Low Cost Fabrication of Blue Luminescent Silicon Quantum Dots Using Photo-Induced Chemical Etching

2016 ◽  
Vol 8 (1) ◽  
pp. 86-89 ◽  
Author(s):  
Young-In Lee ◽  
Bum-Sung Kim ◽  
Soyeong Joo ◽  
Woo-Byoung Kim
Author(s):  
Jingjian Zhou ◽  
Jing Huang ◽  
Huai Chen ◽  
Archana Samanta ◽  
Jan Linnros ◽  
...  

Author(s):  
Guitao Du ◽  
Guoqian Li ◽  
Shibo Qiu ◽  
Linghong Liu ◽  
Yuewei Zheng ◽  
...  

2011 ◽  
Vol 383-390 ◽  
pp. 6270-6276 ◽  
Author(s):  
Li Hao Han ◽  
Jing Wang ◽  
Ren Rong Liang

Quantum dots applied in solar cells will be of great importance to enhance the quantum tunneling efficiency and improve the photogenerated current transport. In this study, a new easy-to-operate technology was developed to fabricate germanium-silicon quantum dots in a SiOx matrix. The quantum dots were formed by first deposited germanium-rich SiO on quartz substrate using pulsed laser deposition technique and then annealed under a comparatively high temperature. We have demonstrated a stable and low-cost fabrication process which is much cheaper than the epitaxy method to provide for the fabrication of high density germanium-silicon quantum dots. Quantum dots with diameters of 3~4 nm embedded in the amorphous SiOx layer were clearly observed. The morphological features of the thin film were characterized. The optical properties were performed by Raman spectroscopy, photoluminescence spectrum and XRD test respectively to verify the crystallization of quantum dots in the SiOx matrix. Reflectance spectrum displayed a high light absorption rate in a spectra region from 300 nm to 1200 nm, evidencing that germanium-silicon quantum dots have promising features to be used as absorber for photovoltaic application.


2018 ◽  
Author(s):  
Oscar A. Douglas-Gallardo ◽  
Cristián Gabriel Sánchez ◽  
Esteban Vöhringer-Martinez

<div> <div> <div> <p>Nowadays, the search of efficient methods able to reduce the high atmospheric carbon dioxide concentration has turned into a very dynamic research area. Several environmental problems have been closely associated with the high atmospheric level of this greenhouse gas. Here, a novel system based on the use of surface-functionalized silicon quantum dots (sf -SiQDs) is theoretically proposed as a versatile device to bind carbon dioxide. Within this approach, carbon dioxide trapping is modulated by a photoinduced charge redistribution between the capping molecule and the silicon quantum dots (SiQDs). Chemical and electronic properties of the proposed SiQDs have been studied with Density Functional Theory (DFT) and Density Functional Tight-Binding (DFTB) approach along with a Time-Dependent model based on the DFTB (TD-DFTB) framework. To the best of our knowledge, this is the first report that proposes and explores the potential application of a versatile and friendly device based on the use of sf -SiQDs for photochemically activated carbon dioxide fixation. </p> </div> </div> </div>


2021 ◽  
Vol 125 (6) ◽  
pp. 3421-3431
Author(s):  
İrem Nur Gamze Özbilgin ◽  
Batu Ghosh ◽  
Hiroyuki Yamada ◽  
Naoto Shirahata

2021 ◽  
pp. 2100288
Author(s):  
Marc Julian Kloberg ◽  
Haoyang Yu ◽  
Elisabeth Groß ◽  
Felix Eckmann ◽  
Tassilo M. F. Restle ◽  
...  

Author(s):  
Shikai Yan ◽  
Sheng Tang ◽  
Manman Luo ◽  
Lu Xue ◽  
Shilin Liu ◽  
...  

CsPbBr3-based photodetectors (PDs) have aroused enormous attention owing to their low-cost solution processing, outstanding optoelectronic properties, and remarkable stability. However, their performances remain a big challenge to meet the requirement...


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