Temperature dependent current–voltage curves study of GaN-based blue light-emitting diode

2016 ◽  
Vol 6 (2) ◽  
pp. 205-209 ◽  
Author(s):  
Mingsheng Xu ◽  
Qi Mu ◽  
Longfei Xiao ◽  
Quanbin Zhou ◽  
Hong Wang ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diode ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Current Voltage

scholarly journals Investigation of Forward Tunneling Characteristics of InGaN/GaN Blue Light-Emitting Diodes on Freestanding GaN Detached from a Si Substrate

Nanomaterials ◽  
2018 ◽  
Vol 8 (7) ◽  
pp. 543 ◽  
Author(s):  
Moonsang Lee ◽  
Hyunkyu Lee ◽  
Keun Song ◽  
Jaekyun Kim
Keyword(s):  
Leakage Current ◽  
Blue Light ◽  
Light Emitting Diodes ◽  
Forward Bias ◽  
Si Substrate ◽  
Temperature Dependent ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Characteristics ◽  
Recombination Current

We report forward tunneling characteristics of InGaN/GaN blue light emitting diodes (LEDs) on freestanding GaN detached from a Si substrate using temperature-dependent current–voltage (T-I-V) measurements. T-I-V analysis revealed that the conduction mechanism of InGaN/GaN LEDs using the homoepitaxial substrate can be distinguished by tunneling, diffusion and recombination current, and series resistance regimes. Their improved crystal quality, inherited from the nature of homoepitaxy, resulted in suppression of forward leakage current. It was also found that the tunneling via heavy holes in InGaN/GaN LEDs using the homoepitaxial substrate can be the main transport mechanism under low forward bias, consequentially leading to the improved forward leakage current characteristics.

Electrical Measurement of Recombination Lifetime in Blue Light Emitting Diodes

2004 ◽  
Vol 829 ◽  
Author(s):  
M. A. Awaah ◽  
R. Nana ◽  
K. Das
Keyword(s):  
Blue Light ◽  
Light Emitting Diodes ◽  
Deep Level ◽  
Electrical Measurement ◽  
High Concentration ◽  
Recombination Lifetime ◽  
Light Emitting ◽  
Radiative Processes ◽  
Current Voltage ◽  
Capacitance Voltage

ABSTRACTA recombination lifetime of approximately 25 ns was extracted from measured reverse recovery storage times in AlGaN/GaN/AlGaN double heterojunction blue light emitting diodes. This experimentally determined lifetime is expected to arise from a combination of radiative and non-radiative processes occurring in the diodes. The non-radiative processes are likely to be due the presence of a high concentration deep-states as identified from the current-voltage and capacitance-voltage measurements. Current-voltage characteristics of these diodes were highly non-ideal as indicated by high values of the ideality factor ranging from 3.0 – 7.0. Logarithmic plots of the forward characteristics indicated a space-charge-limited-current (SCLC) conduction in presence of a high density of “deep-level states” in the active region of the diodes. An analysis of these characteristics yielded an approximate density of these deep-level states as 2 × 1017/cm3. The density of deep-states extracted from capacitance-voltage measurements were in good agreement with that obtained from current-voltage measurements.

scholarly journals In vitro and in vivo Efficacy of New Blue Light Emitting Diode Phototherapy Compared to Conventional Halogen Quartz Phototherapy for Neonatal Jaundice

2005 ◽  
Vol 20 (1) ◽  
pp. 61 ◽  
Author(s):  
Yun Sil Chang ◽  
Jong Hee Hwang ◽  
Hyuk Nam Kwon ◽  
Chang Won Choi ◽  
Sun Young Ko ◽  
...  
Keyword(s):  
Blue Light ◽  
Neonatal Jaundice ◽  
Light Emitting Diode ◽  
In Vivo Efficacy ◽  
Light Emitting

scholarly journals Operando direct observation of spin-states and charge-trappings of blue light-emitting-diode materials in thin-film devices

