SEMICONDUCTOR LASERS OPERATING CONTINUOUSLY IN THE ``VISIBLE'' AT ROOM TEMPERATURE

1971 ◽  
Vol 18 (9) ◽  
pp. 403-405 ◽  
Author(s):  
B. I. Miller ◽  
J. E. Ripper ◽  
J. C. Dyment ◽  
E. Pinkas ◽  
M. B. Panish
1997 ◽  
Vol 9 (3) ◽  
pp. 294-296 ◽  
Author(s):  
C. Sirtori ◽  
J. Faist ◽  
F. Capasso ◽  
D.L. Sivco ◽  
A.L. Hutchinson ◽  
...  

1997 ◽  
Vol 25 (7) ◽  
pp. 504-509
Author(s):  
Norikazu NAKAYAMA ◽  
Akira ISHIBASHI ◽  
Naoya EGUCHI

Author(s):  
J.I. Malin ◽  
C.L. Felix ◽  
J.R. Meyer ◽  
C.A. Hoffman ◽  
J.F. Pinto ◽  
...  

2007 ◽  
Vol 06 (03n04) ◽  
pp. 203-207 ◽  
Author(s):  
DAN BOTEZ

Intersubband quantum-box (IQB) lasers, that is, devices consisting of 2D arrays of single-stage intersubband QB emitters, are proposed, as an alternative to 30-stage quantum-cascade (QC) devices, as sources for efficient room-temperature (RT) emission in the mid- and far-IR (3–5 and 8–12 μm) wavelength ranges. Preliminary results include: (1) the realization of the first mid-IR (λ = 4.7 μ m ) single-stage emitters operating at RT; (2) etch-and-regrowth at the nanoscale level by employing in situ gas etching and MOCVD regrowth; (3) the formation of 30 nm-diameter SiO 2 posts on 80 nm centers, thus forming the mask for the fabrication of IQBs via in situ etch and regrowth.


2021 ◽  
Author(s):  
Kuan-Ying Huang ◽  
Yao-Lun Liu ◽  
Chu-Chun Wu ◽  
Bo-Jen Hsiao ◽  
Ce-Fang Shih ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document