Thermal Annealing Effect on the Conversion Efficiency of Si Solar Cells

2018 ◽  
Vol 13 (10) ◽  
pp. 1557-1563 ◽  
Author(s):  
Jonghun Mun ◽  
Srikanta Palei ◽  
Rajkumar Sahu ◽  
Jaeho Choi ◽  
Keunjoo Kim

We investigated the effect of thermal annealing on the performances of Si solar cells. The Si solar cells were fabricated on p-type microtextured Si wafers using a standard cell fabrication process. The fabricated cells were annealed at 250 °C for 60, 80, and 90 min using a halogen lamp heater in N2 ambient. The annealed sample with a time of 60 min showed enhanced optical properties of light absorption, quantum efficiency, and minority carrier lifetime but did not show enhanced cell conversion efficiency. However, while the cell annealed for 90 min showed different optical properties, it showed the highest conversion efficiency of 17.35% compared to the reference cell of 17.14%, indicating the total recovery of the light soaking effect. We further analyzed the hydrogen-related chemical bonding structures for the dopant activation throughout hydrogen diffusion and the electroluminescence by a radiative recombination of a p–n junction.

2021 ◽  
Author(s):  
Xianhao Zhao ◽  
Tianyu Tang ◽  
Quan Xie ◽  
like gao ◽  
Limin Lu ◽  
...  

The cesium lead halide perovskites are regarded as effective candidates for light-absorbing materials in solar cells, which have shown excellent performances in experiments such as promising energy conversion efficiency. In...


2012 ◽  
Vol 2012 ◽  
pp. 1-5 ◽  
Author(s):  
Jiří Vanek ◽  
Jan Dolensky ◽  
Zdenek Chobola ◽  
Mirek Luňák ◽  
Aleš Poruba

This paper brings the comparison of solar cell conversion efficiency and results from a noise spectroscopy and microplasma presence to evaluate the solar cell technology. Three sets of monocrystalline silicon solar cells (c-Si) varying in front side phosphorus doped emitters were produced by standard screen-printing technique. From the measurements it follows that the noise spectral density related to defects is of 1/ftype and its magnitude. It has been established that samples showing low noise feature high-conversion efficiency. The best results were reached for a group solar cells with selective emitter structure prepared by double-phosphorus diffusion process.


2014 ◽  
Vol 2014 ◽  
pp. 1-4
Author(s):  
Kuen-Hsien Wu ◽  
Chia-Chun Tang

Trenched electrodes were proposed to enhance the short-circuit current and conversion efficiency of polycrystalline-silicon (poly-Si) solar cells with nanoporous silicon (NPS) surface layers. NPS films that served as textured surface layers were firstly prepared on heavily doped p+-type (100) poly-Si wafers by anodic etching process. Interdigitated trenches were formed in the NPS layers by a reactive-ion-etch (RIE) process and Cr/Al double-layered metal was then deposited to fill the trenches and construct trenched-electrode-contacts (TEC’s). Cells with TEC structures (called “TEC cells”) obtained 5.5 times higher short-circuit current than that of cells with planar electrode contacts (called “non-TEC cells”). Most significantly, a TEC cell achieved 8 times higher conversion efficiency than that of a non-TEC cell. The enhanced short-circuit current and conversion efficiency in TEC cells were ascribed to the reduced overall series resistance of devices. In a TEC cell, trenched electrodes provided photocurrent flowing routes that directly access the poly-Si substrates without passing through the high resistive NPS layers. Therefore, the application of NPS surface layers with trenched electrodes is a novel approach to development of highly efficient poly-Si solar cells.


RSC Advances ◽  
2015 ◽  
Vol 5 (124) ◽  
pp. 102682-102688 ◽  
Author(s):  
Ming Hong ◽  
Tongtong Xuan ◽  
Jiaqing Liu ◽  
Ziyao Jiang ◽  
Yiwei Chen ◽  
...  

CIS/ZnS QDs were synthesized by microwave irradiation in air. The fabricated QDs/PMMA composite films were first applied to Si solar cells to improve the conversion efficiency by 3.8%.


2013 ◽  
Vol 827 ◽  
pp. 49-53 ◽  
Author(s):  
Qi Wang ◽  
Hai Na Mo ◽  
Zi Qiao Lou ◽  
Ke Meng Yang ◽  
Yue Sun ◽  
...  

We have designed lateral contact thin film silicon-based solar cells with and without one-dimensional photonic crystals as back surface field layer. The photonic crystal comprises a distributed Bragg reflector (DBR) for trapping the light. Simulations demonstrate that energy conversion efficiency and short circuit current ISCfor c-Si solar cells with the photonic crystal structure are increased to 21.11% and 27.0 mA, respectively, from 18.33% and 22.8mA of the one without photonic crystal. In addition, the effects of DBRs consisting of different materials are investigated in our simulations. When the refractive index difference between sub-layers of the DBR is larger, the forbidden band width is broader, the reflectance of the DBR is higher, and more photons are reflected and trapped into the active region, then the absorption efficiency and the energy conversion efficiency of the solar cell are both increased. The bigger the refractive index difference of the DBRs sub-layers is, the broader the forbidden band width is. In addition, a-Si solar cells with and without DBR are also discussed.


2017 ◽  
Vol 122 (2) ◽  
pp. 023106 ◽  
Author(s):  
Hitoshi Tampo ◽  
Kang Min Kim ◽  
Shinho Kim ◽  
Hajime Shibata ◽  
Shigeru Niki

2010 ◽  
Vol 2010 ◽  
pp. 1-6 ◽  
Author(s):  
Yuang-Tung Cheng ◽  
Jyh-Jier Ho ◽  
William J. Lee ◽  
Song-Yeu Tsai ◽  
Yung-An Lu ◽  
...  

The subject of the present work is to develop a simple and effective method of enhancing conversion efficiency in large-size solar cells using multicrystalline silicon (mc-Si) wafer. In this work, industrial-type mc-Si solar cells with area of125×125 mm2were acid etched to produce simultaneouslyPOCl3emitters and silicon nitride deposition by plasma-enhanced chemical vapor deposited (PECVD). The study of surface morphology and reflectivity of different mc-Si etched surfaces has also been discussed in this research. Using our optimal acid etching solution ratio, we are able to fabricate mc-Si solar cells of 16.34% conversion efficiency with double layers silicon nitride (Si3N4) coating. From our experiment, we find that depositing double layers silicon nitride coating on mc-Si solar cells can get the optimal performance parameters. Open circuit (Voc) is 616 mV, short circuit current (Jsc) is 34.1 mA/cm2, and minority carrier diffusion length is 474.16 μm. The isotropic texturing and silicon nitride layers coating approach contribute to lowering cost and achieving high efficiency in mass production.


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