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
Fumiya Osawa ◽  
Kazuhiro Marumoto
Keyword(s):  
Blue Light ◽  
High Performance ◽  
Density Functional ◽  
Light Emitting Diode ◽  
Green Light ◽  
Spin States ◽  
Light Emitting ◽  
Full Color ◽  
Color Displays ◽  
Materials Used

Abstract Spin-states and charge-trappings in blue organic light-emitting diodes (OLEDs) are important issues for developing high-device-performance application such as full-color displays and white illumination. However, they have not yet been completely clarified because of the lack of a study from a microscopic viewpoint. Here, we report operando electron spin resonance (ESR) spectroscopy to investigate the spin-states and charge-trappings in organic semiconductor materials used for blue OLEDs such as a blue light-emitting material 1-bis(2-naphthyl)anthracene (ADN) using metal–insulator–semiconductor (MIS) diodes, hole or electron only devices, and blue OLEDs from the microscopic viewpoint. We have clarified spin-states of electrically accumulated holes and electrons and their charge-trappings in the MIS diodes at the molecular level by directly observing their electrically-induced ESR signals; the spin-states are well reproduced by density functional theory. In contrast to a green light-emitting material, the ADN radical anions largely accumulate in the film, which will cause the large degradation of the molecule and devices. The result will give deeper understanding of blue OLEDs and be useful for developing high-performance and durable devices.

Optimization and evaluation of a blue light photoinitiating system for textile inkjet printing

2018 ◽  
Vol 89 (10) ◽  
pp. 1964-1974
Author(s):  
Yi Huang ◽  
Guangdong Sun ◽  
Yating Ji ◽  
Dapeng Li ◽  
Qinguo Fan ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diode ◽  
Absorption Efficiency ◽  
Polymerization Rate ◽  
Nozzle Clogging ◽  
Light Emitting ◽  
Custom Made ◽  
Light Curing ◽  
Set Up ◽  
Pigment Ink

A blue light curing process was developed to solve the nozzle clogging challenge commonly encountered in conventional textile pigment printing, by using camphorquinone (CQ) and ethyl-4-dimethylaminobenzoate (EDMAB) as a photoinitiator combination and substituting oligomers and monomers for a polymeric binder. High light absorption efficiency was insured by closely matching the spectrum of the photoinitiator with a custom-made blue light light-emitting diode set-up. Kinetic analyses of such a CQ/EDMAB system indicated that the maximum polymerization rate of the monomer was proportional to [PI]0.5 and [I0]0.5, while excessive high photoinitiator concentration (>1 wt%) will decrease the polymerization rate because of the “filter effect.” With optimized blue light curable pigment ink formula and irradiation conditions, the photocurable pigment printed fabrics exhibited uniform and vibrant colors, clear outlines, and excellent wet and dry rubbing fastness of grades 4 and 4–5, respectively.

scholarly journals Homogeneous ZnO nanowire arrays p-n junction for blue light-emitting diode applications

2019 ◽  
Vol 27 (16) ◽  
pp. A1207 ◽  
Author(s):  
Mingming Su ◽  
Tanglei Zhang ◽  
Jun Su ◽  
Zhao Wang ◽  
Yongming Hu ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diode ◽  
Nanowire Arrays ◽  
Zno Nanowire ◽  
Light Emitting ◽  
Zno Nanowire Arrays

Enhanced performances of InGaN/GaN-based blue light-emitting diode with InGaN/AlInGaN superlattice electron blocking layer

2014 ◽  
Vol 23 (6) ◽  
pp. 068502
Author(s):  
Xiang-Jing Zhuo ◽  
Jun Zhang ◽  
Dan-Wei Li ◽  
Han-Xiang Yi ◽  
Zhi-Wei Ren ◽  
...  
Keyword(s):  
Blue Light ◽  
Light Emitting Diode ◽  
Blocking Layer ◽  
Electron Blocking Layer ◽  
Light Emitting
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