Concept of Internal Mixing in Semiconductor Lasers and Optical Amplifiers for Room-Temperature Generation of Tunable Continuous TeraHertz Waves

2007 ◽  
Vol 2 (1) ◽  
pp. 1-10 ◽  
Author(s):  
Alvydas Lisauskas ◽  
Mark Dias ◽  
Sebastian Belz ◽  
Hartmut G. Roskos ◽  
Michael Feiginov
Keyword(s):  
Semiconductor Lasers ◽  
Room Temperature ◽  
Optical Amplifiers ◽  
Terahertz Waves ◽  
Internal Mixing

scholarly journals Investigation on the origin of terahertz waves generated by dc-biased multimode semiconductor lasers at room temperature

2008 ◽  
Vol 93 (24) ◽  
pp. 241110 ◽  
Author(s):  
Sylwester Latkowski ◽  
Frederic Surre ◽  
Ramon Maldonado-Basilio ◽  
Pascal Landais
Keyword(s):  
Semiconductor Lasers ◽  
Room Temperature ◽  
Terahertz Waves

scholarly journals Fabrication of Graphene Nanomesh FET Terahertz Detector

Micromachines ◽  
2021 ◽  
Vol 12 (6) ◽  
pp. 641
Author(s):  
Yuan Zhai ◽  
Yi Xiang ◽  
Weiqing Yuan ◽  
Gang Chen ◽  
Jinliang Shi ◽  
...  
Keyword(s):  
Room Temperature ◽  
Energy Gap ◽  
Coupling Efficiency ◽  
High Sensitivity ◽  
Fabrication Process ◽  
Monolayer Graphene ◽  
Terahertz Waves ◽  
Wet Process ◽  
Graphene Nanomesh ◽  
Thz Detector

High sensitivity detection of terahertz waves can be achieved with a graphene nanomesh as grating to improve the coupling efficiency of the incident terahertz waves and using a graphene nanostructure energy gap to enhance the excitation of plasmon. Herein, the fabrication process of the FET THz detector based on the rectangular GNM (r-GNM) is designed, and the THz detector is developed, including the CVD growth and the wet-process transfer of high quality monolayer graphene films, preparation of r-GNM by electron-beam lithography and oxygen plasma etching, and the fabrication of the gate electrodes on the Si3N4 dielectric layer. The problem that the conductive metal is easy to peel off during the fabrication process of the GNM THz device is mainly discussed. The photoelectric performance of the detector was tested at room temperature. The experimental results show that the sensitivity of the detector is 2.5 A/W (@ 3 THz) at room temperature.

Mid-infrared (8.5 μm) semiconductor lasers operating at room temperature

1997 ◽  
Vol 9 (3) ◽  
pp. 294-296 ◽  
Author(s):  
C. Sirtori ◽  
J. Faist ◽  
F. Capasso ◽  
D.L. Sivco ◽  
A.L. Hutchinson ◽  
...  
Keyword(s):  
Semiconductor Lasers ◽  
Room Temperature ◽  
Mid Infrared

SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATURE

1971 ◽  
Vol 18 (9) ◽  
pp. 403-405 ◽  
Author(s):  
B. I. Miller ◽  
J. E. Ripper ◽  
J. C. Dyment ◽  
E. Pinkas ◽  
M. B. Panish
Keyword(s):  
Semiconductor Lasers ◽  
Room Temperature
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