Influence of Etching Current Density on Morphology of Porous Silicon Layer and the Electrical Properties of Sn/PS/p-Si/Al Double Junction

2014 ◽  
Vol 3 (6) ◽  
pp. 470-474
Author(s):  
Hasan A. Hadi ◽  
Intesar H. Hashim ◽  
Issam M. Ibrahim ◽  
Nadir F. Hububi
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Current Density ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Ps I ◽  
Double Junction

I-V and Surface Topography Study of Nanostructure Porous Silicon Layer Prepared by Electrochemical Etching

2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Surface Topography ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Force Microscopy ◽  
Atomic Force ◽  
Current Voltage ◽  
P Type

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).

Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer

2001 ◽  
Vol 90 (8) ◽  
pp. 4184-4190 ◽  
Author(s):  
L. A. Balagurov ◽  
S. C. Bayliss ◽  
A. F. Orlov ◽  
E. A. Petrova ◽  
B. Unal ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer

A Systematic Study of the Structural and Luminescence Properties of P-Type Porous Silicon

1995 ◽  
Vol 378 ◽  
Author(s):  
H. Yoon ◽  
M. S. Goorsky
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Storage Time ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Luminescence Properties ◽  
Strained Layers ◽  
X Ray ◽  
P Type ◽  
The Relationship

AbstractThe structural and luminescence properties of (001) p-type porous silicon samples (p∼0.1-0.2 Ω•cm) fabricated electrochemically under various conditions were investigated using high resolution double and triple axis diffraction and photoluminescence spectroscopy. We show the sensitivity of the structure of the porous silicon to the current density in the range of 10-50 mA/cm2, HF acid concentration in the range of 15% - 30%, and the evolution of the structure with time. We have found a systematic dependence of the amount of strain in the porous silicon layer (PSL) on the current density. The effect of the HF concentration is such that at 25% and 30% HF, PSLs are formed which are crystalline and strained, but at a lower HF concentration (15%), strained layers are not formed. The perpendicular strain in the layer increases linearly with storage time but the in-plane lattice constant of the porous silicon remains matched to the substrate. Further, we utilized x-ray reciprocal space maps to observe that, with storage time, there is an increase in the diffuse scattering from the PSL due to an increase in the range of tilts in the layer. Room temperature photoluminescence emission was observed for all 15% and 25% HF samples, but not for all 30% HF samples. Higher peak luminescence energy was obtained with lower HF concentration. Finally, we note the relationship between the strain in the PSL and the luminescence properties.

scholarly journals Porous silicon prepared by photo electrochemical etching assisted by laser

2019 ◽  
Vol 15 (32) ◽  
pp. 122-129
Author(s):  
Falah A-H Mutlak
Keyword(s):  
Porous Silicon ◽  
Current Density ◽  
Crystalline Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Maximum Diameter ◽  
Face Centered Cubic ◽  
The Face ◽  
Face Centered

Porous silicon (PS) layers are prepared by anodization fordifferent etching current densities. The samples are thencharacterized the nanocrystalline porous silicon layer by X-RayDiffraction (XRD), Atomic Force Microscopy (AFM), FourierTransform Infrared (FTIR). PS layers were formed on n-type Siwafer. Anodized electrically with a 20, 30, 40, 50 and 60 mA/cm2current density for fixed 10 min etching times. XRD confirms theformation of porous silicon, the crystal size is reduced towardnanometric scale of the face centered cubic structure, and peakbecomes a broader with increasing the current density. The AFMinvestigation shows the sponge like structure of PS at the lowercurrent density porous begin to form on the crystalline silicon, whenthe current density increases, pores with maximum diameter areformed as observed all over the surface. FTIR spectroscopy shows ahigh density of silicon bonds, it is very sensitive to the surroundingambient air, and it is possible to oxidation spontaneously.

Electrical properties study of porous silicon layer prepared by electrochemical etching

2006 ◽  
Vol 28 (1-2) ◽  
pp. 143-146 ◽  
Author(s):  
Andrzej Korcala ◽  
Wacław Bała ◽  
Artur Bratkowski ◽  
Piotr Borowski ◽  
Zbigniew Łukasiak
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer

Improvement of photoluminescence and electrical properties of porous silicon layer treated with lanthanum

2012 ◽  
Vol 132 (10) ◽  
pp. 2572-2576 ◽  
Author(s):  
Malek Atyaoui ◽  
Wissem Dimassi ◽  
Marouan Khalifa ◽  
Radhouane Chtourou ◽  
Hatem Ezzaouia
Keyword(s):  
Electrical Properties ◽  
Porous Silicon ◽  
Silicon Layer ◽  
Porous Silicon Layer

scholarly journals The effect of current density on the structures and photoluminescence of n-type porous silicon

2019 ◽  
Vol 15 (34) ◽  
pp. 15-28
Author(s):  
Isam M. Ibrahim
Keyword(s):  
Porous Silicon ◽  
Band Gap ◽  
Current Density ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Porous Silicon Layer ◽  
Etching Time ◽  
Etching Technique ◽  
Force Microscopy ◽  
Homogeneous Pattern

Porous silicon (PS) layers were formed on n-type silicon (Si) wafers using Photo- electrochemical Etching technique (PEC) was used to produce porous silicon for n-type with orientation of (111). The effects of current density were investigated at: (10, 20, 30, 40, and50) mA/cm2 with etching time: 10min. X-ray diffraction studies showed distinct variations between the fresh silicon surface and the synthesized porous silicon. The maximum crystal size of Porous Silicon is (33.9nm) and minimum is (2.6nm) The Atomic force microscopy (AFM) analysis and Field Emission Scanning Electron Microscope (FESEM) were used to study the morphology of porous silicon layer. AFM results showed that root mean square (RMS) of roughness and the grain size of porous silicon decreased as etching current density increased and FESEM showed that a homogeneous pattern and confirms the formation of uniform porous silicon. The chemical bonding and structure were investigated by using Fourier transformation infrared spectroscopy (FTIR). The band gap of the samples obtained from photoluminescence (PL). These results showed that the band gap of porous silicon increase with increasing porosity.

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