High-Mobility 6,13-Bis(triisopropylsilylethynyl) Pentacene Transistors Using Solution-Processed Polysilsesquioxane Gate Dielectric Layers

2016 ◽  
Vol 16 (4) ◽  
pp. 3273-3276 ◽  
Author(s):  
Yu Matsuda ◽  
Yoshio Nakahara ◽  
Daisuke Michiura ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Low Cost ◽  
High Mobility ◽  
Hole Mobility ◽  
Plastic Substrates ◽  
Active Layers ◽  
Dielectric Layers ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) is a low-temperature curable polymer that is compatible with low-cost plastic substrates. We cured PSQ gate dielectric layers by irradiation with ultraviolet light at ~60 °C, and used them for 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) thin film transistors (TFTs). The fabricated TFTs have shown the maximum and average hole mobility of 1.3 and 0.78±0.3 cm2V−1s−1, which are comparable to those of the previously reported transistors using singlecrystalline TIPS-pentacene micro-ribbons for their active layers and thermally oxidized SiO2 for their gate dielectric layers. It is therefore demonstrated that PSQ is a promising polymer gate dielectric material for low-cost organic TFTs.

Investigation of Ultraviolet Light Curable Polysilsesquioxane Gate Dielectric Layers for Pentacene Thin Film Transistors

2016 ◽  
Vol 16 (4) ◽  
pp. 3327-3331 ◽  
Author(s):  
Hideto Shibao ◽  
Yoshio Nakahara ◽  
Kazuyuki Uno ◽  
Ichiro Tanaka
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Carrier Mobility ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Uv Light ◽  
Limiting Factor ◽  
Dielectric Layers ◽  
Linker Molecules ◽  
Gate Dielectric Material

Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-light cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.

Low-Temperature Deposition of Inorganic–Organic HfO2–PMMA Hybrid Gate Dielectric Layers for High-Mobility ZnO Thin-Film Transistors

2019 ◽  
Vol 1 (6) ◽  
pp. 1003-1011 ◽  
Author(s):  
Gouri Syamala Rao Mullapudi ◽  
Gonzalo Alonso Velazquez-Nevarez ◽  
Carlos Avila-Avendano ◽  
Jorge Alejandro Torres-Ochoa ◽  
Manuel Angel Quevedo-López ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Zno Thin Film ◽  
Dielectric Layers ◽  
Low Temperature Deposition ◽  
Temperature Deposition

scholarly journals Temperature Effects on a-IGZO Thin Film Transistors Using HfO2Gate Dielectric Material

2014 ◽  
Vol 2014 ◽  
pp. 1-5 ◽  
Author(s):  
Yu-Hsien Lin ◽  
Jay-Chi Chou
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Hafnium Oxide ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
High Mobility ◽  
Gate Oxide ◽  
Interface Roughness ◽  
Indium Gallium Zinc Oxide ◽  
Dielectric Thin Film

This study investigated the temperature effect on amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) using hafnium oxide (HfO2) gate dielectric material. HfO2is an attractive candidate as a high-κdielectric material for gate oxide because it has great potential to exhibit superior electrical properties with a high drive current. In the process of integrating the gate dielectric and IGZO thin film, postannealing treatment is an essential process for completing the chemical reaction of the IGZO thin film and enhancing the gate oxide quality to adjust the electrical characteristics of the TFTs. However, the hafnium atom diffused the IGZO thin film, causing interface roughness because of the stability of the HfO2dielectric thin film during high-temperature annealing. In this study, the annealing temperature was optimized at 200°C for a HfO2gate dielectric TFT exhibiting high mobility, a highION/IOFFratio, lowIOFFcurrent, and excellent subthreshold swing (SS).

