Influence of low temperature p-GaN layer on the optical properties of a GaN-based blue light-emitting diodes

2016 ◽  
Vol 6 (6) ◽  
pp. 527-532
Author(s):  
Jianfei Li ◽  
Changfu Li ◽  
Qi Mu ◽  
Ziwu Ji ◽  
Yuanjie Lv ◽  
...  
Keyword(s):  
Optical Properties ◽  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting

Improved ESD characteristic of GaN-based blue light-emitting diodes with a low temperature n-type GaN insertion layer

2012 ◽  
Vol 33 (10) ◽  
pp. 104002 ◽  
Author(s):  
Panpan Li ◽  
Hongjian Li ◽  
Yiyun Zhang ◽  
Zhicong Li ◽  
Meng Liang ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting

Low‐temperature study of current and electroluminescence in InGaN/AlGaN/GaN double‐heterostructure blue light‐emitting diodes

1996 ◽  
Vol 69 (12) ◽  
pp. 1680-1682 ◽  
Author(s):  
Piotr Perlin ◽  
Marek Osiński ◽  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Jian Mu ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting ◽  
Double Heterostructure ◽  
Temperature Study

scholarly journals Phosphine-Free-Synthesized ZnSe/ZnS Core/Shell Quantum Dots for White Light-Emitting Diodes

2021 ◽  
Vol 11 (21) ◽  
pp. 10060
Author(s):  
Nyamsuren Byambasuren ◽  
Jiyeon Jo ◽  
Hyungduk Ko ◽  
Byeong-Kwon Ju ◽  
Ji Young Byun ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Optical Properties ◽  
Blue Light ◽  
White Light ◽  
Light Emitting Diodes ◽  
Core Shell ◽  
Light Emitting ◽  
White Leds ◽  
Deep Blue ◽  
Near Ultraviolet

Blue-light-emitting ZnSe core (C) and ZnSe/ZnS core/shell (C/S) quantum dots (QDs) were synthesized with phosphine-free precursors by a thermal decomposition method in paraffin oil solvent and applied to QD-converted light-emitting diodes (LEDs). The optical properties of the synthesized ZnSe C and ZnSe/ZnS C/S QDs were characterized by absorption spectroscopy and photoluminescence spectroscopy. Additionally, the quantum efficiency of the QDs was investigated. Their structural properties were studied with X-ray crystallography and transmission electron microscopy. The ZnSe/ZnS C/S QDs showed deep-blue light peaking at 425 nm. The blue-light-emitting ZnSe/ZnS C/S QDs were used as color-converting materials for near-ultraviolet LED-pumped blue LEDs and combined with yellow-light-emitting Zn-Cu-In-S/ZnS C/S QDs to fabricate white LEDs. The white LEDs showed warm white light [(CIE x, CIE y) = (0.4088, 0.3987)], Tc = 3488 K, and Ra = 61.2]. The results indicate that the ZnSe/ZnS C/S QDs have good potential for white light application after further improvements to their optical properties.

Thick, crack-free blue light-emitting diodes on Si(111) using low-temperature AlN interlayers andin situSixNy masking

2002 ◽  
Vol 80 (20) ◽  
pp. 3670-3672 ◽  
Author(s):  
A. Dadgar ◽  
M. Poschenrieder ◽  
J. Bläsing ◽  
K. Fehse ◽  
A. Diez ◽  
...  
Keyword(s):  
Low Temperature ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting

Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes

2006 ◽  
Vol 99 (5) ◽  
pp. 053104 ◽  
Author(s):  
Francesca Rossi ◽  
Maura Pavesi ◽  
Matteo Meneghini ◽  
Giancarlo Salviati ◽  
Manfredo Manfredi ◽  
...  
Keyword(s):  
Optical Properties ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Short Term ◽  
Electrical And Optical Properties ◽  
Light Emitting

Influence of In Fraction on the Optical Properties of InGaN/GaN Blue Light-Emitting Diodes

2011 ◽  
Vol 31 (10) ◽  
pp. 1016004 ◽  
Author(s):  
崔苗 Cui Miao ◽  
周桃飞 Zhou Taofei ◽  
张锦平 Zhang Jinping ◽  
黄小辉 Huang Xiaohui
Keyword(s):  
Optical Properties ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Light Emitting

Electrical and Optical Properties of InGaN/AlGaN Double Heterostructure Blue Light-Emitting Diodes

2001 ◽  
Vol 18 (2) ◽  
pp. 283-285 ◽  
Author(s):  
Shen Bo ◽  
Shi Hong-Tao ◽  
Zhang Rong ◽  
Chen Zhi-Zhong ◽  
Zheng You-Dou
Keyword(s):  
Optical Properties ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Double Heterostructure

Optical properties of blue light-emitting diodes in the InGaN/GaN system at high current densities

2008 ◽  
Vol 42 (11) ◽  
pp. 1355-1361 ◽  
Author(s):  
N. I. Bochkareva ◽  
R. I. Gorbunov ◽  
A. V. Klochkov ◽  
Yu. S. Lelikov ◽  
I. A. Martynov ◽  
...  
Keyword(s):  
Optical Properties ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
High Current ◽  
Light Emitting ◽  
Current Densities
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