Energy Level Engineering in InxGa1–xAs/GaAs Quantum Dots Applicable to Quantum Dot-Lasers by Changing the Stoichiometric Percentage

2016 ◽  
Vol 11 (3) ◽  
pp. 315-322 ◽  
Author(s):  
Mahdi Ahmadi Borji ◽  
Esfandiar Rajaei
Keyword(s):  
Quantum Dots ◽  
Energy Level ◽  
Quantum Dot ◽  
Quantum Dot Lasers

Theoretical Study on the Transport through a Quantum Dots Array with a Side Quantum Dot

2011 ◽  
Vol 340 ◽  
pp. 331-336
Author(s):  
Hai Tao Yin ◽  
Xiao Jie Liu ◽  
Wei Long Wan ◽  
Cheng Bao Yao ◽  
Li Na Bai ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Green Function ◽  
Energy Level ◽  
Quantum Dot ◽  
Quantum Interference ◽  
Theoretical Study ◽  
Equation Of Motion ◽  
Function Technique ◽  
Motion Method ◽  
Linear Conductance

We studied transport properties through a noninteracting quantum dots array with a side quantum dot employing the equation of motion method and Green function technique. The linear conductance has been calculated numerically. It is shown that an antiresonance always pinned at the energy level of side quantum dot. The conductance develops Fano line shape when the side quantum dot level is not aligned with that of the quantum dots in the array due to quantum interference through different channels.

Self-assembled quantum dots, wires and quantum-dot lasers

2001 ◽  
Vol 227-228 ◽  
pp. 1132-1139 ◽  
Author(s):  
Zhan-Guo Wang ◽  
Yong-Hai Chen ◽  
Feng-Qi Liu ◽  
Bop Xu
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Self Assembled

Discrete energy level separation and the threshold temperature dependence of quantum dot lasers

2000 ◽  
Vol 77 (4) ◽  
pp. 466-468 ◽  
Author(s):  
Oleg B. Shchekin ◽  
Gyoungwon Park ◽  
Diana L. Huffaker ◽  
Dennis G. Deppe
Keyword(s):  
Energy Level ◽  
Quantum Dot ◽  
Temperature Dependence ◽  
Threshold Temperature ◽  
Quantum Dot Lasers ◽  
Discrete Energy ◽  
Discrete Energy Level

Characteristics of 1.3μm quantum-dot lasers with high-density and high-uniformity quantum dots

2006 ◽  
Vol 89 (17) ◽  
pp. 171122 ◽  
Author(s):  
Takeru Amano ◽  
Takeyoshi Sugaya ◽  
Kazuhiro Komori
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Density ◽  
Quantum Dot Lasers ◽  
High Uniformity

Comparison of single-layer and bilayer InAs/GaAs quantum dots with a higher InAs coverage

2010 ◽  
Vol 18 (3) ◽  
Author(s):  
S. Sengupta ◽  
S.Y. Shah ◽  
N. Halder ◽  
S. Chakrabarti
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
Emission Line ◽  
Size Distribution ◽  
Single Layer ◽  
Quantum Dot Lasers ◽  
Narrow Linewidth ◽  
Inas Quantum Dots ◽  
Monolayer Coverage ◽  
Narrow Emission

AbstractEpitaxially grown self-assembled InAs quantum dots (QDs) have found applications in optoelectronics. Efforts are being made to obtain efficient quantum-dot lasers operating at longer telecommunication wavelengths, specifically 1.3 μm and 1.55 μm. This requires narrow emission linewidth from the quantum dots at these wavelengths. In InAs/GaAs single layer quantum dot (SQD) structure, higher InAs monolayer coverage for the QDs gives rise to larger dots emitting at longer wavelengths but results in inhomogeneous dot-size distribution. The bilayer quantum dot (BQD) can be used as an alternative to SQDs, which can emit at longer wavelengths (1.229 μm at 8 K) with significantly narrow linewidth (∼16.7 meV). Here, we compare the properties of single layer and bilayer quantum dots grown with higher InAs monolayer coverage. In the BQD structure, only the top QD layer is covered with increased (3.2 ML) InAs monolayer coverage. The emission line width of our BQD sample is found to be insensitive towards post growth treatments.

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