Low-temperature processable inherently photosensitive polyimide gate dielectric for organic thin-film transistors: Synthesis, characterization, and application to transistors

2005 ◽  
Vol 20 (4) ◽  
pp. 931-939 ◽  
Author(s):  
Seungmoon Pyo ◽  
Hyunsam Son ◽  
Mi Hye Yi
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Low Cost ◽  
Polyimide Film ◽  
Organic Thin Film Transistors ◽  
Organic Thin Film ◽  
Aromatic Diamines ◽  
Plastic Substrates

Low-temperature processable inherently photosensitive polyimide was prepared from a dianhydride, 3,3′,4,4′-benzophenone tetracarboxylic dianhydride, and aromatic diamines, 4,4′-diamino-3,3′dimethyl-diphenylmethane, through a polycondensation reaction, followed by a chemical imidization method. The photosensitive polyimide cured at 180 °C is used as a gate dielectric to fabricate flexible organic thin-film transistors with pentacene as an active semiconductor on polyethersulfone substrate. With the inherently photosensitive polyimide, the access to the gate electrode could be created easily without complicated and expensive lithographic techniques. A field effect carrier mobility of 0.007 cm2/V s was obtained for the pentacene organic thin-film transistors (OTFTs) with the photo-patterned polyimide as a gate dielectric. More detailed analysis for the pentacene OTFTs will be given with electrical properties of the thin polyimide film. Low-temperature processability and patternability of the polyimide give us more freedom to choose plastic substrates in OTFTs and facilitate the realization of low-cost organic electronics.

Thermoset polymers consisting of novolac and melamine derivatives as insulators for organic thin-film transistors

2015 ◽  
Vol 3 (15) ◽  
pp. 3623-3628 ◽  
Author(s):  
Jong-Woon Ha ◽  
Jae-Ho Jang ◽  
Yongnam Kim ◽  
Jin-Kyun Lee ◽  
Jeonghun Kwak ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperatures ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Catalytic Amount ◽  
Organic Thin Film Transistors ◽  
Cross Linking ◽  
Organic Thin Film ◽  
Gate Dielectric Material

A potential gate dielectric material that can be cured and processed at low temperatures was designed and synthesized via the cross-linking of bisphenol A novolac (Novolac) and hexamethoxymethylmelamine (HMMM) in the presence of a catalytic amount of p-toluenesulfonic acid.

scholarly journals High-Mobility Inkjet-Printed Indium-Gallium-Zinc-Oxide Thin-Film Transistors Using Sr-Doped Al2O3 Gate Dielectric

Materials ◽  
2019 ◽  
Vol 12 (6) ◽  
pp. 852 ◽  
Author(s):  
Seungbeom Choi ◽  
Kyung-Tae Kim ◽  
Sung Park ◽  
Yong-Hoon Kim
Keyword(s):  
Thin Film ◽  
Zinc Oxide ◽  
Thin Film Transistors ◽  
Gate Dielectric ◽  
High Mobility ◽  
Oxide Thin Film ◽  
Indium Gallium Zinc Oxide ◽  
Linear Type ◽  
Channel Layer ◽  
Indium Gallium

In this paper, we demonstrate high-mobility inkjet-printed indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) using a solution-processed Sr-doped Al2O3 (SAO) gate dielectric. Particularly, to enhance to the electrical properties of inkjet-printed IGZO TFTs, a linear-type printing pattern was adopted for printing the IGZO channel layer. Compared to dot array printing patterns (4 × 4 and 5 × 5 dot arrays), the linear-type pattern resulted in the formation of a relatively thin and uniform IGZO channel layer. Also, to improve the subthreshold characteristics and low-voltage operation of the device, a high-k and thin (~10 nm) SAO film was used as the gate dielectric layer. Compared to the devices with SiO2 gate dielectric, the inkjet-printed IGZO TFTs with SAO gate dielectric exhibited substantially high field-effect mobility (30.7 cm2/Vs). Moreover, the subthreshold slope and total trap density of states were also significantly reduced to 0.14 V/decade and 8.4 × 1011/cm2·eV, respectively.

High mobility poly-Ge thin-film transistors fabricated on flexible plastic substrates at temperatures below 130°C

2004 ◽  
Vol 33 (4) ◽  
pp. 353-357 ◽  
Author(s):  
D. Shahrjerdi ◽  
B. Hekmatshoar ◽  
S. S. Mohajerzadeh ◽  
A. Khakifirooz ◽  
M. Robertson
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
High Mobility ◽  
Plastic Substrates
Sign in / Sign up

Export Citation Format

Share Document