Heavily Doped Single Quantum Wells and the Effective Mass

2017 ◽  
Vol 6 (2) ◽  
pp. 167-218 ◽  
Author(s):  
P. K. Das ◽  
P. Dutta ◽  
A. Halder ◽  
J. Pal ◽  
N. Debbarma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Single Quantum ◽  
Heavily Doped

Composition dependence of the in‐plane effective mass in lattice‐mismatched, strained Ga1−xInxAs/InP single quantum wells

1993 ◽  
Vol 63 (5) ◽  
pp. 657-659 ◽  
Author(s):  
B. K. Meyer ◽  
M. Drechsler ◽  
C. Wetzel ◽  
V. Härle ◽  
F. Scholz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Composition Dependence ◽  
Single Quantum

scholarly journals Effect of Inter-Well Coupling between 3C and 6H in-Grown Stacking Faults in 4H-SiC Epitaxial Layers

2011 ◽  
Vol 679-680 ◽  
pp. 314-317 ◽  
Author(s):  
Teddy Robert ◽  
Maya Marinova ◽  
Sandrine Juillaguet ◽  
Anne Henry ◽  
Efstathios K. Polychroniadis ◽  
...  
Keyword(s):  
Electric Field ◽  
Quantum Wells ◽  
Effective Mass ◽  
Stacking Faults ◽  
Type Ii ◽  
Mass Approximation ◽  
Natural Type ◽  
Heavily Doped ◽  
Excitonic Recombination ◽  
Different Parts

Both 3C and 6H stacking faults have been observed in a low doped 4H-SiC epitaxial layer grown in a hot-wall CVD reactor on a heavily doped (off-axis) 4H-SiC substrate. They appear differently on the different parts of sample, with energetic dispersion ranging from 3.01 eV to 2.52 eV. Since they behave as natural type-II quantum wells in the 4H-SiC matrix, the thickness dependence of the excitonic recombination is investigated using the standard effective mass approximation. The results are discussed in terms of built-in electric field and inter-well coupling effects.

Nonlinear optical properties in the laser-dressed two-level AlxGa1−xN/GaN single quantum well

2018 ◽  
Vol 32 (04) ◽  
pp. 1850032 ◽  
Author(s):  
Monalisa Panda ◽  
Tapaswini Das ◽  
B. K. Panda
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Mass ◽  
Nonlinear Optical ◽  
Energy Levels ◽  
Internal Electric Field ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Increase With Increase

The electronic states in the laser-dressed hexagonal and cubic Al[Formula: see text]Ga[Formula: see text]N/GaN single quantum wells are calculated using the effective mass equation. The hexagonal single quantum well contains an internal electric field due to spontaneous and piezoelectric polarizations. The effective mass equation is solved by the finite difference method. The energy levels in both cubic and hexagonal laser-dressed wells are found to increase with increase in laser dressing as the effective well widths in both the wells increase. The intersubband energy spacing between first excited state and ground state increases in the cubic quantum well, whereas it decreases in the hexagonal well due to the presence of internal electric field in it. Using the compact density matrix method with iterative procedure, first-, second- and third-order nonlinear optical susceptibilities in the laser-dressed quantum well are calculated taking only two levels. While the susceptibilities in the hexagonal well are found to get red shifted, the susceptibilities in the cubic well are blue shifted.

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy
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