Improved Heat Dissipation in GaN-Based Thin-Film Light-Emitting Diode with Lateral-Electrode Configuration

2015 ◽  
Vol 7 (2) ◽  
pp. 283-286
Author(s):  
Jiang-Yong Zhang ◽  
Lei-Ying Ying ◽  
Ming Chen ◽  
Wen-Jie Liu ◽  
Jian Yu ◽  
...  
Keyword(s):  
Thin Film ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Electrode Configuration ◽  
Light Emitting

Effects of electron-withdrawing groups in imidazole-phenanthroline ligands and their influence on the photophysical properties of EuIII complexes for white light-emitting diodes

2017 ◽  
Vol 41 (18) ◽  
pp. 9826-9839 ◽  
Author(s):  
Boddula Rajamouli ◽  
Rachna Devi ◽  
Abhijeet Mohanty ◽  
Venkata Krishnan ◽  
Sivakumar Vaidyanathan
Keyword(s):  
Thin Film ◽  
Quantum Yield ◽  
White Light ◽  
Light Emitting Diode ◽  
Photophysical Properties ◽  
Red Light ◽  
Europium Complexes ◽  
Light Emitting ◽  
White Light Emitting Diodes ◽  
Phenanthroline Ligands

The red light emitting diode (LED) was fabricated by using europium complexes with InGaN LED (395 nm) and shown digital images, corresponding CIE color coordinates (red region) as well as obtained highest quantum yield of the thin film (78.7%).

Reliability of High-Power Light Emitting Diode Attached With Different Thermal Interface Materials

2010 ◽  
Vol 132 (3) ◽  
Author(s):  
Xin Li ◽  
Xu Chen ◽  
Guo-Quan Lu
Keyword(s):  
High Power ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Temperature Cycling ◽  
Fluorescent Light ◽  
Light Sources ◽  
Light Emitting ◽  
Die Attach ◽  
Nanosilver Paste ◽  
Interconnection Material

As a solid electroluminescent source, white light emitting diode (LED) has entered a practical stage and become an alternative to replace incandescent and fluorescent light sources. However, due to the increasing integration and miniaturization of LED chips, heat flux inside the chip is also increasing, which puts the packaging into the position to meet higher requirements of heat dissipation. In this study, a new interconnection material—nanosilver paste is used for the LED chip packaging to pursue a better optical performance, since high thermal conductivity of this material can help improve the efficiency of heat dissipation for the LED chip. The bonding ability of this new die-attach material is evaluated by their bonding strength. Moreover, high-power LED modules connected with nanosilver paste, Sn3Ag0.5Cu solder, and silver epoxy are aged under hygrothermal aging and temperature cycling tests. The performances of these LED modules are tested at different aging time. The results show that LED modules sintered with nanosilver paste have the best performance and stability.

Reduction of Thermal Resistance and Optical Power Loss Using Thin-Film Light-Emitting Diode (LED) Structure

2015 ◽  
Vol 62 (11) ◽  
pp. 6925-6933 ◽  
Author(s):  
Huan Ting Chen ◽  
Yuk Fai Cheung ◽  
Hoi Wai Choi ◽  
Siew Chong Tan ◽  
S. Y. Hui
Keyword(s):  
Thin Film ◽  
Thermal Resistance ◽  
Power Loss ◽  
Light Emitting Diode ◽  
Optical Power ◽  
Light Emitting

Thermal Analysis of High Power Light Emitting Diodes Package

2011 ◽  
Vol 687 ◽  
pp. 215-221
Author(s):  
Yuan Yuan Han ◽  
Hong Guo ◽  
Xi Min Zhang ◽  
Fa Zhang Yin ◽  
Ke Chu ◽  
...  
Keyword(s):  
Finite Element Method ◽  
High Power ◽  
Thermal Field ◽  
Heat Dissipation ◽  
Light Emitting Diode ◽  
Convective Heat Exchange ◽  
Input Power ◽  
Junction Temperature ◽  
Original Structure ◽  
Light Emitting

With increasing of the input power of the chips in light emitting diode (LED)， the thermal accumulation of LEDs package increases. Therefore solving the heat issue has become a precondition of high power LED application. In this paper, finite element method was used to analyze the thermal field of high power LEDs. The effect of the heatsink structure on the junction temperature was also investigated. The results show that the temperature of the chip is 95.8°C which is the highest, and it meets the requirement. The conductivity of each component affects the thermal resistance. Convective heat exchange is connected with the heat dissipation area. In the original structure of LEDs package the heat convected through the substrate is the highest, accounting for 92.58%. Three heatsinks with fin structure are designed to decrease the junction temperature of the LEDs package.

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