Control of Grain Size and Texture of Poly-Si with Atomic Hydrogen Under In Situ Ellipsometric Observation

1994 ◽  
Vol 358 ◽  
Author(s):  
K. Nakamura ◽  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Systematic Study ◽  
Atomic Hydrogen ◽  
Room Temperature ◽  
Glass Substrates ◽  
Time Observation ◽  
Real Time Observation ◽  
High Hall Mobility

ABSTRACTA systematic study was performed to fabricate poly-Si thin films on glass substrates. Amorphous tissues were efficiently removed by forming a textured structure with the aid of atomic hydrogen. According to the real-time observation by spectroscopic ellipsometry(SE), the grain growth was enhanced by permeation of atomic hydrogen into the sub-surface. Hall measurements were made over a rather wide temperature range: 100 K--350 K. A rather high Hall mobility of 20 cm2/Vs or more was obtained at room temperature due to the reduction of amorphous tissues remaining at grain boundaries.

Real-Time Observation of Ti Silicide Epitaxial Islands Growth with the Photoelectron Emission Microscopy

1998 ◽  
Vol 533 ◽  
Author(s):  
W. Yang ◽  
H. Ade ◽  
R. J. Nemanich
Keyword(s):  
Elevated Temperature ◽  
Real Time ◽  
Electron Emission ◽  
Room Temperature ◽  
Island Growth ◽  
Photoelectron Emission ◽  
Emission Microscopy ◽  
Time Observation ◽  
Real Time Observation

AbstractThe formation of nanoscale Ti silicide islands was observed by Photo-electron emission microscopy (PEEM). The islands were prepared by deposition of an ultrathin Ti (3–12ML) on Si(001) at room temperature and at an elevated temperature of 950°C. The island formation was initiated by in situ annealing to 1150° C. It was observed that initially Ti silicide islands form while longer annealing indicates some islands move and coalesce with other islands. Most of the islands are similar in size and have relatively uniform separation. Also, it was shown that for continued Ti deposition at a temperature of 950°C, the density of islands did not increase. However, islands grew together when their perimeter lines touch each other. The results are described in terms of island growth processes of coalescence and ripening.

Fabrication of Polycrystalline Silicon on Glass from Fluorinated Precursors with the Aid of Atomic Hydrogen

1995 ◽  
Vol 403 ◽  
Author(s):  
T. Akasaka ◽  
D. He ◽  
I. Shimizu
Keyword(s):  
Thin Films ◽  
Atomic Hydrogen ◽  
Polycrystalline Silicon ◽  
In Situ Observation ◽  
Layer By Layer ◽  
High Quality ◽  
Deposition Parameters ◽  
Columnar Grains ◽  
Step Growth

AbstractHigh quality polycrystalline silicon was made on glass from fluorinated precursors by two step growth, i.e., (1) formation of seed crystals on glass by layer-by-layer(LL) technique and (2) grain-growth on the seeds. In LL technique, deposition of ultra-thin films and treatment with atomic hydrogen was repeated alternately. Columnar grains with 200 nm dia were grown epitaxy-like on the seeds by optimizing the deposition parameters under in situ observation with spectroscopic ellipsometry.

Real-Time Observation of Platinum Redispersion on Ceria-Based Oxide by In-situ Turbo-XAS in Fluorescence Mode

2007 ◽  
Author(s):  
Yasutaka Nagai ◽  
Nobuyuki Takagi ◽  
Yasuo Ikeda ◽  
Kazuhiko Dohmae ◽  
Toshitaka Tanabe ◽  
...  
Keyword(s):  
Real Time ◽  
Time Observation ◽  
Real Time Observation

Study on preparing PLT(28) thin film and its electro-optic effect

1998 ◽  
Vol 13 (5) ◽  
pp. 1266-1270 ◽  
Author(s):  
Ai-Li Ding ◽  
Wei-Gen Luo ◽  
P. S. Qiu ◽  
J. W. Feng ◽  
R. T. Zhang
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Magnetron Sputtering ◽  
Faraday Effect ◽  
The Other ◽  
Ceramic Powders ◽  
Glass Substrates ◽  
Annealing Conditions ◽  
Electro Optic

PLT(28) thin films deposited on glass substrates were studied by two sputtering processes. One is an in situ magnetron sputtering and the other is a low-temperature magnetron sputtering. The sintered PLT ceramic powders are used as a sputtering target for both processes. The influences of sputtering and annealing conditions on structure and crystallinity of the films were investigated. The electro-optic (E-O) properties of PLT(28) thin films prepared by the two processes were determined by a technique according to Faraday effect. The researches showed the E-O properties were strongly affected by the sputtering process. The film with larger grains exhibits stronger E-O effect. The quadratic E-O coefficient of PLT(28) thin film varies in the range of 0.1 × 10−16 to 1.0 × 10−16 (m/v)2.

scholarly journals Effect of Pb dopant On A.C mechanism of ZnS thin films

2019 ◽  
Vol 12 (25) ◽  
pp. 80-88
Author(s):  
Salma M. Shaban
Keyword(s):  
Thin Films ◽  
Room Temperature ◽  
Atomic Weight ◽  
Thickness Effect ◽  
Frequency Effect ◽  
Frequency Range ◽  
Glass Substrates ◽  
Evaporation Technique ◽  
Vacuum Evaporation Technique ◽  
Effect Of Doping

Vacuum evaporation technique was used to prepare pure and doped ZnS:Pb thin films at10% atomic weight of Pb element onto glass substrates at room temperature for 200 nm thickness. Effect of doping on a.c electrical properties such as, a.c conductivity, real, and imaginary parts of dielectric constant within frequency range (10 KHz - 10 MHz) are measured. The frequency dependence of a.c conductivity is matched with correlated barrier hoping especially at higher frequency. Effect of doping on behavior of a.c mechanism within temperature range 298-473 K was studied.

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