Morphology Transformation of Au Nanoparticles for Vertically Aligned Si Nanowire Arrays

2016 ◽  
Vol 8 (8) ◽  
pp. 1696-1700 ◽  
Author(s):  
Yi-Seul Park ◽  
Hyun Ji Kim ◽  
Jin Seok Lee
Keyword(s):  
Au Nanoparticles ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Vertically Aligned

Air-Bridged Ohmic Contact on Vertically Aligned Si Nanowire Arrays: Application to Molecule Sensors

2012 ◽  
Vol 24 (17) ◽  
pp. 2284-2288 ◽  
Author(s):  
Hee Han ◽  
Jungkil Kim ◽  
Ho Sun Shin ◽  
Jae Yong Song ◽  
Woo Lee
Keyword(s):  
Ohmic Contact ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Vertically Aligned

Fabricating vertically aligned sub-20 nm Si nanowire arrays by chemical etching and thermal oxidation

2016 ◽  
Vol 27 (16) ◽  
pp. 165303 ◽  
Author(s):  
Luping Li ◽  
Yin Fang ◽  
Cheng Xu ◽  
Yang Zhao ◽  
Nanzhi Zang ◽  
...  
Keyword(s):  
Thermal Oxidation ◽  
Chemical Etching ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Vertically Aligned ◽  
20 Nm

Fabrication and Field-Emission Properties of Vertically-Aligned Tapered [110]Si Nanowire Arrays Prepared by Nanosphere Lithography and Electroless Ag-Catalyzed Etching

NANO ◽  
2018 ◽  
Vol 13 (09) ◽  
pp. 1850108 ◽  
Author(s):  
Z. Feng ◽  
K. Q. Lin ◽  
Y. C. Chen ◽  
S. L. Cheng
Keyword(s):  
Electron Microscopy ◽  
Field Emission ◽  
Room Temperature ◽  
Morphological Evolution ◽  
Nanowire Array ◽  
Nanosphere Lithography ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Si Nanowire Array ◽  
Vertically Aligned

In this study, the controllable fabrication of a variety of vertically aligned, single-crystalline [110]-oriented Si nanowire arrays with sharp tips on (110)Si substrates is achieved using a combined self-assembled nanosphere lithography and multiple electroless Ag-catalyzed Si etching processes. All of the experiments were performed at room temperature. The morphological evolution and formation mechanism of long tapered [110]Si nanowire arrays during the multiple tip-sharpening cycle processes have been investigated by scanning electron microscopy, transmission electron microscopy and water contact angle measurements. Field emission measurements demonstrate that the field-emission behaviors of all nanowire samples produced in this study agree well with the Fowler–Nordheim theory, and the produced long tapered [110]Si nanowire array possesses superior electron emission characteristics, with a very low turn-on field of 1.4[Formula: see text]V/[Formula: see text]m and a high field enhancement factor of 3816. The simple and room temperature fabrication of the well-ordered long tapered [110]Si nanowire array and its excellent electron field emission performance suggest that it can serve as a good candidate for applications in high-performance Si-based vacuum electronic nanodevices.

Photocarrier Transport and Carrier Recombination Efficiency in Vertically Aligned Si Nanowire Arrays Synthesized Via Metal-Assisted Chemical Etching

2013 ◽  
Vol 6 (8) ◽  
pp. 082101 ◽  
Author(s):  
Joselito Muldera ◽  
Neil Irvin Cabello ◽  
Joseph Christopher Ragasa ◽  
Arvin Mabilangan ◽  
Ma. Herminia Balgos ◽  
...  
Keyword(s):  
Chemical Etching ◽  
Nanowire Arrays ◽  
Si Nanowire ◽  
Carrier Recombination ◽  
Recombination Efficiency ◽  
Vertically Aligned ◽  
Metal Assisted Chemical Etching

scholarly journals Solar-blind ultraviolet photodetector based on vertically aligned single-crystalline β-Ga2O3 nanowire arrays

Nanophotonics ◽  
2020 ◽  
Vol 9 (15) ◽  
pp. 4497-4503
Author(s):  
Liying Zhang ◽  
Xiangqian Xiu ◽  
Yuewen Li ◽  
Yuxia Zhu ◽  
Xuemei Hua ◽  
...  
Keyword(s):  
Inductively Coupled Plasma ◽  
Light Trapping ◽  
High Surface ◽  
Volume Ratio ◽  
Average Diameter ◽  
Nanowire Arrays ◽  
Etching Technique ◽  
Inductively Coupled ◽  
Solar Blind ◽  
Vertically Aligned

AbstractVertically aligned nanowire arrays, with high surface-to-volume ratio and efficient light-trapping absorption, have attracted much attention for photoelectric devices. In this paper, vertical β-Ga2O3 nanowire arrays with an average diameter/height of 110/450 nm have been fabricated by the inductively coupled plasma etching technique. Then a metal-semiconductor-metal structured solar-blind photodetector (PD) has been fabricated by depositing interdigital Ti/Au electrodes on the nanowire arrays. The fabricated β-Ga2O3 nanowire PD exhibits ∼10 times higher photocurrent and responsivity than the corresponding film PD. Moreover, it also possesses a high photocurrent to dark current ratio (Ilight/Idark) of ∼104 and a ultraviolet/visible rejection ratio (R260 nm/R400 nm) of 3.5 × 103 along with millisecond-level photoresponse times.

scholarly journals Vertically Aligned CsPbBr3 Nanowire Arrays with Template-Induced Crystal Phase Transition and Stability

2021 ◽  
Vol 125 (8) ◽  
pp. 4860-4868
Author(s):  
Zhaojun Zhang ◽  
Klara Suchan ◽  
Jun Li ◽  
Crispin Hetherington ◽  
Alexander Kiligaridis ◽  
...  
Keyword(s):  
Phase Transition ◽  
Nanowire Arrays ◽  
Crystal Phase ◽  
Vertically Aligned ◽  
Crystal Phase Transition
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