Composition dependence of the in‐plane effective mass in lattice‐mismatched, strained Ga1−xInxAs/InP single quantum wells

1993 ◽  
Vol 63 (5) ◽  
pp. 657-659 ◽  
Author(s):  
B. K. Meyer ◽  
M. Drechsler ◽  
C. Wetzel ◽  
V. Härle ◽  
F. Scholz ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Composition Dependence ◽  
Single Quantum

Nonlinear optical properties in the laser-dressed two-level AlxGa1−xN/GaN single quantum well

2018 ◽  
Vol 32 (04) ◽  
pp. 1850032 ◽  
Author(s):  
Monalisa Panda ◽  
Tapaswini Das ◽  
B. K. Panda
Keyword(s):  
Electric Field ◽  
Quantum Well ◽  
Quantum Wells ◽  
Effective Mass ◽  
Nonlinear Optical ◽  
Energy Levels ◽  
Internal Electric Field ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Increase With Increase

The electronic states in the laser-dressed hexagonal and cubic Al[Formula: see text]Ga[Formula: see text]N/GaN single quantum wells are calculated using the effective mass equation. The hexagonal single quantum well contains an internal electric field due to spontaneous and piezoelectric polarizations. The effective mass equation is solved by the finite difference method. The energy levels in both cubic and hexagonal laser-dressed wells are found to increase with increase in laser dressing as the effective well widths in both the wells increase. The intersubband energy spacing between first excited state and ground state increases in the cubic quantum well, whereas it decreases in the hexagonal well due to the presence of internal electric field in it. Using the compact density matrix method with iterative procedure, first-, second- and third-order nonlinear optical susceptibilities in the laser-dressed quantum well are calculated taking only two levels. While the susceptibilities in the hexagonal well are found to get red shifted, the susceptibilities in the cubic well are blue shifted.

Heavily Doped Single Quantum Wells and the Effective Mass

2017 ◽  
Vol 6 (2) ◽  
pp. 167-218 ◽  
Author(s):  
P. K. Das ◽  
P. Dutta ◽  
A. Halder ◽  
J. Pal ◽  
N. Debbarma ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Effective Mass ◽  
Single Quantum ◽  
Heavily Doped

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy

Magneto-optics of dense electron plasmas in modulation-doped GaInAs/AlInAs single quantum wells

1994 ◽  
Vol 37 (4-6) ◽  
pp. 919-922
Author(s):  
Y.-H. Zhang ◽  
J.L. Merz ◽  
M. Potemski ◽  
J.C. Maan ◽  
K. Ploog
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Electron Plasmas
Sign in / Sign up

Export Citation Format

Share Document