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Solution Process ◽  
Zr Addition
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