Crystallization Process of Silicon Thin Films with Carbon Nanotube Electron Beam (C-Beam)

2016 ◽  
Vol 16 (11) ◽  
pp. 11788-11792 ◽  
Author(s):  
Jung Su Kang ◽  
Su Woong Lee ◽  
Shikili Callixte ◽  
Won Jong Kim ◽  
Kyu Chang Park
2017 ◽  
Vol 17 (11) ◽  
pp. 7852-7858
Author(s):  
Ha Rim Lee ◽  
Jung Su Kang ◽  
Min Tea Chung ◽  
Kyu Chang Park

2017 ◽  
Vol 9 (6) ◽  
pp. 962-966
Author(s):  
Su Woong Lee ◽  
Jung Su Kang ◽  
Ha Rim Lee ◽  
Kyu Chang Park

1994 ◽  
Vol 343 ◽  
Author(s):  
Hideo Miura ◽  
Asao Nishimura

ABSTRACTInternal stress change of phosphorus-doped silicon thin films during crystallization is measured by detecting substrate curvature change using a scanning laser microscope. The films are deposited in an amorphous phase by chemical vapor deposition using Si2H6 gas. The deposited films have compressive stress of about 200 MPa. The internal stress changes significantly to a tensile stress of about 800 MPa at about 600 °C due to shrinkage of the films during crystallization. The high tensile stress can be relaxed by annealing above 800 °C. The phosphorus doping changes the crystallization process of the films and their final residual stress.


Author(s):  
Seon Yong Park ◽  
Su Woong Lee ◽  
Jung Soo Kang ◽  
Ha Rim Lee ◽  
Mi Yeon Joo ◽  
...  

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