In-Situ Stress Shift in Cu Thin Films Caused by Deposition Interruptions: The Effect of Grain Size

2017 ◽  
Vol 17 (6) ◽  
pp. 4082-4086
Author(s):  
Seri Lee ◽  
Youngman Kim
Keyword(s):  
2013 ◽  
Vol 25 (11) ◽  
pp. 2826-2830
Author(s):  
李静平 Li Jingping ◽  
方明 Fang Ming ◽  
贺洪波 He Hongbo ◽  
邵建达 Shao Jianda ◽  
李朝阳 Li Zhaoyang

2018 ◽  
Vol 52 (21) ◽  
pp. 12573-12582 ◽  
Author(s):  
Jonathan K. Challis ◽  
Kevin M. Stroski ◽  
Kim H. Luong ◽  
Mark L. Hanson ◽  
Charles S. Wong

1997 ◽  
Vol 97 (1-3) ◽  
pp. 206-211 ◽  
Author(s):  
G. Moulard ◽  
G. Contoux ◽  
G. Gardet ◽  
G. Motyl ◽  
M. Courbon

2000 ◽  
Vol 128-129 ◽  
pp. 474-478 ◽  
Author(s):  
C Fitz ◽  
W Fukarek ◽  
A Kolitsch ◽  
W Möller

2007 ◽  
Vol 316 (2) ◽  
pp. e158-e161 ◽  
Author(s):  
F. Albertini ◽  
L. Nasi ◽  
F. Casoli ◽  
S. Fabbrici ◽  
P. Luches ◽  
...  

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Nakamura ◽  
T. Akasaka ◽  
D. He ◽  
I. Shimizu

ABSTRACTA systematic study was performed to fabricate poly-Si thin films on glass substrates. Amorphous tissues were efficiently removed by forming a textured structure with the aid of atomic hydrogen. According to the real-time observation by spectroscopic ellipsometry(SE), the grain growth was enhanced by permeation of atomic hydrogen into the sub-surface. Hall measurements were made over a rather wide temperature range: 100 K--350 K. A rather high Hall mobility of 20 cm2/Vs or more was obtained at room temperature due to the reduction of amorphous tissues remaining at grain boundaries.


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