Analysis of Leakage Power Reduction in Dual-Vth Technologies in the Presence of Large Threshold Voltage Variation

2006 ◽  
Vol 2 (1) ◽  
pp. 1-7 ◽  
Author(s):  
Wei-Shen Wang ◽  
Michael Liu ◽  
Michael Orshansky
Keyword(s):  
Threshold Voltage ◽  
Power Reduction ◽  
Leakage Power ◽  
Voltage Variation

Leakage power evaluation of FinFET-based FPGA cluster under threshold voltage variation

2016 ◽  
Author(s):  
Mohamed Mohie El-Din ◽  
Hossam A. H. Fahmy ◽  
Yehea Ismail ◽  
Noha Gamal ◽  
Hassan Mostafa
Keyword(s):  
Threshold Voltage ◽  
Leakage Power ◽  
Voltage Variation ◽  
Power Evaluation

LEAKAGE POWER REDUCTION USING MULTI MODAL DRIVEN HIERARCHICAL POWER MODE SWITCHES

2018 ◽  
Vol 6 (2) ◽  
pp. 1
Author(s):  
SEKHAR REDDY M. CHANDRA ◽  
REDDY P. RAMANA ◽  
◽  
Keyword(s):  
Power Reduction ◽  
Leakage Power ◽  
Power Mode

scholarly journals Exploring the limits of leakage power reduction in caches

2005 ◽  
Vol 2 (3) ◽  
pp. 221-246 ◽  
Author(s):  
Yan Meng ◽  
Timothy Sherwood ◽  
Ryan Kastner
Keyword(s):  
Power Reduction ◽  
Leakage Power

scholarly journals Ground Plane Impact on Performance of Relaxed Ge FinFETs

2019 ◽  
Vol 14 (1) ◽  
pp. 1-6
Author(s):  
Alberto Vinícius Oliveira ◽  
Guilherme Vieira Gonçalves ◽  
Paula Ghedini Der Agopian ◽  
João Antonio Martino ◽  
Jérôme Mitard ◽  
...  
Keyword(s):  
Threshold Voltage ◽  
Computer Aided Design ◽  
Doping Concentration ◽  
Ground Plane ◽  
Subthreshold Swing ◽  
Voltage Variation ◽  
Electrostatic Coupling ◽  
P Type ◽  
Aided Design ◽  
Channel Region

The implementation of a barrier potential layer underneath the channel region, well known as Ground Plane (GP) implantation, and its influence on the performance of relaxed germanium pFinFET devices is investigated in this manuscript. This study aims to explain the fin width dependence of the threshold voltage from experimental data and evaluates the ground plane doping concentration and its depth influence on relaxed p-type channel germanium FinFET parameters, as threshold voltage, transconductance and subthreshold swing, through Technology Computer-Aided Design (TCAD) numerical simulations. The threshold voltage variation reaches up to 80 mV from the narrowest device to the widest one, considering the studied range of ground plane doping concentration. Concerning the subthreshold swing parameter, neither the GP doping concentration, nor its depth play a significant role since the electrostatic coupling is predominant.

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