Electrical properties of metal/porous silicon/p-Si structures with thin porous silicon layer

2001 ◽  
Vol 90 (8) ◽  
pp. 4184-4190 ◽  
Author(s):  
L. A. Balagurov ◽  
S. C. Bayliss ◽  
A. F. Orlov ◽  
E. A. Petrova ◽  
B. Unal ◽  
...  
2012 ◽  
Vol 576 ◽  
pp. 519-522 ◽  
Author(s):  
Fadzilah Suhaimi Husairi ◽  
Maslihan Ain Zubaidah ◽  
Shamsul Faez M. Yusop ◽  
Rusop Mahmood Mohamad ◽  
Saifolah Abdullah

This article reports on the electrical properties of porous silicon nanostructures (PSiNs) in term of its surface topography. In this study, the PsiNs samples were prepared by using different current density during the electrochemical etching of p-type silicon wafer. PSiNs has been investigated its electrical properties and resistances for different surface topography of PSiNs via current-voltage (I-V) measurement system (Keithley 2400) while its physical structural properties was investigated by using atomic force microscopy (AFM-XE100).


2006 ◽  
Vol 28 (1-2) ◽  
pp. 143-146 ◽  
Author(s):  
Andrzej Korcala ◽  
Wacław Bała ◽  
Artur Bratkowski ◽  
Piotr Borowski ◽  
Zbigniew Łukasiak

2012 ◽  
Vol 132 (10) ◽  
pp. 2572-2576 ◽  
Author(s):  
Malek Atyaoui ◽  
Wissem Dimassi ◽  
Marouan Khalifa ◽  
Radhouane Chtourou ◽  
Hatem Ezzaouia

2020 ◽  
Vol 12 (4) ◽  
pp. 04020-1-04020-5
Author(s):  
A. P. Oksanich ◽  
◽  
S. E. Pritchin ◽  
M. A. Mashchenko ◽  
A. Yu. Bobryshev ◽  
...  

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