Bringing quantum dots up to speed [Breaking the phonon bottleneck with high-speed modulation of quantum-dot lasers]

2000 ◽  
Vol 16 (1) ◽  
pp. 17-23 ◽  
Author(s):  
D. Klotzkin ◽  
P. Bhattacharya
Keyword(s):  
Quantum Dots ◽  
Quantum Dot ◽  
High Speed ◽  
Quantum Dot Lasers ◽  
Phonon Bottleneck ◽  
Speed Modulation ◽  
High Speed Modulation

High-speed modulation in 1.3-µm InAs/GaAs high-density quantum dot lasers

2010 ◽  
Author(s):  
Yu Tanaka ◽  
Kan Takada ◽  
Mitsuru Ishida ◽  
Yoshiaki Nakata ◽  
Tsuyoshi Yamamoto ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Speed ◽  
High Density ◽  
Quantum Dot Lasers ◽  
Speed Modulation ◽  
High Speed Modulation

Carrier dynamics and high-speed modulation properties of tunnel injection InGaAs-GaAs quantum-dot lasers

2003 ◽  
Vol 39 (8) ◽  
pp. 952-962 ◽  
Author(s):  
Pallab Bhattacharya ◽  
Siddhartha Ghosh ◽  
Sameer Pradhan ◽  
Jasprit Singh ◽  
Zong-Kwei Wu ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Speed ◽  
Carrier Dynamics ◽  
Quantum Dot Lasers ◽  
Speed Modulation ◽  
Gaas Quantum Dot ◽  
High Speed Modulation ◽  
Tunnel Injection

scholarly journals Heterogeneously Integrated Photonic Chip on Lithium Niobate Thin-Film Waveguide

Crystals ◽  
2021 ◽  
Vol 11 (11) ◽  
pp. 1376
Author(s):  
Xing Wei ◽  
Samuel Kesse
Keyword(s):  
Thin Film ◽  
Quantum Dots ◽  
Lithium Niobate ◽  
High Speed ◽  
Single Photon ◽  
Photon Flux ◽  
Speed Modulation ◽  
Electro Optic ◽  
Quantum Photonics ◽  
High Speed Modulation

Lithium niobate thin film represents as an ideal material substrate for quantum photonics due to its strong electro-optic effect and high-speed modulation capability. Here, we propose a novel platform which heterogeneously integrates single self-assembled InAs/GaAs quantum dots for a single-photon source on a lithium niobate photonic chip. The InAs/GaAs quantum dots can be transferred to the lithium niobate waveguide via a substrate transfer procedure with nanometer precision and be integrated through van der Waals force. A down-tapered structure is designed and optimized to deliver the photon flux generated from the InAs quantum dots embedded in a GaAs waveguide to the lithium niobate waveguide with an overall efficiency of 42%. In addition, the electro-optical effect is used to tune, and therefore to tune the beam splitting ratio of the integrated lithium niobate directional coupler, which can simultaneously route multiple photons to different spatial modes, and subsequently fan out through grating couplers to achieve single-photon sub-multiplexing. The proposed device opens up novel opportunities for achieving multifunctional hybrid integrated photonic chips.

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